Pressure-induced photocurrent enhancement and metallization in van der Waals compound SiTe2

doi:10.1063/5.0223287

	Pressure-induced photocurrent enhancement and metallization in van der Waals compound SiTe2
	Li, Zhongyang1,2 ; Zeng, Xiaohui1 ; Bu, Kejun 2; Zhu, Zhikai 2; Wang, Yiming 2; Yuan, Jian1 ; Hou, Xiaofei1 ; Shu, Haiyun 2; Yan, Shuai 3; Yang, Wenge 2; Kong, Lingping 2; Liu, Gang 2; Guo, Yanfeng1,4
	2024-08-05
发表期刊	APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year])
ISSN	0003-6951
EISSN	1077-3118
卷号	125 期号:6 页码:061103
发表状态	已发表
DOI	10.1063/5.0223287
摘要	Layered van der Waals (vdW) dichalcogenides are distinguished by their unique crystal structures and high structural tunability, rendering them suitable for applications in optics and optoelectronics. Despite significant processes, some fundamental questions remain in two-dimensional (2D) vdW dichalcogenides, such as clarifying detailed structure-property relationship and further improving the optoelectronic performance. Herein, by applying pressure to tune the crystal structure in 2D vdW dichalcogenide SiTe2, we realized a five orders of magnitude boost in photocurrent at 8 GPa. Such an enhancement is attributed to bandgap narrowing and an increased carrier concentration. Furthermore, bandgap closing and metallization were observed at 15.4 GPa, further suggesting the significant change of electronic structure upon compression. This study not only elucidates the intriguing pressure-induced behavior of SiTe2 but also paves the way for harnessing the unique pressure-responsive properties of 2D vdW dichalcogenides in advanced optoelectronic systems. © 2024 Author(s).
关键词	Carrier concentration Crystal structure Electronic structure Energy gap Optoelectronic devices Van der Waals forces Crystals structures Dichalcogenides Metallisation Performance Photocurrent enhancement Structure-properties relationships Tunabilities Two-dimensional Van der Waal Van der Waals compound
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	Double First-Class Initiative Fund of ShanghaiTech University, National Natural Science Foundation of China[U2130116] ; Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments (MFree), China[22dz2260800] ; Shanghai Science and Technology Committee, China[22JC1410300] ; null[SKL2022]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001284964500009
出版者	American Institute of Physics
EI入藏号	20243216849889
EI主题词	Metallizing
EI分类号	539.3 Metal Plating ; 701.1 Electricity: Basic Concepts and Phenomena ; 741.3 Optical Devices and Systems ; 801.4 Physical Chemistry ; 813.1 Coating Techniques ; 931.3 Atomic and Molecular Physics ; 933.1.1 Crystal Lattice
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/411231
专题	物质科学与技术学院物质科学与技术学院_PI研究组_郭艳峰组物质科学与技术学院_博士生
共同第一作者	Zeng, Xiaohui
通讯作者	Kong, Lingping; Guo, Yanfeng
作者单位	1.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China 2.Center for High Pressure Science and Technology Advanced Research, Shanghai; 201203, China 3.Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201204, China 4.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 201210, China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院; 上海科技大学
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Li, Zhongyang,Zeng, Xiaohui,Bu, Kejun,et al. Pressure-induced photocurrent enhancement and metallization in van der Waals compound SiTe2[J]. APPLIED PHYSICS LETTERS,2024,125(6):061103.
APA	Li, Zhongyang.,Zeng, Xiaohui.,Bu, Kejun.,Zhu, Zhikai.,Wang, Yiming.,...&Guo, Yanfeng.(2024).Pressure-induced photocurrent enhancement and metallization in van der Waals compound SiTe2.APPLIED PHYSICS LETTERS,125(6),061103.
MLA	Li, Zhongyang,et al."Pressure-induced photocurrent enhancement and metallization in van der Waals compound SiTe2".APPLIED PHYSICS LETTERS 125.6(2024):061103.