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1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040
作者:
Wenbo Ye
;
Junmin Zhou
;
Han Gao
;
Haowen Guo
;
Yitian Gu
Adobe PDF(1674Kb)
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浏览/下载:79/4
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提交时间:2025/02/12
Distributed feedback lasers
Gates (transistor)
High electron mobility transistors
Junction gate field effect transistors
Leakage currents
Monolithic microwave integrated circuits
Noise figure
Enhancement-mode
Gallium nitride
High electron-mobility transistors
Low noiseamplifier
Low-noise amplifier
Metala sem-iconductor high-electron-mobility transistor (MOSHEMT)
MOSHEMT
MOSHEMTs
Neutral beam etching
Study on dark current suppression of HgCdTe avalanche photodiodes for low flux photon detection
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 124, 期号: 22
作者:
Xie, Hao
;
Guo, Huijun
;
Shen, Chuan
;
Yang, Liao
;
Chen, Lu
Adobe PDF(2172Kb)
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浏览/下载:431/67
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提交时间:2024/06/17
Atomic layer deposition
Avalanche photodiodes
Cadmium alloys
Dark currents
Dry etching
Electric fields
Infrared radiation
Mercury amalgams
Photons
Semiconductor alloys
Signal to noise ratio
Wet etching
Dark current densities
Device gains
Excess noise
Integrated circuit noise
Low flux
Mid-wavelength infrared
Noise equivalent photons
Performance
Photon detection
Readout integrated circuits
Design and fabrication of HgCdTe linear avalanche devices with low gain normalized dark current density
会议论文
PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, Sydney, NSW, Australia, June 1, 2023 - June 3, 2023
作者:
Xie, Hao
;
Guo, Huijun
;
Shen, Chuan
;
Yang, Liao
;
Chen, Lu
Adobe PDF(2182Kb)
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收藏
|
浏览/下载:277/0
|
提交时间:2024/01/19
Avalanche photodiodes
Cadmium alloys
Dark currents
Electric fields
Etching
Fabrication
II-VI semiconductors
Infrared radiation
Mercury amalgams
Photons
Semiconductor alloys
Avalanche devices
Dark current densities
Device gains
Excess noise
Integrated circuit noise
Low flux
Mesa devices
Mid-wavelength infrared
Performance
Readout integrated circuits
RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2023, 卷号: 44, 期号: 9, 页码: 1412-1415
作者:
Junmin Zhou
;
Haowen Guo
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
Adobe PDF(1317Kb)
|
收藏
|
浏览/下载:393/1
|
提交时间:2023/07/28
Gallium nitride
III-V semiconductors
Leakage currents
Low noise amplifiers
Noise figure
Threshold voltage
Enhancement-mode
Gain
Gate
Gate-leakage
High electron-mobility transistors
Linearity
Low noiseamplifier
Performances evaluation
Radiofrequencies
RF low noise amplifier
Developments and Characterization of HgCdTe e-APDs at SITP
会议论文
PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, Nantong, China, September 17, 2022 - September 19, 2022
作者:
Guo, Huijun
;
Yang, Liao
;
Shen, Chuan
;
Xie, Hao
;
Yang, Dan
Adobe PDF(1434Kb)
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收藏
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浏览/下载:308/0
|
提交时间:2023/06/02
Cadmium alloys
Dark currents
Economic and social effects
Focusing
II-VI semiconductors
Infrared radiation
Mercury amalgams
Narrow band gap semiconductors
Optical communication
Photons
Semiconductor alloys
Semiconductor doping
Cutoff wavelengths
Excess noise factor
Focal-plane arrays
Hgcdte APD
High gain
Low dark current
NEPh
PIN structures
Reverse-bias
Short wavelengths
Coexistence of Strong and Weak Topological Orders in a Quasi-One-Dimensional Material
期刊论文
PHYSICAL REVIEW LETTERS, 2022, 卷号: 129, 期号: 14
作者:
Wang, De -Yang
;
Jiang, Qi
;
Kuroda, Kenta
;
Kawaguchi, Kaishu
;
Harasawa, Ayumi
Adobe PDF(1863Kb)
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浏览/下载:503/0
|
提交时间:2022/11/04
Photoelectron spectroscopy
Quantum computers
Topology
Application prospect
Broad application
Low dimensionality
Quantum computing devices
Quasi-one-dimensional materials
Spin currents
Spintronics device
Topological materials
Topological order
Topological state
Improve the On-Resistance for 80V NLDMOS with STI Technology in 0.18 UM BCD Process
会议论文
2022 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE, CSTIC 2022, Shanghai, China, June 20, 2022 - June 21, 2022
作者:
Xiaoming Zhang
;
Donghua Liu
;
Haiyang Ling
;
Wensheng Qian
Adobe PDF(3354Kb)
|
收藏
|
浏览/下载:226/0
|
提交时间:2022/09/30
BCD process
Condition
High frequency HF
High-voltages
Low currents
On-resistance
Power applications
Save energy
SIMPLE method
Specific-on-resistance
Heat distribution of IPT receiver with low-voltage and high-current output
会议论文
CONFERENCE PROCEEDINGS - IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION - APEC, Virtual, Online, United states, June 14, 2021 - June 17, 2021
作者:
Peng Zhao
;
Yifan Jiang
;
Guangce Zheng
;
Kang Yue
;
Yu Liu
Adobe PDF(4047Kb)
|
收藏
|
浏览/下载:498/1
|
提交时间:2021/12/03
Inductive power transmission
Compensation network
Current output
Heat distribution
High currents
Inductive powertransfer (IPT)
Low voltages
Low
high
Low
voltage and high
current output
Thermal
Thermal issue
Voltage current
thermal issue
low-voltage and high-current output
compensation network
inductive power transfer
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