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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
Microsoft Word(2182Kb)
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浏览/下载:102/1
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提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
Hydrogenated metal oxide semiconductors for photoelectrochemical water splitting: Recent advances and future prospects
期刊论文
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2025, 卷号: 163
作者:
Xiaodan Wang
;
Beibei Wang
;
Leonhard Mayrhofer
;
Xiangjian Meng
;
Hao Shen
Adobe PDF(24257Kb)
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浏览/下载:331/9
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提交时间:2024/12/16
Hydrogenated metal oxide semiconductors
Photoelectrochemical water splitting
Hydrogenation techniques
Surface and interface engineering strategies
Advanced and in-situ characterization tech-
niques
Density functional theory
Ion Irradiation-Induced Coordinatively Unsaturated Zn Sites for Enhanced CO Hydrogenation
期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2025, 卷号: 147, 期号: 7, 页码: 5703-5713
作者:
Shao, Wei-Peng
;
Ling, Yunjian
;
Peng, Hongru
;
Luo, Jie
;
Cao, Yunjun
Adobe PDF(6620Kb)
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浏览/下载:168/12
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提交时间:2025/02/17
Cobalt
Defect density
Defect engineering
Phosphorus compounds
Recrystallization (metallurgy)
Selenium compounds
Thermal Engineering
Active site
Catalyse
CO hydrogenation
Co-ordinatively unsaturated
Defect engineering
Ions irradiation
Metal sites
Metal-oxide
Unsaturated metals
ZnO
Hydrogen spillover enhances the selective hydrogenation of α,
β
-unsaturated aldehydes on the Cu-O-Ce interface
期刊论文
CHINESE JOURNAL OF STRUCTURAL CHEMISTRY, 2025, 卷号: 44, 期号: 1
作者:
Cui, Jinyuan
;
Yang, Tingting
;
Xu, Teng
;
Lin, Jin
;
Liu, Kunlong
Adobe PDF(1404Kb)
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浏览/下载:83/3
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提交时间:2025/02/12
Metal-oxide interface
Hydrogen spillover
Spillover hydrogenation
Selective hydrogenation
Single-atom alloy
Direct In- and Out-of-Plane Writing of Metals on Insulators by Electron-Beam-Enabled, Confined Electrodeposition with Submicrometer Feature Size
期刊论文
SMALL METHODS, 2024, 卷号: 8, 期号: 7
作者:
Nydegger, Mirco
;
Wang, Zhu-Jun
;
Willinger, Marc Georg
;
Spolenak, Ralph
;
Reiser, Alain
Adobe PDF(2397Kb)
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浏览/下载:224/1
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提交时间:2024/01/19
3D printing
Additives
Alumina
Aluminum oxide
Electrodeposition
Electrodes
Electrolytes
Electron beams
Electrons
Metal substrates
Microanalysis
Microfabrication
Nanotechnology
Scanning electron microscopy
3D nanofabrication
Electrolyte reservoirs
Electron-beam
Feature sizes
Localised
Microfabrication process
Microscale
Nano scale
Out-of-plane
Submicrometers
Vacancy Ordering in Ultrathin Copper Oxide Films on Cu(111)
期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2024, 卷号: 146, 期号: 23, 页码: 15887-15896
作者:
Zhu, Bowen
;
Huang, Wugen
;
Lin, Haiping
;
Feng, Hao
;
Palotas, Krisztian
Adobe PDF(9883Kb)
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浏览/下载:302/11
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提交时间:2024/06/17
Copper oxides
Monte Carlo methods
Oxide films
Ultrathin films
Bulk counterpart
Copper oxide films
Copper surface
Metal surfaces
Oxide surface
Oxide thin films
Structural determination
Surface oxide
Ultra-thin
Vacancy ordering
Demonstration of acousto-optical modulation based on a thin-film AlScN photonic platform
期刊论文
PHOTONICS RESEARCH, 2024, 卷号: 12, 期号: 6, 页码: 1138-1149
作者:
Bian, Kewei
;
Li, Zhenyu
;
Liu, Yushuai
;
Xu, Sumei
;
Zhao, Xingyan
Adobe PDF(2215Kb)
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浏览/下载:370/4
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提交时间:2024/06/21
Acoustic waves
Aluminum nitride
CMOS integrated circuits
Light modulation
MOS devices
Optical signal processing
Oxide semiconductors
Scandium
Scandium compounds
Thick films
Thin film circuits
Acousto-optic modulations
Acousto-optic modulator
Complementary metal-oxide-semiconductor technologies
Fabrication process
Microwave signal processing
Modulation technologies
On chips
Optical signal-processing
Piezoelectric property
Thin-films
Ultra-compact and high-performance suspended aluminum scandium nitride Lamb wave humidity sensor with a graphene oxide layer
期刊论文
NANOSCALE, 2024, 卷号: 16, 期号: 21
作者:
Luo, Zhifang
;
Li, Dongxiao
;
Le, Xianhao
;
He, Tianyiyi
;
Shao, Shuai
Adobe PDF(2961Kb)
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浏览/下载:356/4
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提交时间:2024/05/11
Acoustic surface wave devices
Acoustic waves
Aluminum nitride
Electromechanical devices
Graphene
III-V semiconductors
MEMS
MOS devices
Nitrides
Oxide semiconductors
'current
Aluminium-scandium
Complementary metal oxide semiconductor process
Graphene oxides
Low sensitivity
Microelectromechanical-systems technologies
Oxide layer
Performance
Sensing areas
Sensor limits
Control of metal-support interaction for tunable CO hydrogenation performance over Ru/TiO2 nanocatalysts
期刊论文
NANOSCALE, 2024, 卷号: 16, 期号: 12, 页码: 6151-6162
作者:
Lin, Heyun
;
Zhang, Wenzhe
;
Shen, Huachen
;
Yu, Hailing
;
An, Yunlei
Adobe PDF(2654Kb)
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浏览/下载:326/1
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提交时间:2024/03/22
Catalyst activity
Catalyst selectivity
Hydrogenation
Nanocatalysts
Olefins
Oxide minerals
Catalytic behavior
CO conversion
CO hydrogenation
Crystal phasis
Metal-support interactions
Nano-catalyst
Performance
Strong metal-support interaction
Treatment conditions
Tunable CO
Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors
期刊论文
JOURNAL OF APPLIED PHYSICS, 2024, 卷号: 135, 期号: 8
作者:
Chen, Jiaxiang
;
Qu, Haolan
;
Sui, Jin
;
Lu, Xing
;
Zou, Xinbo
Adobe PDF(3256Kb)
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浏览/下载:444/63
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提交时间:2024/03/22
Atomic layer deposition
Capacitance
Electric fields
Gallium compounds
MOS capacitors
Oxide semiconductors
Transistors
Zirconia
Atomic layer deposited
Bulk traps
Comprehensive analysis
Device instabilities
Emission behavior
Forward bias
Interfaces state
Metal-oxide semiconductor devices
Metal-oxide- semiconductorcapacitors
Relaxation kinetics
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