中文版 | English

在结果中检索

KMS

浏览/检索结果: 共6条，第1-6条 帮助

已选(0)清除 条数/页：   排序方式：
Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping 期刊论文
JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25
作者:  Wang, Qian;  Hua, Hao;  Zheng, Li;  Feng, Junhong;  Zhang, Cheng
Adobe PDF(2608Kb)  |  收藏  |  浏览/下载：1632/2  |  提交时间：2024/04/12
Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: PP, 期号: 99, 页码: 1-1
作者:  Yu Zhang;  Renqiang Zhu;  Haolan Qu;  Yitian Gu;  Huaxing Jiang
Adobe PDF(1470Kb)  |  收藏  |  浏览/下载：291/0  |  提交时间：2024/06/11
Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET 期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 卷号: 11, 页码: 319-324
作者:  Yijun Qian;  Qiang Liu;  Jialun Yao;  Xiaowei Wang;  Amit Kumar Shukla
Adobe PDF(4964Kb)  |  收藏  |  浏览/下载：446/2  |  提交时间：2023/06/30
Stacked-bridge-based three-level DAB converter in 800V dc micro-grids 会议论文
CONFERENCE PROCEEDINGS - IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION - APEC, Orlando, FL, United states, March 19, 2023 - March 23, 2023
作者:  Haoyu Zhang;  Liang Wang;  Haoyu Wang
Adobe PDF(3783Kb)  |  收藏  |  浏览/下载：270/0  |  提交时间：2023/07/07
Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2022, 卷号: 43, 期号: 11, 页码: 1-1
作者:  Liu, Qiang;  Zhou, Hongyang;  Jia, Xin;  Yang, Yumeng;  Mu, Zhiqiang
Adobe PDF(2468Kb)  |  收藏  |  浏览/下载：271/0  |  提交时间：2022/11/04
Simplified model for radiation effects in MOS devices 会议论文
2016 ARGENTINE CONFERENCE OF MICRO-NANOELECTRONICS, TECHNOLOGY AND APPLICATIONS (CAMTA), Neuquen, Argentina, 4-5 Aug. 2016
作者:  L. Sambuco Salomone;  A. Faigón
Adobe PDF(1100Kb)  |  收藏  |  浏览/下载：20/0  |  提交时间：2024/03/29
  • 首页
  • 上一页
  • 1
  • 下一页
  • 末页