| Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET 会议论文
2021 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS, ICTA 2021, Zhuhai, China, November 24, 2021 - November 26, 2021
作者: Qian, Yijun ; Gao, Yuan; Shukla, Amit Kumar; Wu, Tao; Wei, Xing
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