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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
Microsoft Word(2182Kb)
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浏览/下载：80/1
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提交时间：2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99
作者:
Wenbo Ye
;
Junmin Zhou
;
Han Gao
;
Haowen Guo
;
Yitian Gu
Adobe PDF(1674Kb)
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浏览/下载：76/4
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提交时间：2025/02/12
Distributed feedback lasers
Gates (transistor)
High electron mobility transistors
Junction gate field effect transistors
Leakage currents
Monolithic microwave integrated circuits
Noise figure
Enhancement-mode
Gallium nitride
High electron-mobility transistors
Low noiseamplifier
Low-noise amplifier
Metala sem-iconductor high-electron-mobility transistor (MOSHEMT)
MOSHEMT
MOSHEMTs
Neutral beam etching
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:
Zhu, Junyan
;
Ding, Jihong
;
Ouyang, Keqing
;
Zou, Xinbo
;
Ma, Hongping
Adobe PDF(2565Kb)
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浏览/下载：264/1
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提交时间：2024/10/08
Aluminum gallium nitride
Electron traps
Gamma rays
Gates (transistor)
High electron mobility transistors
Irradiation
Junction gate field effect transistors
Threshold voltage
'current
AlGaN
Gate stacks
Mg-doping
Total ionizing dose effects
Trap density
Trap state
Trapping mechanisms
Voltage swings
Voltage-controlled
Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping
期刊论文
JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2024, 卷号: 57, 期号: 25
作者:
Wang, Qian
;
Hua, Hao
;
Zheng, Li
;
Feng, Junhong
;
Zhang, Cheng
Adobe PDF(2608Kb)
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浏览/下载：1700/2
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提交时间：2024/04/12
Hafnium compounds
Junction gate field effect transistors
MOSFET devices
Silicon
4h-SiC
4H-SiC MOSFET
BFOM
Conventional MOSFETs
High frequency HF
High-frequency figure of merit
Ions implantation
Measured results
MOS structure
RG-MOS
Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy
会议论文
2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024
作者:
Ke Li
;
Yi Ma
;
Xinbo Zou
JPEG(176Kb)
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浏览/下载：158/0
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提交时间：2024/09/19
High electron mobility transistors
III-V semiconductors
Junction gate field effect transistors
Masers
Power amplifiers
Power HEMT
System-on-chip
AM-AM distortion
AM-PM
Compensation strategy
Gain compression
GaN power amplifier
Output power
Power
Power amplifier
Soft gain compression
Transistor architecture
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