Growth and properties of AlSbBi thin films by molecular beam epitaxy

doi:10.1016/j.jallcom.2019.05.300

	Growth and properties of AlSbBi thin films by molecular beam epitaxy
	Zhang, Xiaolei1,2,3 ; Zhang, Yanchao2,4 ; Yue, Li 1; Liang, Hao 1,3; Chi, Chaodan 1,3; Wu, Yufeng 3; Ou, Xin 5; Wang, Shumin 1,3,6
	2019-09-15
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS (IF:5.8[JCR-2023],5.3[5-Year])
ISSN	0925-8388
卷号	801 页码:239-242
发表状态	已发表
DOI	10.1016/j.jallcom.2019.05.300
摘要	AlSbBi thin films with a Bi content up to 15% have been successfully grown by molecular beam epitaxy for the first time. The effect of growth temperature, Sb flux and Bi flux on Bi incorporation are systematically studied. The incorporation of small size Al atoms is proven to be beneficial to improve the stability of AlSbBi with no change of Bi content in the growth temperature range of 360-420 degrees C. The AlBi lattice constant is determined to be about 6.37 angstrom by the combination of Rutherford backscattering spectroscopy and high resolution X-ray diffraction. The new AlBi vibration modes located at 286 cm(-1) and 295 cm(-1) are observed and attributed to AlBi TO and LO mode, respectively, in agreement with theoretical simulations. (C) 2019 Elsevier B.V. All rights reserved.
关键词	Molecular beam epitaxy AlSbBi Bi incorporation Raman spectra
收录类别	EI ; SCIE ; SCI
语种	英语
资助项目	National Basic Research Program of China (973 project)[2014CB643902]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000474352000030
出版者	ELSEVIER SCIENCE SA
EI入藏号	20192507062155
EI主题词	Aluminum alloys ; Binary alloys ; Growth temperature ; Molecular beam epitaxy ; Molecular beams ; Rutherford backscattering spectroscopy ; Thin films ; X ray diffraction analysis
EI分类号	Aluminum Alloys:541.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Atomic and Molecular Physics:931.3
WOS关键词	INSBBI ; RAMAN
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/57618
专题	物质科学与技术学院_硕士生信息科学与技术学院
通讯作者	Yue, Li; Wang, Shumin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 4.SuperMat Co Ltd, 1 Wangzhuang Rd, Beijing 100000, Peoples R China 5.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 6.Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
第一作者单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Xiaolei,Zhang, Yanchao,Yue, Li,et al. Growth and properties of AlSbBi thin films by molecular beam epitaxy[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2019,801:239-242.
APA	Zhang, Xiaolei.,Zhang, Yanchao.,Yue, Li.,Liang, Hao.,Chi, Chaodan.,...&Wang, Shumin.(2019).Growth and properties of AlSbBi thin films by molecular beam epitaxy.JOURNAL OF ALLOYS AND COMPOUNDS,801,239-242.
MLA	Zhang, Xiaolei,et al."Growth and properties of AlSbBi thin films by molecular beam epitaxy".JOURNAL OF ALLOYS AND COMPOUNDS 801(2019):239-242.