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合作作者[TOP 5]

  • 邹新波

    合作成果数：17

  • 郭好文

    合作成果数：9

  • 张羽

    合作成果数：6

  • 高涵

    合作成果数：6

  • 陈佰乐

    合作成果数：5

访问统计


  总访问量
 966
  访问来源
    内部： 17
    外部： 949
    国内： 805
    国外： 161

  年访问量
 144
  访问来源
    内部： 0
    外部： 144
    国内： 130
    国外： 14

  月访问量
 0
  访问来源
    内部： 0
    外部： 0
    国内： 0
    国外： 0

访问量

访问量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [1051]
2. Relative intensity noise of a continuous-wave interband cascade la.. [748]
3. Relative intensity noise of 3.4 μm interband cascade laser [527]
4. Linewidth broadening factor of an interband cascade laser operated.. [455]
5. InAs/GaSb量子阱激光器研究现状及表征研究 [451]
6. Emission and Capture Characteristics of Electron Trap (Eemi = 0.8e.. [412]
7. Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMT.. [401]
8. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [392]
9. Comparative Study on Dynamic Characteristics of GaN HEMT at 300K a.. [314]
10. Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FO.. [292]
11. Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With.. [290]
12. Demonstration and modeling of frequency tripler based on GaN Schot.. [278]
13. Nonlinear Capacitance Compensation Method for Integrating a Metal-.. [272]
14. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Diel.. [257]
15. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [244]
16. Investigation of trapping effects in Schottky lightly doped P-GaN .. [229]
17. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [194]
18. Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R.. [189]
19. Relative Intensity Noise of 3.4 mu m Interband Cascade Laser [177]
20. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [72]
21. Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Mu.. [61]
22. 1.48 dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Neutraliz.. [22]

下载量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [478]
2. Relative intensity noise of a continuous-wave interband cascade la.. [13]
3. Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FO.. [12]
4. AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devi.. [10]
5. Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMT.. [5]
6. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [4]
7. Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Mu.. [3]
8. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [2]
9. InAs/GaSb量子阱激光器研究现状及表征研究 [1]
10. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Diel.. [1]
11. Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R.. [1]
12. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [1]