Research on the characteristics of AlGaN/GaN HEMT terahertz detector array cooled by liquid nitrogen

doi:10.3788/IRLA20220225

	Research on the characteristics of AlGaN/GaN HEMT terahertz detector array cooled by liquid nitrogen
	Wu, Hao1,2,3 ; Zhu, Yifan 1,3,4; Ding, Qingfeng1,2,3 ; Zhang, Jinfeng 1,3; Yang, Shangguan 1,3; Sun, Jiandong 1,3; Qin, Hua1,2,3
	2022-12
发表期刊	HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING
ISSN	1007-2276
卷号	51 期号:12
发表状态	已发表
DOI	10.3788/IRLA20220225
摘要	In order to take full advantage of the high electron mobility of the AlGaN/GaN high-electron-mobility transistor (HEMT) terahertz detector array, the detection characteristics of the HEMT terahertz detector array at 77 K are studied. A low temperature system suitable for the focal-plane array (FPA) chip is built based on liquid nitrogen Dewar. Comparison tests of the FPA at room temperature and low temperature is realized. When the temperature is lowered from 300 K to 77 K, the average responsivity of the detector array pixels increase by about 3 times, the average noise increases slightly, and the average noise-equivalent power (NEP) is reduced from 45.1 pW/Hz1/2 to 19.4 pW/Hz1/2 at 340 GHz, i.e., the sensitivity is more than doubled. Compared with the single detector coupled with silicon lens, there is still a lot of room for improving the sensitivity of array pixels. It is mainly due to the inconsistency of the optimal working voltage of each pixel, that leads to a large dispersion of the responsivity and noise between pixels under a given unified working voltage. Possible solutions to the problem of inconsistent optimal working voltage are discussed in this paper. © 2022 Chinese Society of Astronautics. All rights reserved.
关键词	Aluminum gallium nitride Electron mobility Focusing Gallium nitride III-V semiconductors Liquefied gases Pixels Temperature AlGaN/GaN high electron mobility transistors Detector arrays Focal Plane Gallium nitride high-electron-mobility transistor High electron-mobility transistors Imaging chips Low-temperature focal-plane Lows-temperatures Terahertz detectors Working voltage
收录类别	EI ; 北大核心
语种	中文
出版者	Chinese Society of Astronautics
EI入藏号	20230213368833
EI主题词	High electron mobility transistors
EI分类号	641.1 Thermodynamics ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 804.2 Inorganic Compounds
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/281948
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_秦华组物质科学与技术学院_硕士生物质科学与技术学院_博士生
作者单位	1.Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China; 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 3.Key Laboratory of Nanodevices of Jiangsu Province, Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou; 215123, China; 4.School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei; 230026, China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Wu, Hao,Zhu, Yifan,Ding, Qingfeng,et al. Research on the characteristics of AlGaN/GaN HEMT terahertz detector array cooled by liquid nitrogen[J]. HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING,2022,51(12).
APA	Wu, Hao.,Zhu, Yifan.,Ding, Qingfeng.,Zhang, Jinfeng.,Yang, Shangguan.,...&Qin, Hua.(2022).Research on the characteristics of AlGaN/GaN HEMT terahertz detector array cooled by liquid nitrogen.HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING,51(12).
MLA	Wu, Hao,et al."Research on the characteristics of AlGaN/GaN HEMT terahertz detector array cooled by liquid nitrogen".HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING 51.12(2022).