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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
Microsoft Word(2182Kb)
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浏览/下载:67/1
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提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99
作者:
Wenbo Ye
;
Junmin Zhou
;
Han Gao
;
Haowen Guo
;
Yitian Gu
Adobe PDF(1674Kb)
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浏览/下载:72/4
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提交时间:2025/02/12
Distributed feedback lasers
Gates (transistor)
High electron mobility transistors
Junction gate field effect transistors
Leakage currents
Monolithic microwave integrated circuits
Noise figure
Enhancement-mode
Gallium nitride
High electron-mobility transistors
Low noiseamplifier
Low-noise amplifier
Metala sem-iconductor high-electron-mobility transistor (MOSHEMT)
MOSHEMT
MOSHEMTs
Neutral beam etching
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:
Zhu, Junyan
;
Ding, Jihong
Adobe PDF(2565Kb)
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浏览/下载:253/1
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提交时间:2024/10/08
Aluminum gallium nitride
Electron traps
Gamma rays
Gates (transistor)
High electron mobility transistors
Irradiation
Junction gate field effect transistors
Threshold voltage
'current
AlGaN
Gate stacks
Mg-doping
Total ionizing dose effects
Trap density
Trap state
Trapping mechanisms
Voltage swings
Voltage-controlled
Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
期刊论文
MICROMACHINES, 2023, 卷号: 14, 期号: 11
作者:
Zou, Xiazhi
;
Jiayi Yang
;
Qifeng Qiao
;
Xinbo Zou
;
Chen JX(陈嘉祥)
Adobe PDF(3884Kb)
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浏览/下载:448/2
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提交时间:2023/11/20
High electron mobility transistors
III-V semiconductors
Characterization methods
Characterization techniques
Critical review
Gallium nitride high-electron-mobility transistor
High breakdown voltage
High current densities
High electron-mobility transistors
High-power-density
Power devices
Trap
A room-temperature, low-impedance and high-IF-bandwidth terahertz heterodyne detector based on bowtie-antenna-coupled AlGaN/GaN HEMT
期刊论文
APPLIED PHYSICS EXPRESS, 2023, 卷号: 16, 期号: 2
作者:
Ding, Qingfeng
;
Zhu, Yifan
Adobe PDF(1042Kb)
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浏览/下载:350/0
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提交时间:2023/03/10
Aluminum gallium nitride
Antenna arrays
Bandwidth
Electric impedance
Gallium nitride
Heterodyning
High electron mobility transistors
III-V semiconductors
Lens antennas
Low noise amplifiers
Room temperature
AlGaN/GaN high electron mobility transistors
Antenna-coupled
Bow-tie antennas
Field-effect transistor
Heterodyne
Heterodyne detectors
Intermediate frequency bandwidth
Low impedance
Low-high
Tera Hertz
Research on the characteristics of AlGaN/GaN HEMT terahertz detector array cooled by liquid nitrogen
期刊论文
HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2022, 卷号: 51, 期号: 12
作者:
Wu, Hao
;
Zhu, Yifan
;
Ding, Qingfeng
;
Zhang, Jinfeng
;
Yang, Shangguan
Adobe PDF(1356Kb)
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浏览/下载:289/0
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提交时间:2023/03/10
Aluminum gallium nitride
Electron mobility
Focusing
Gallium nitride
III-V semiconductors
Liquefied gases
Pixels
Temperature
AlGaN/GaN high electron mobility transistors
Detector arrays
Focal Plane
Gallium nitride high-electron-mobility transistor
High electron-mobility transistors
Imaging chips
Low-temperature focal-plane
Lows-temperatures
Terahertz detectors
Working voltage
Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection
期刊论文
ELECTRONICS, 2022, 卷号: 11, 期号: 13, 页码: 1958
作者:
Song, Wenhan
;
Guo, Haowen
;
Gu, Yitian
;
Zhou, Junmin
;
Sui, Jin
Adobe PDF(1835Kb)
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浏览/下载:1058/485
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提交时间:2022/08/15
gallium nitride (GaN)
high electron mobility transistor (HEMT)
microwave receiver protector (RP)
power compression
phase shift
Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic Temperatures
期刊论文
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 卷号: 31, 期号: 11, 页码: 1219-1222
作者:
Haowen Guo
;
Junmin Zhou
;
Maojun Wang
;
Xinbo Zou
Adobe PDF(2774Kb)
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浏览/下载:371/2
|
提交时间:2021/05/26
Amplitude compression
cryogenic temperature
gallium nitride (GaN)
high electron-mobility transistor (HEMT)
phase compression
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