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	Pressure-induced photocurrent enhancement and metallization in van der Waals compound SiTe2 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 6, 页码: 061103 作者: Li, Zhongyang; Zeng, Xiaohui; Bu, Kejun; Zhu, Zhikai; Wang, Yiming Adobe PDF(2016Kb) \| 收藏 \| 浏览/下载：319/13 \| 提交时间：2024/08/23 Carrier concentration Crystal structure Electronic structure Energy gap Optoelectronic devices Van der Waals forces Crystals structures Dichalcogenides Metallisation Performance Photocurrent enhancement Structure-properties relationships Tunabilities Two-dimensional Van der Waal Van der Waals compound
	Stoichiometry-Tunable Synthesis and Magnetic Property Exploration of Two-Dimensional Chromium Selenides 期刊论文 ACS NANO, 2024, 卷号: 18, 期号: 8, 页码: 6276-6285 作者: Cui, Fangfang; He, Kun; Wu, Shengqiang; Zhang, Hongmei; Lu, Yue Adobe PDF(6807Kb) \| 收藏 \| 浏览/下载：232/2 \| 提交时间：2024/03/22 Chemical vapor deposition Chromium compounds Electronic properties Nanosheets Semiconducting selenium compounds Stoichiometry Chemical vapour deposition Chromium-based Controlled synthesis Dichalcogenides Electronic and magnetic properties Electronics devices Environmental stability Stoichiometry-tunable synthesis Tunables Two-dimensional
	Tunable Topological Transitions Probed by the Quantum Hall Effect in Twisted Double Bilayer Graphene 期刊论文 NANO LETTERS, 2024, 卷号: 25, 期号: 1, 页码: 91-97 作者: Jia, Zehao; Cao, Xiangyu; Zhang, Shihao; Yang, Jinshan; Yan, Jingyi Adobe PDF(3150Kb) \| 收藏 \| 浏览/下载：28/3 \| 提交时间：2025/01/10 Hall effect devices Nanocrystals Bilayer Graphene Displacement field Electronic.structure Moiré system Quantum hall Quantum phase Structure property Topological transitions Tunables Twisted double bilayer graphene
	Timing verification of rapid single flux quantum logic cell 期刊论文 PHYSICA C: SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2023, 卷号: 610 作者: Weng, Bicong; Gao, Xiaoping; Ren, Jie; Li, Xiuting; Niu, Minghui Adobe PDF(5709Kb) \| 收藏 \| 浏览/下载：292/0 \| 提交时间：2023/06/09 Cells Computer circuits Cytology Delay circuits Integrated circuit manufacture Josephson junction devices Oscillators (electronic) Quantum optics Reliability analysis Hold time Hold time test Process corner Set-up time Setup time test Single flux quantum logic Superconducting electronics Timing parameters Timing verification Verification method
	In-plane momentum-dependent spin texture originating from surface symmetry breaking in the two-dimensional van der Waals ferromagnet CrGeTe3 期刊论文 PHYSICAL REVIEW B, 2023, 卷号: 107, 期号: 12 作者: Wang, De-Yang; Jiang, Qi; Liu, Wen-Jing; Qian, Hao-Ji; Zha, He-Ming Adobe PDF(2153Kb) \| 收藏 \| 浏览/下载：433/0 \| 提交时间：2023/04/14 Chromium compounds Electronic structure Ferromagnetic materials Ferromagnetism Germanium compounds Photoelectron spectroscopy Superconducting materials Tellurium compounds Textures Van der Waals forces Electronic.structure Ferromagnets Low Power Momentum-dependent Nano-devices Spin textures Surface symmetry Symmetry breakings Two-dimensional Van der Waal
	Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2022, 卷号: 43, 期号: 11, 页码: 1-1 作者: Liu, Qiang; Zhou, Hongyang; Jia, Xin; Yang, Yumeng; Mu, Zhiqiang Adobe PDF(2468Kb) \| 收藏 \| 浏览/下载：270/0 \| 提交时间：2022/11/04 Hardening Ionizing radiation MOSFET devices Radiation effects Radiation hardening Radiation shielding Silicon on insulator technology Threshold voltage MOS-FET MOSFETs Radiation hardening (electronic) Radiation hardening (electronics) Radiation immunity Silicon on insulator Total Ionizing Dose Total ionizing dose hardening Void embedded silicon on insulator
	Enhancing oxygen evolution reaction activity of Co4N1-x film electrodes through nitrogen deficiency 期刊论文 CATALYSIS TODAY, 2022 作者: Adobe PDF(4345Kb) \| 收藏 \| 浏览/下载：327/2 \| 提交时间：2021/12/17 Electric conductivity Electrocatalysts Electrodes Electronic structure Nitrogen Oxygen Refractory metal compounds Thin films Transition metals Co4N1-x Electrochemical energy conversions Electrochemical energy storage devices Film electrodes Magnetron-sputtering Nitrogen deficiency Oxygen evolution reaction Reaction activity Transition metal nitrides ]+ catalyst
	Study of the Degradation in LDMOS with STI Technology and Improve the Reliability with Several Methods 会议论文 2022 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE, CSTIC 2022, Shanghai, China, June 20, 2022 - June 21, 2022 作者: Xiaoming Zhang; Donghua Liu; Wensheng Qian Adobe PDF(2459Kb) \| 收藏 \| 浏览/下载：264/0 \| 提交时间：2022/09/30 Electronic design automation Integrated circuits MOS devices Degradation model Drain voltage Electronic simulation Gate drain Gate voltages Hot carrier stress Lateral double diffused mos (LDMOS) Mechanism of degradation Technology nodes Voltage stress
	Anisotropic Infrared Response and Orientation-Dependent Strain-Tuning of the Electronic Structure in Nb2SiTe4 期刊论文 ACS NANO, 2022, 卷号: 16, 期号: 5 作者: Wang, Fanjie; Xu, Yonggang; Mu, Lei; Zhang, Jiasheng; Xia, Wei Adobe PDF(1316Kb) \| 收藏 \| 浏览/下载：817/215 \| 提交时间：2022/05/20 Anisotropy Electronic structure Field effect transistors Niobium compounds Optoelectronic devices Silicon compounds Transition metals Anisotropic infrared material DFT Extinction spectroscopy G0W0-BSE Infrared material Infrared response Orientation dependent Strain engineering Strain tuning Tunables
	Large-Area Monolayer MoS2Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices 期刊论文 ACS APPLIED NANO MATERIALS, 2021, 卷号: 4, 期号: 11, 页码: 12127-12136 作者: Yang, Peng; Yang, Haifeng; Wu, Zhengyuan; Liao, Fuyou; Guo, Xiaojiao Adobe PDF(5985Kb) \| 收藏 \| 浏览/下载：674/0 \| 提交时间：2021/12/17 Charge transfer Chemical vapor deposition Degrees of freedom (mechanics) Gallium nitride Growth kinetics III-V semiconductors Landforms Layered semiconductors Light emitting diodes Monolayers Single crystals Substrates Sulfur compounds Thermoelectric equipment Van der Waals forces 2d/3d heterostructure Chemical vapor deposition methods Chemical vapour deposition Epitaxially grown GaN substrate Lightemitting diode Seeding promoter Spin-electronic devices Synthesised Van der Waal

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