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	Two-photon and three-photon excitation in GaN by spectrally broadband and few-cycle laser pulses 期刊论文 OPTICS AND LASER TECHNOLOGY, 2025, 卷号: 191 作者: Adobe PDF(4214Kb) \| 收藏 \| 浏览/下载：23/1 \| 提交时间：2025/06/30 Gallium Nitride (GaN) Second harmonics Third harmonics Multiphoton induced photoluminescence Few-cycle laser pulse Interferometric frequency resolved autocorrelation
	High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 6, 页码: 3023-3028 作者: Yifan Fan; Xiangyang Chen; Zhecheng Dai; Jingyi Wang; Daqi Shen Adobe PDF(6221Kb) \| 收藏 \| 浏览/下载：61/4 \| 提交时间：2025/04/28 Aluminum gallium nitride Avalanche diodes Avalanche photodiodes Gallium alloys Gallium nitride Gallium phosphide Indium phosphide Laser beams Light emitting diodes Optical communication Semiconducting indium phosphide 3 dB bandwidth Aluminum composition Avalanche photodiode High Speed Light detection Lightemitting diode Micro light-emitting diode Multiplication gain Visible light Visible-light communication
	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang 浏览 \| Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：102/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Reconfigurable phase-only acoustic holography with surrogate model based on soft-GAN 期刊论文 APPLIED ACOUSTICS, 2025, 卷号: 233 作者: Lu, Qingyi; Zhong, Chengxi; Su, Hu; Liu, Song Adobe PDF(5103Kb) \| 收藏 \| 浏览/下载：346/2 \| 提交时间：2025/03/14 Acoustic arrays - Acoustic fields - Acoustic transducers - Gallium nitride - Holograms - Sound recording Acoustic field patterns - Acoustic field reconstruction - Deep learning - Industrial scenarios - Model-based OPC - Penetration ability - Phase-only - Phase-only acoustic holography - Reconfigurable - Surrogate modeling
	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040 作者: Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu Adobe PDF(1674Kb) \| 收藏 \| 浏览/下载：88/5 \| 提交时间：2025/02/12 Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
	Silicon-integrated scandium-doped aluminum nitride electro-optic modulator 期刊论文 PHOTONICS RESEARCH, 2025, 卷号: 13, 期号: 2, 页码: 477-487 作者: Xu, Tianqi; Liu, Yushuai; Pu, Yuanmao; Yang, Yongxiang; Zhong, Qize Adobe PDF(1147Kb) \| 收藏 \| 浏览/下载：422/6 \| 提交时间：2024/06/24 Aluminum gallium nitride - Amplitude shift keying - CMOS integrated circuits - Digital filters - Electrooptical devices - Fiber optic sensors - Frequency shift keying - Indium phosphide - Light modulation - Light modulators - Notch filters - Phase shift keying - Photonic integrated circuits - Photonic integration technology - Ring lasers - Scandium compounds - Semiconducting aluminum compounds - Semiconducting indium phosphide - Signal modulation - Silicon nitride Electro-optic modulators - Electro-optics - Fabrication and characterizations - Functional devices - Hexagonal wurtzite structure - Nonlinear properties - Photonic circuits - Piezoelectric property - Seamless integration - Second orders
	Adaptive Virtual Bus Strategy for Electrolytic Capacitorless DAB Microinverters 期刊论文 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2025 作者: Chuhan Peng; Mingde Zhou; Yifan Wu; Minfan Fu; Haoyu Wang Adobe PDF(4093Kb) \| 收藏 \| 浏览/下载：133/5 \| 提交时间：2025/03/11 Active power decoupling (APD), dualactive- bridge (DAB), gallium nitride (GaN), microinverter, virtual bus.
	Trapping mechanism transition of Î³-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13 作者: Zhu, Junyan; Ding, Jihong; Ouyang, Keqing; Zou, Xinbo; Ma, Hongping Adobe PDF(2565Kb) \| 收藏 \| 浏览/下载：294/2 \| 提交时间：2024/10/08 Aluminum gallium nitride Electron traps Gamma rays Gates (transistor) High electron mobility transistors Irradiation Junction gate field effect transistors Threshold voltage 'current AlGaN Gate stacks Mg-doping Total ionizing dose effects Trap density Trap state Trapping mechanisms Voltage swings Voltage-controlled
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: 24, 期号: 3, 页码: 358-364 作者: Yu Zhang; Renqiang Zhu; Haolan Qu; Yitian Gu; Huaxing Jiang Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：322/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET
	Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer 期刊论文 HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175 作者: Wang, Kaichu; Ding, Qingfeng; Zhou, Qi; Cai, Xinhang; Zhang, Jinfeng 收藏 \| 浏览/下载：289/0 \| 提交时间：2024/09/20 Aluminum gallium nitride Beam forming networks Channel estimation Chemical lasers Computer testing Direction of arrival Distributed feedback lasers Dye lasers Frequency estimation Gallium nitride Heterodyne detection Heterodyning Heterojunctions High electron mobility transistors Hydrogen masers Laser accessories Laser theory Liquid lasers Radiometers Temperature sensors Terahertz wave detectors Tetrodes Time difference of arrival AlGaN/GaN high electron mobility transistors Arrayed detector Coherent detection Directionof-arrival (DOA) Estimation of direction of arrival terahertz wave Field of views Heterodyne (coherent) detection Linear-array Tera Hertz Vector detection

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