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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:  Yitai zhu;  Haitao Du;  Yu Zhang;  Haolan Qu;  Haodong Jiang
Microsoft Word(2182Kb)  |  收藏  |  浏览/下载:88/1  |  提交时间:2025/03/07
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(1674Kb)  |  收藏  |  浏览/下载:78/4  |  提交时间:2025/02/12
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:  Zhu, Junyan;  Ding, Jihong;  Ouyang, Keqing;  Zou, Xinbo;  Ma, Hongping
Adobe PDF(2565Kb)  |  收藏  |  浏览/下载:270/1  |  提交时间:2024/10/08
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 卷号: 69, 期号: 11
作者:  Qian, Yijun;  Gao, Yuan;  Shukla, Amit Kumar;  Sun, Lu;  Zou, Xinbo
Adobe PDF(3370Kb)  |  收藏  |  浏览/下载:534/1  |  提交时间:2022/10/08
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