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| Tunable Topological Transitions Probed by the Quantum Hall Effect in Twisted Double Bilayer Graphene | |
| 2024 | |
| 发表期刊 | NANO LETTERS (IF:9.6[JCR-2023],10.1[5-Year]) |
| ISSN | 1530-6984 |
| EISSN | 1530-6992 |
| 卷号 | 25期号:1页码:91-97 |
| 发表状态 | 已发表 |
| DOI | 10.1021/acs.nanolett.4c04242 |
| 摘要 | The moiré system provides a tunable platform for investigating exotic quantum phases. Particularly, the displacement field D is crucial for tuning the electronic structures and topological properties of twisted double bilayer graphene (TDBG). Here, we present a series of D-tunable topological transitions by the evolution of quantum Hall phases (QHPs) in the valence bands of TDBG. As D increases, we observe the alternating emergence of two distinct quantum Hall regions originating from full-filling and half-filling, which we attribute to the D-induced Lifshitz transition. Moreover, we delve into the remote valence bands of TDBG and observe a transition in the sequence of Landau levels upon the application of D, shifting from 8N + 4 to 8N. This observation, combined with theoretical calculations, unveils an alteration in the Berry phase. Our findings highlight the TDBG as an exemplary platform for understanding the origin of the topological transitions in the graphene-based moiré systems. © 2024 American Chemical Society. |
| 关键词 | Hall effect devices Nanocrystals Bilayer Graphene Displacement field Electronic.structure Moiré system Quantum hall Quantum phase Structure property Topological transitions Tunables Twisted double bilayer graphene |
| URL | 查看原文 |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[12174257] ; National Natural Science Foundation of China[ |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS记录号 | WOS:001381650700001 |
| 出版者 | American Chemical Society |
| EI入藏号 | 20245217581089 |
| EI主题词 | Quantum Hall effect |
| EI分类号 | 1301.4 ; 1301.4.1 ; 715 Electronic Equipment, General Purpose and Industrial ; 761 Nanotechnology |
| 原始文献类型 | Article in Press |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/467886 |
| 专题 | 物质科学与技术学院 生命科学与技术学院_硕士生 物质科学与技术学院_PI研究组_刘健鹏组 |
| 通讯作者 | Liu, Jianpeng; Xiu, Faxian |
| 作者单位 | 1.State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai; 200433, China; 2.School of Physics and Electronics, Hunan University, Changsha; 410082, China; 3.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 200031, China; 4.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 200031, China; 5.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai; 200050, China; 6.Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai; 200433, China; 7.Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai; 201210, China; 8.Shanghai Research Center for Quantum Sciences, Shanghai; 201315, China |
| 通讯作者单位 | 物质科学与技术学院; 上海科技大学 |
| 推荐引用方式 GB/T 7714 | Jia, Zehao,Cao, Xiangyu,Zhang, Shihao,et al. Tunable Topological Transitions Probed by the Quantum Hall Effect in Twisted Double Bilayer Graphene[J]. NANO LETTERS,2024,25(1):91-97. |
| APA | Jia, Zehao.,Cao, Xiangyu.,Zhang, Shihao.,Yang, Jinshan.,Yan, Jingyi.,...&Xiu, Faxian.(2024).Tunable Topological Transitions Probed by the Quantum Hall Effect in Twisted Double Bilayer Graphene.NANO LETTERS,25(1),91-97. |
| MLA | Jia, Zehao,et al."Tunable Topological Transitions Probed by the Quantum Hall Effect in Twisted Double Bilayer Graphene".NANO LETTERS 25.1(2024):91-97. |
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