Progress on III-V-Bi Alloys and Light Emitting Devices

doi:10.1109/ICTON.2018.8473745

	Progress on III-V-Bi Alloys and Light Emitting Devices
	Wang, Shumin1,2,3 ; Yue, Li 1,3; Wang, Lijuan 1,3,4; Zhang, Yanchao1,3,5 ; Wang, Chang1,3,5 ; Zhang, Xiaolei1,3,5 ; Chi, Chaodan 1,3,4; Liang, Hao 1,3,4; Wu, Xiaoyan 1; Liu, Juanjuan 1,3,4; Pan, Wenwu 1; Cao, Chunfang 3; Li, Yaoyao 1,3
	2018
会议录名称	2018 20TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON)
ISSN	2161-2064
卷号	2018-July
发表状态	已发表
DOI	10.1109/ICTON.2018.8473745
摘要	In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented.
关键词	dilute bismide AlAsBi AlSbBi laser diode light emitting diode molecular beam epitaxy
会议地点	Bucharest, Romania
会议日期	1-5 July 2018
URL	查看原文
收录类别	EI ; CPCI-S ; CPCI
语种	英语
资助项目	Key Program of Natural Science Foundation of China[61334004]
WOS研究方向	Engineering ; Optics ; Telecommunications
WOS类目	Engineering, Electrical & Electronic ; Optics ; Telecommunications
WOS记录号	WOS:000462559300141
出版者	IEEE
EI入藏号	20184406000277
EI主题词	Bismuth alloys ; Current density ; Diodes ; Fiber optic networks ; Gallium arsenide ; III-V semiconductors ; Light emitting diodes ; Molecular beam epitaxy ; Quantum well lasers ; Semiconductor lasers
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Fiber Optics:741.1.2 ; Lasers, General:744.1 ; Semiconductor Lasers:744.4.1 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3
WOS关键词	BAND-GAP ; GAAS1-XBIX
原始文献类型	Proceedings Paper
来源库	IEEE
引用统计	正在获取...
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/28662
专题	物质科学与技术学院_硕士生信息科学与技术学院_特聘教授组_王庶民组信息科学与技术学院_博士生
通讯作者	Wang, Shumin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 5.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Wang, Shumin,Yue, Li,Wang, Lijuan,et al. Progress on III-V-Bi Alloys and Light Emitting Devices[C]:IEEE,2018.