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	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang 浏览 \| Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：98/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Trapping mechanism transition of Î³-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13 作者: Zhu, Junyan; Ding, Jihong; Ouyang, Keqing; Zou, Xinbo; Ma, Hongping Adobe PDF(2565Kb) \| 收藏 \| 浏览/下载：286/2 \| 提交时间：2024/10/08 Aluminum gallium nitride Electron traps Gamma rays Gates (transistor) High electron mobility transistors Irradiation Junction gate field effect transistors Threshold voltage 'current AlGaN Gate stacks Mg-doping Total ionizing dose effects Trap density Trap state Trapping mechanisms Voltage swings Voltage-controlled
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: 24, 期号: 3, 页码: 358-364 作者: Yu Zhang; Renqiang Zhu; Haolan Qu; Yitian Gu; Huaxing Jiang Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：318/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET
	Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment 期刊论文 MICROELECTRONICS JOURNAL, 2024, 卷号: 148 作者: Zhu, Yitai; Zhang, Yu; Qu, Haolan; Gao, Han; Du, Haitao Adobe PDF(4805Kb) \| 收藏 \| 浏览/下载：337/3 \| 提交时间：2024/06/11 AlGaN/GaN HEMT O 2 plasma treatment Current collapse Threshold voltage shift Dynamic characteristic
	Unlocking the concentration polarization for Solid-State lithium metal batteries 期刊论文 CHEMICAL ENGINEERING JOURNAL, 2024, 卷号: 487 作者: Yu, Jiameng; Zhang, Yining; Gao, Tianyi; Zhang, Xinshui; Lv, Yinjie Adobe PDF(5135Kb) \| 收藏 \| 浏览/下载：404/6 \| 提交时间：2024/04/12 Cobalt compounds Garnets Lithium compounds Lithium-ion batteries Manganese compounds Nickel compounds Polarization Polyelectrolytes Solid electrolytes Solid state devices Solid-State Batteries Threshold voltage Ceramic-polymer composites Concentration polarization Ionic transference Ionic transference number Lithium metals Mechanical flexibility Polymer composite electrolytes Solid state batteries Solid-state electrolyte Transference number
	Resistivity modulation of perovskite samarium nickelate with high-valence cations and the underlying mechanism 期刊论文 APPLIED SURFACE SCIENCE, 2023, 卷号: 624 作者: Wang, Xingyuan; Zhang, Xuefeng; Sun, Yibo; Zhang, Hui; Pei, Cuiying Adobe PDF(3691Kb) \| 收藏 \| 浏览/下载：601/4 \| 提交时间：2023/04/14 Aluminum compounds Band structure Density functional theory Electronic structure Electrons Nickel compounds Positive ions Rare earths Samarium Samarium compounds Threshold voltage Electron-doping Electronic phase transition Ion intercalation Nickelates Perovskite nickelate Resistivity modulation Samarium nickelate Structural distortions Valence cations Zn 2+
	Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes 会议论文 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2023), Shanghai, China, 26-27 June 2023 作者: Jin Sui; Jiaxiang Chen; Haolan Qu; Ruohan Zhang; Min Zhu Adobe PDF(753Kb) \| 收藏 \| 浏览/下载：346/1 \| 提交时间：2023/09/23 Radiation effects Schottky diodes Spectroscopy Schottky barriers Neutrons Threshold voltage Leakage currents
	Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 卷号: PP, 期号: 99, 页码: 5590-5595 作者: Yu Zhang; Yitian Gu; Jiaxiang Chen; Yitai Zhu; Baile Chen Adobe PDF(1973Kb) \| 收藏 \| 浏览/下载：213/1 \| 提交时间：2023/10/07 Dynamic ON-resistance ( $\textit{R}_{\biosc{on}}$ ) GaN metal–oxide–semiconductor high-electron mobility transistor (MOSHEMT) threshold voltage ( $\textit{V}_{\text{th}}$ ) instability ZrOTEXPRESERVE13 dielectric
	RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2023, 卷号: 44, 期号: 9, 页码: 1412-1415 作者: Junmin Zhou; Haowen Guo; Haitao Du; Yu Zhang; Haolan Qu Adobe PDF(1317Kb) \| 收藏 \| 浏览/下载：399/2 \| 提交时间：2023/07/28 Gallium nitride III-V semiconductors Leakage currents Low noise amplifiers Noise figure Threshold voltage Enhancement-mode Gain Gate Gate-leakage High electron-mobility transistors Linearity Low noiseamplifier Performances evaluation Radiofrequencies RF low noise amplifier
	Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2022, 卷号: 43, 期号: 11, 页码: 1-1 作者: Liu, Qiang; Zhou, Hongyang; Jia, Xin; Yang, Yumeng; Mu, Zhiqiang Adobe PDF(2468Kb) \| 收藏 \| 浏览/下载：298/0 \| 提交时间：2022/11/04 Hardening Ionizing radiation MOSFET devices Radiation effects Radiation hardening Radiation shielding Silicon on insulator technology Threshold voltage MOS-FET MOSFETs Radiation hardening (electronic) Radiation hardening (electronics) Radiation immunity Silicon on insulator Total Ionizing Dose Total ionizing dose hardening Void embedded silicon on insulator

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