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(本次检索基于用户作品认领结果)
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WOS被引频次降序
Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
浏览
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Microsoft Word(2182Kb)
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浏览/下载:99/1
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提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga
2
O
3
power diode
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 卷号: 187
作者:
Qu, Haolan
;
Huang, Wei
;
Zhang, Yu
;
Sui, Jin
;
Yang, Ge
Adobe PDF(6465Kb)
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浏览/下载:340/4
|
提交时间:2024/11/29
Proton irradiation
Static characteristics
Trap characteristics
Dynamic characteristics
Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric
期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: 24, 期号: 3, 页码: 358-364
作者:
Yu Zhang
;
Renqiang Zhu
;
Haolan Qu
;
Yitian Gu
;
Huaxing Jiang
Adobe PDF(1470Kb)
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收藏
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浏览/下载:318/0
|
提交时间:2024/06/11
Activation energy
Deep level transient spectroscopy
Dielectric materials
Drain current
Electric fields
Gallium nitride
High electron mobility transistors
III-V semiconductors
MOSFET devices
Stability
Threshold voltage
Current collapse
Dynamic reliability assessment
Dynamics characteristic
Dynamics stability
MOS-FET
MOSFETs
Reference devices
Time resolved measurement
Trench MOSFET
Vertical trench MOSFET
545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2024, 卷号: 45, 期号: 6, 页码: 968-971
作者:
Han Gao
;
Yitian Gu
;
Yu Zhang
;
Jialun Li
;
Junmin Zhou
Adobe PDF(2787Kb)
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浏览/下载:278/2
|
提交时间:2024/04/16
Enhancement mode
ion beam etching
MOSHEMT
recessed-gate
normally-off
Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment
期刊论文
MICROELECTRONICS JOURNAL, 2024, 卷号: 148
作者:
Zhu, Yitai
;
Zhang, Yu
;
Qu, Haolan
;
Gao, Han
;
Du, Haitao
Adobe PDF(4805Kb)
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浏览/下载:337/3
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提交时间:2024/06/11
AlGaN/GaN HEMT
O 2 plasma treatment
Current collapse
Threshold voltage shift
Dynamic characteristic
Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy
期刊论文
JOURNAL OF SEMICONDUCTORS, 2024, 卷号: 45, 期号: 3
作者:
Jin Sui
;
Jiaxiang Chen
;
Haolan Qu
;
Yu Zhang
;
Xing Lu
Adobe PDF(4177Kb)
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浏览/下载:311/1
|
提交时间:2024/04/06
GaN
deep level transient spectroscopy
minority carrier trap
time constant
trap concentration
Activation energy
Deep level transient spectroscopy
Electric fields
Hole concentration
III-V semiconductors
Laser beams
Schottky barrier diodes
Semiconductor diodes
Wide band gap semiconductors
Activation energy E
Carrier traps
Deep hole trap
Deep levels transient spectroscopy
Emission process
Minority carrier
Minority carrier trap
Optical-
Time-constants
Trap concentration
Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures
期刊论文
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS, 2024, 卷号: 42, 期号: 2
作者:
Qu, Haolan
;
Huang, Wei
;
Zhang, Yu
;
Sui, Jin
;
Chen, Jiaxiang
Adobe PDF(3333Kb)
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浏览/下载:369/4
|
提交时间:2024/02/23
Carrier concentration
Cryogenics
Gallium compounds
Semiconductor metal boundaries
Temperature distribution
Blocking performance
Cryogenic temperatures
Dynamic performance
Electrical performance
Ideality factors
Lows-temperatures
Off state
Schottky characteristics
Temperature dependence
Temperature rise
GaN Nanowire n-i-n Diode Enabled High-performance UV Machine Vision System
期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2024, 卷号: 23, 页码: 529-534
作者:
Haitao Du
;
Yu Zhang
;
Junmin Zhou
;
Jiaxiang Chen
;
Wenbo Ye
Adobe PDF(1079Kb)
|
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浏览/下载:268/2
|
提交时间:2024/06/24
Convolution
Gallium nitride
III-V semiconductors
Image recognition
Learning systems
Nanowires
Neural networks
Accuracy
Artificial neural network
Convolutional neural network
Gallium nitride nanowires
Machine vision systems
Machine-learning
Machine-vision
Performance
Acceleration of solving drift-diffusion equations enabled by estimation of initial value at nonequilibrium
期刊论文
NETWORKS AND HETEROGENEOUS MEDIA, 2024, 卷号: 19, 期号: 1, 页码: 456-474
作者:
Du, Chunlin
;
Zhang, Yu
;
Qu, Haolan
;
Guo, Haowen
;
Zou, Xinbo
Adobe PDF(5647Kb)
|
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浏览/下载:272/0
|
提交时间:2024/05/14
drift -di ffusion equations
finite element method
nonlinear iteration
nonequilibrium
initial guess
semiconductor device simulation
Emission and Capture Characteristics of Electron Trap (Eemi = 0.8eV) in Si-doped β-Ga2O3 Epilayer
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 卷号: 38, 期号: 1, 页码: 015001
作者:
Qu, Haolan
;
Chen, Jiaxiang
;
Zhang, Yu
;
Sui, Jin
;
Gu, Yitian
Adobe PDF(796Kb)
|
收藏
|
浏览/下载:443/0
|
提交时间:2022/11/08
Activation energy
Deep level transient spectroscopy
Electric fields
Epilayers
Capture
Capture cross sections
Deep levels transient spectroscopy
Emission
Impact of temperatures
Lambda's
Single electron
Trap
Trap concentration
Β-ga2O3
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