消息
×
loading..
×
验证码:
换一张
忘记密码?
记住我
×
统一认证登录
登录
中文版
|
English
上海科技大学知识管理系统
ShanghaiTech University Knowledge Management System
统一认证登录
登录
注册
ALL
ORCID
题名
作者
发表日期
关键词
文献类型
DOI
出处
存缴日期
收录类别
出版者
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
知识整合
学习讨论厅
在结果中检索
研究单元&专题
物质科学与技术学院 [47]
信息科学与技术学院 [31]
更多...
作者
陈佰乐 [11]
王文扬 [5]
李圣刚 [4]
邓卓 [4]
陆卫 [4]
李萌 [4]
更多...
文献类型
期刊论文 [69]
会议论文 [7]
发表日期
2025 [14]
2024 [15]
2023 [14]
2022 [13]
2021 [10]
2020 [5]
更多...
出处
红外与毫米波学报 [4]
HONGWAI YU... [3]
JOURNAL OF... [3]
PROCEEDING... [3]
ADVANCED O... [2]
APPLIED PH... [2]
更多...
语种
英语 [68]
中文 [6]
资助项目
National N... [6]
CAS Projec... [1]
Centre for... [1]
China Post... [1]
Environmen... [1]
Foundation... [1]
更多...
资助机构
收录类别
EI [73]
SCI [50]
SCIE [23]
北大核心 [7]
CPCI [2]
CPCI-S [2]
更多...
状态
已发表 [72]
正式接收 [1]
×
知识图谱
KMS
反馈留言
浏览/检索结果:
共76条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
期刊影响因子升序
期刊影响因子降序
题名升序
题名降序
提交时间升序
提交时间降序
WOS被引频次升序
WOS被引频次降序
发表日期升序
发表日期降序
High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 6, 页码: 3023-3028
作者:
Yifan Fan
;
Xiangyang Chen
;
Zhecheng Dai
;
Jingyi Wang
;
Daqi Shen
Adobe PDF(6221Kb)
|
收藏
|
浏览/下载:61/4
|
提交时间:2025/04/28
Aluminum gallium nitride
Avalanche diodes
Avalanche photodiodes
Gallium alloys
Gallium nitride
Gallium phosphide
Indium phosphide
Laser beams
Light emitting diodes
Optical communication
Semiconducting indium phosphide
3 dB bandwidth
Aluminum composition
Avalanche photodiode
High Speed
Light detection
Lightemitting diode
Micro light-emitting diode
Multiplication gain
Visible light
Visible-light communication
A ferroelectric semiconductor floating-gate transistor based on van der Waals heterostructures
期刊论文
NANO RESEARCH, 2025, 卷号: 18, 期号: 6
作者:
Liu, Xuanye
;
Gao, Hui
;
Song, Peng
;
Wei, Chijun
;
Jiazila, Nuertai
Adobe PDF(13012Kb)
|
收藏
|
浏览/下载:17/5
|
提交时间:2025/07/14
Degrees of freedom (mechanics)
Explosives
Ferroelectric devices
Ferroelectric materials
Ferroelectricity
Gates (transistor)
III-V semiconductors
Memory architecture
Nonvolatile storage
Polarization
Semiconducting indium compounds
Semiconductor storage
Storage (materials)
Ferroelectric semiconductors
Floating gate memory
Floating gate transistors
Multi-level storage
Multilevels
Non-volatile memory
Reconfigurability
Van der Waal
Van der waal heterostructure
Α-in2se3
Photocarrier distribution in an InGaAs/InP avalanche photodiodes and its contribution to device performances
期刊论文
NANOSCALE, 2025
作者:
Cheng, Yue
;
Xin, Rui
;
Yu, Li
;
Mao, Feiyu
;
Li, Xiang
Adobe PDF(1688Kb)
|
收藏
|
浏览/下载:20/1
|
提交时间:2025/05/20
Photoemission
Semiconducting indium
Core region
Cross-sectional scanning
Device performance
InGaAs/InP avalanche photodiodes
Near-infrared wavelength
Optimal performance
Photo-carriers
Photoelectric property
Single-photon detectors
Wavelength ranges
Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface
期刊论文
AMERICAN INSTITUTE OF PHYSICS ADVANCES, 2025, 卷号: 15, 期号: 5
作者:
Xiaoxiao Ma
;
Zhenghang Zhi
;
Weijie Deng
;
TianXin Li
;
Qianchun Weng
浏览
|
Microsoft Word(1068Kb)
|
收藏
|
浏览/下载:76/0
|
提交时间:2025/04/16
Electron scattering
Electron transport properties
III-V semiconductors
Indium arsenide
Semiconducting cadmium telluride
Semiconducting indium phosphide
CdTe
Effective mass
Energy-band bending
Heterojunction interfaces
Heterostructure interfaces
High electron mobility
Nonreciprocal
Rashba spin-orbit coupling
Spin-orbit coupling effects
Spintronics device
Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
浏览
|
Microsoft Word(2182Kb)
|
收藏
|
浏览/下载:102/1
|
提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers
期刊论文
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2025, 卷号: 34, 期号: 2, 页码: 194-203
作者:
Yang Li
;
Jiawei Li
;
Tao Wu
Adobe PDF(5299Kb)
|
收藏
|
浏览/下载:89/2
|
提交时间:2025/03/03
Acoustic delay lines - Guided electromagnetic wave propagation - Indium phosphide - Linear actuators - Nitrides - Piezoelectric transducers - Scandium - Scandium compounds - Ultrasonic transducers - Ultrasonic waves
Electrode layout - Element method - Phase relationships - Propagation loss - Reflected waves - Scandium doped aluminum nitride - Single-phase unidirectional transducers - Symmetrics - Theoretical modeling - Unit cells
Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode
期刊论文
OPTICS EXPRESS, 2025, 卷号: 33, 期号: 5, 页码: 10591-10598
作者:
Ge, Huachen
;
Liang, Yan
;
Wang, Wenyang
;
Wang, Zihao
;
Zhu, Liqi
Adobe PDF(3532Kb)
|
收藏
|
浏览/下载:68/2
|
提交时间:2025/03/28
III-V semiconductors
Indium phosphide
'current
+GaAsSb
Dark current densities
Dark current noise
Digital alloys
InP
Lattice-matched
Low noise performance
Lower noise
Photodiode structures
Pressure-regulated bandgap narrowing and photoelectric activity enhancement in layered halide compound GeI2
期刊论文
JOURNAL OF APPLIED PHYSICS, 2025, 卷号: 137, 期号: 8
作者:
Li, Zhongyang
;
Wang, Yiming
;
Zeng, Xiaohui
;
Zhou, Shuo
;
Zhu, Zhikai
Adobe PDF(3663Kb)
|
收藏
|
浏览/下载:399/6
|
提交时间:2025/03/14
Carrier concentration - Gallium compounds - Germanium alloys - Germanium oxides - Heterojunctions - Luminescent devices - Photodetectors - Photoelectricity - Semiconducting indium phosphide - Van der Waals forces - Wide band gap semiconductors
Activity enhancement - Band gap narrowing - Halide compounds - Heterojunction devices - Light-matter interactions - Photoelectrics - Spectral response - Van Der Waals interactions - Weak interlayers - Wide-band-gap
Predictions of high-temperature superconducting ternary hydrides under high pressure using density functional calculations
期刊论文
PHYSICAL REVIEW B, 2025, 卷号: 111, 期号: 5
作者:
Zhu, Bangshuai
;
Shao, Dexi
;
Pei, Cuiying
;
Wang, Qi
;
Wu, Juefei
Adobe PDF(3323Kb)
|
收藏
|
浏览/下载:77/1
|
提交时间:2025/03/14
Barium compounds - Bond strength (chemical) - Cadmium alloys - Cadmium compounds - Chlorine compounds - Germanium compounds - High pressure effects in solids - Hydrogen bonds - Indium phosphide - Technetium compounds
Chemical compositions - Density-functional calculations - Element substitution - High pressure - High temperature superconducting - High-temperature superconductor - Low pressures - Metal elements - Prototype structures - Ternary hydrides
Growth Pathway of CdS Nanoplatelets Investigated by
In Situ
X-ray Scattering and Optical Spectroscopy
期刊论文
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2025, 卷号: 16, 期号: 6, 页码: 1507-1514
作者:
Qian, Kun
;
Xu, Haohui
;
Zhao, Zhuo
;
Xu, Xiaozhi
;
Wang, Jiaqi
Adobe PDF(8084Kb)
|
收藏
|
浏览/下载:117/9
|
提交时间:2025/02/17
Cadmium chloride
Cadmium sulfide
CdS nanoparticles
High resolution transmission electron microscopy
Indium phosphide
Selenium compounds
Absorption peaks
CdS
Formation mechanism
Nanoplatelet
Optical spectroscopy
Optical-
Precursor compounds
Property
Two-dimensional
X-ray scattering spectroscopy
首页
上一页
1
2
3
4
5
6
7
8
下一页
末页