KMS

浏览/检索结果: 共15条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:  Yitai zhu;  Haitao Du;  Yu Zhang;  Haolan Qu;  Haodong Jiang
浏览  |  Microsoft Word(2182Kb)  |  收藏  |  浏览/下载:99/1  |  提交时间:2025/03/07
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(1674Kb)  |  收藏  |  浏览/下载:85/5  |  提交时间:2025/02/12
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:  Zhu, Junyan;  Ding, Jihong;  Ouyang, Keqing;  Zou, Xinbo;  Ma, Hongping
Adobe PDF(2565Kb)  |  收藏  |  浏览/下载:286/2  |  提交时间:2024/10/08
Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: 24, 期号: 3, 页码: 358-364
作者:  Yu Zhang;  Renqiang Zhu;  Haolan Qu;  Yitian Gu;  Huaxing Jiang
Adobe PDF(1470Kb)  |  收藏  |  浏览/下载:318/0  |  提交时间:2024/06/11
Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer 期刊论文
HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175
作者:  Wang, Kaichu;  Ding, Qingfeng;  Zhou, Qi;  Cai, Xinhang;  Zhang, Jinfeng
收藏  |  浏览/下载:268/0  |  提交时间:2024/09/20
Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy 会议论文
2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024
作者:  Ke Li;  Yi Ma;  Xinbo Zou
JPEG(176Kb)  |  收藏  |  浏览/下载:164/0  |  提交时间:2024/09/19
Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review 期刊论文
MICROMACHINES, 2023, 卷号: 14, 期号: 11
作者:  Zou, Xiazhi;  Jiayi Yang;  Qifeng Qiao;  Xinbo Zou;  Chen JX(陈嘉祥)
Adobe PDF(3884Kb)  |  收藏  |  浏览/下载:479/2  |  提交时间:2023/11/20
Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET 期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 卷号: 11, 页码: 319-324
作者:  Yijun Qian;  Qiang Liu;  Jialun Yao;  Xiaowei Wang;  Amit Kumar Shukla
Adobe PDF(4964Kb)  |  收藏  |  浏览/下载:479/2  |  提交时间:2023/06/30
0.2-4.0 THz broadband terahertz detector based on antenna-coupled AlGaN/GaN HEMTs arrayed in a bow-tie pattern 期刊论文
OPTICS EXPRESS, 2023, 卷号: 31, 期号: 6, 页码: 10720-10731
作者:  Zhu, Yifan;  Ding, Qingfeng;  Xiang, Lanyong;  Zhang, Jinfeng;  Li, Xinxing
Adobe PDF(6444Kb)  |  收藏  |  浏览/下载:373/0  |  提交时间:2023/04/07
A room-temperature, low-impedance and high-IF-bandwidth terahertz heterodyne detector based on bowtie-antenna-coupled AlGaN/GaN HEMT 期刊论文
APPLIED PHYSICS EXPRESS, 2023, 卷号: 16, 期号: 2
作者:  Ding, Qingfeng;  Zhu, Yifan;  Xiang, Lanyong;  Zhang, Jinfeng;  Li, Xinxing
Adobe PDF(1042Kb)  |  收藏  |  浏览/下载:368/0  |  提交时间:2023/03/10
  • 首页
  • 上一页
  • 1
  • 2
  • 下一页
  • 末页