验证码:

换一张

忘记密码？记住我

取消登录

统一认证登录

取消

中文版 | English

上海科技大学知识管理系统

ShanghaiTech University Knowledge Management System

统一认证登录登录注册

图片搜索

粘贴图片网址

首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
知识整合
学习讨论厅

在结果中检索

研究单元&专题

物质科学与技术学院 [14]

信息科学与技术学院 [13]

作者

文献类型

期刊论文 [23]

会议论文 [2]

发表日期

出处

APPLIED PH... [2]

JOURNAL OF... [2]

2020 CONFE... [1]

2024 IEEE ... [1]

ACS CATALY... [1]

ADVANCED M... [1]

语种

资助项目

National N... [2]

Environmen... [1]

Foundation... [1]

Guangdong ... [1]

Hangzhou K... [1]

Jiangxi Pr... [1]

资助机构

收录类别

EI [25]

状态

知识图谱

KMS

浏览/检索结果: 共25条，第1-10条

帮助

已选(0)清除条数/页：排序方式：
	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：87/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode 期刊论文 OPTICS EXPRESS, 2025, 卷号: 33, 期号: 5, 页码: 10591-10598 作者: Ge, Huachen; Liang, Yan; Wang, Wenyang; Wang, Zihao; Zhu, Liqi Adobe PDF(3532Kb) \| 收藏 \| 浏览/下载：50/2 \| 提交时间：2025/03/28 III-V semiconductors Indium phosphide 'current +GaAsSb Dark current densities Dark current noise Digital alloys InP Lattice-matched Low noise performance Lower noise Photodiode structures
	Pressure-regulated bandgap narrowing and photoelectric activity enhancement in layered halide compound GeI2 期刊论文 JOURNAL OF APPLIED PHYSICS, 2025, 卷号: 137, 期号: 8, 页码: 085902 作者: Li, Zhongyang; Wang, Yiming; Zeng, Xiaohui; Zhou, Shuo; Zhu, Zhikai Adobe PDF(3663Kb) \| 收藏 \| 浏览/下载：325/6 \| 提交时间：2025/03/14 Carrier concentration - Gallium compounds - Germanium alloys - Germanium oxides - Heterojunctions - Luminescent devices - Photodetectors - Photoelectricity - Semiconducting indium phosphide - Van der Waals forces - Wide band gap semiconductors Activity enhancement - Band gap narrowing - Halide compounds - Heterojunction devices - Light-matter interactions - Photoelectrics - Spectral response - Van Der Waals interactions - Weak interlayers - Wide-band-gap
	*Growth Pathway of CdS Nanoplatelets Investigated by In Situ* X-ray Scattering and Optical Spectroscopy 期刊论文 JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2025, 卷号: 16, 期号: 6, 页码: 1507-1514 作者: Qian, Kun; Xu, Haohui; Zhao, Zhuo; Xu, Xiaozhi; Wang, Jiaqi** Adobe PDF(8084Kb) \| 收藏 \| 浏览/下载：101/7 \| 提交时间：2025/02/17 Cadmium chloride Cadmium sulfide CdS nanoparticles High resolution transmission electron microscopy Indium phosphide Selenium compounds Absorption peaks CdS Formation mechanism Nanoplatelet Optical spectroscopy Optical- Precursor compounds Property Two-dimensional X-ray scattering spectroscopy
	Silicon-integrated scandium-doped aluminum nitride electro-optic modulator 期刊论文 PHOTONICS RESEARCH, 2025, 卷号: 13, 期号: 2, 页码: 477-487 作者: Xu, Tianqi; Liu, Yushuai; Pu, Yuanmao; Yang, Yongxiang; Zhong, Qize Adobe PDF(1147Kb) \| 收藏 \| 浏览/下载：399/6 \| 提交时间：2024/06/24 Aluminum gallium nitride - Amplitude shift keying - CMOS integrated circuits - Digital filters - Electrooptical devices - Fiber optic sensors - Frequency shift keying - Indium phosphide - Light modulation - Light modulators - Notch filters - Phase shift keying - Photonic integrated circuits - Photonic integration technology - Ring lasers - Scandium compounds - Semiconducting aluminum compounds - Semiconducting indium phosphide - Signal modulation - Silicon nitride Electro-optic modulators - Electro-optics - Fabrication and characterizations - Functional devices - Hexagonal wurtzite structure - Nonlinear properties - Photonic circuits - Piezoelectric property - Seamless integration - Second orders
	Predictions of high-temperature superconducting ternary hydrides under high pressure using density functional calculations 期刊论文 PHYSICAL REVIEW B, 2025, 卷号: 111, 期号: 5 作者: Zhu, Bangshuai; Shao, Dexi; Pei, Cuiying; Wang, Qi; Wu, Juefei Adobe PDF(3323Kb) \| 收藏 \| 浏览/下载：66/1 \| 提交时间：2025/03/14 Barium compounds - Bond strength (chemical) - Cadmium alloys - Cadmium compounds - Chlorine compounds - Germanium compounds - High pressure effects in solids - Hydrogen bonds - Indium phosphide - Technetium compounds Chemical compositions - Density-functional calculations - Element substitution - High pressure - High temperature superconducting - High-temperature superconductor - Low pressures - Metal elements - Prototype structures - Ternary hydrides
	Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures 期刊论文 APPLIED PHYSICS LETTERS, 2025, 卷号: 126, 期号: 1 作者: Zhi, Zhenghang; Wu, Yuyang; Ruan, Hanzhi; Liu, Jiuming; Huang, Puyang Adobe PDF(2896Kb) \| 收藏 \| 浏览/下载：129/12 \| 提交时间：2025/02/12 Cadmium alloys Cadmium telluride Gallium phosphide Heterodyning Heterojunctions Indium phosphide Narrow band gap semiconductors Selenium compounds Semiconducting aluminum compounds Semiconducting antimony compounds Semiconducting cadmium compounds Semiconducting gallium compounds Semiconducting indium phosphide Semiconductor quantum wells Silicon compounds Spin orbit coupling Spintronics Band bendings CdTe Molecular-beam epitaxy Quantum confinement effects Quantum-well heterostructure Rashba spin-orbit coupling Rashba-type spin-orbit Spin-orbit couplings Tunables Two-dimensional
	Rational Synthesis of Isomeric Graphdiyne Frameworks toward Single-Ruthenium Catalysts and High-Performance Nitrogen Reduction 期刊论文 ADVANCED MATERIALS, 2025 作者: Feng, Boxu; Zhang, Dong; Han, Zhiya; Shi, Pengfei; Yan, Pu Adobe PDF(4275Kb) \| 收藏 \| 浏览/下载：21/1 \| 提交时间：2025/04/25 Energy gap Indium phosphide Naphthalene Ruthenium compounds Thorium compounds Azulenes Covalent organic frameworks Graphdiyne Graphdiyne-like framework Isomeric framework Narrow bandgap Performance Rational synthesis Ruthenium catalysts Thsi2 topology
	Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers 期刊论文 JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2025, 卷号: PP, 期号: 99 作者: Yang Li; Jiawei Li; Tao Wu Adobe PDF(5299Kb) \| 收藏 \| 浏览/下载：74/2 \| 提交时间：2025/03/03 Acoustic delay lines - Guided electromagnetic wave propagation - Indium phosphide - Linear actuators - Nitrides - Piezoelectric transducers - Scandium - Scandium compounds - Ultrasonic transducers - Ultrasonic waves Electrode layout - Element method - Phase relationships - Propagation loss - Reflected waves - Scandium doped aluminum nitride - Single-phase unidirectional transducers - Symmetrics - Theoretical modeling - Unit cells
	High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99 作者: Yifan Fan; Xiangyang Chen; Zhecheng Dai; Jingyi Wang; Daqi Shen Adobe PDF(6221Kb) \| 收藏 \| 浏览/下载：39/1 \| 提交时间：2025/04/28 Aluminum gallium nitride Avalanche diodes Avalanche photodiodes Gallium alloys Gallium nitride Gallium phosphide Indium phosphide Laser beams Light emitting diodes Optical communication Semiconducting indium phosphide 3 dB bandwidth Aluminum composition Avalanche photodiode High Speed Light detection Lightemitting diode Micro light-emitting diode Multiplication gain Visible light Visible-light communication

首页
上一页
1
2
3
下一页
末页

首页
研究单元产出分布图
收录类型分布图
论文引用排行
作者
文献类型
学科分类
使用帮助
联系我们

条目量27064
全文量25905
访问量16263819
下载量1087018

Copyright © 上海科技大学版权所有沪ICP备13001436号-1 沪公网安备 31011502006855号

地址邮编: 上海市浦东新区华夏中路393号
电话: 86-21-20685191