验证码:

换一张

忘记密码？记住我

取消登录

统一认证登录

取消

中文版 | English

上海科技大学知识管理系统

ShanghaiTech University Knowledge Management System

统一认证登录登录注册

图片搜索

粘贴图片网址

首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
知识整合
学习讨论厅

在结果中检索

研究单元&专题

信息科学与技术学院 [22]

物质科学与技术学院 [18]

作者

文献类型

期刊论文 [33]

会议论文 [5]

发表日期

出处

HONGWAI YU... [3]

IEEE TRANS... [2]

OPTICS EXP... [2]

17TH IEEE ... [1]

2019 IEEE/... [1]

2020 IEEE ... [1]

语种

资助项目

National N... [3]

Natural Sc... [3]

ShanghaiTe... [3]

CAS Strate... [1]

CAS Strate... [1]

Chinese Ac... [1]

资助机构

收录类别

EI [36]

北大核心 [6]

知识图谱

KMS

浏览/检索结果: 共38条，第1-10条

帮助

已选(0)清除条数/页：排序方式：
	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：67/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Reconfigurable phase-only acoustic holography with surrogate model based on soft-GAN 期刊论文 APPLIED ACOUSTICS, 2025, 卷号: 233 作者: Lu, Qingyi; Zhong, Chengxi; Su, Hu; Liu, Song Adobe PDF(5103Kb) \| 收藏 \| 浏览/下载：174/1 \| 提交时间：2025/03/14 Acoustic arrays - Acoustic fields - Acoustic transducers - Gallium nitride - Holograms - Sound recording Acoustic field patterns - Acoustic field reconstruction - Deep learning - Industrial scenarios - Model-based OPC - Penetration ability - Phase-only - Phase-only acoustic holography - Reconfigurable - Surrogate modeling
	Silicon-integrated scandium-doped aluminum nitride electro-optic modulator 期刊论文 PHOTONICS RESEARCH, 2025, 卷号: 13, 期号: 2, 页码: 477-487 作者: Xu, Tianqi; Liu, Yushuai; Pu, Yuanmao; Yang, Yongxiang; Zhong, Qize Adobe PDF(1147Kb) \| 收藏 \| 浏览/下载：382/5 \| 提交时间：2024/06/24 Aluminum gallium nitride - Amplitude shift keying - CMOS integrated circuits - Digital filters - Electrooptical devices - Fiber optic sensors - Frequency shift keying - Indium phosphide - Light modulation - Light modulators - Notch filters - Phase shift keying - Photonic integrated circuits - Photonic integration technology - Ring lasers - Scandium compounds - Semiconducting aluminum compounds - Semiconducting indium phosphide - Signal modulation - Silicon nitride Electro-optic modulators - Electro-optics - Fabrication and characterizations - Functional devices - Hexagonal wurtzite structure - Nonlinear properties - Photonic circuits - Piezoelectric property - Seamless integration - Second orders
	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99 作者: Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu Adobe PDF(1674Kb) \| 收藏 \| 浏览/下载：72/4 \| 提交时间：2025/02/12 Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
	Adaptive Virtual Bus Strategy for Electrolytic Capacitorless DAB Microinverters 期刊论文 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2025 作者: Chuhan Peng; Mingde Zhou; Yifan Wu; Minfan Fu; Haoyu Wang Adobe PDF(4093Kb) \| 收藏 \| 浏览/下载：76/5 \| 提交时间：2025/03/11 Active power decoupling (APD), dualactive- bridge (DAB), gallium nitride (GaN), microinverter, virtual bus.
	Trapping mechanism transition of Î³-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13 作者: Zhu, Junyan; Ding, Jihong; Ouyang, Keqing; Zou, Xinbo; Ma, Hongping Adobe PDF(2565Kb) \| 收藏 \| 浏览/下载：254/1 \| 提交时间：2024/10/08 Aluminum gallium nitride Electron traps Gamma rays Gates (transistor) High electron mobility transistors Irradiation Junction gate field effect transistors Threshold voltage 'current AlGaN Gate stacks Mg-doping Total ionizing dose effects Trap density Trap state Trapping mechanisms Voltage swings Voltage-controlled
	Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer 期刊论文 HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175 作者: Wang, Kaichu; Ding, Qingfeng; Zhou, Qi; Cai, Xinhang; Zhang, Jinfeng 收藏 \| 浏览/下载：246/0 \| 提交时间：2024/09/20 Aluminum gallium nitride Beam forming networks Channel estimation Chemical lasers Computer testing Direction of arrival Distributed feedback lasers Dye lasers Frequency estimation Gallium nitride Heterodyne detection Heterodyning Heterojunctions High electron mobility transistors Hydrogen masers Laser accessories Laser theory Liquid lasers Radiometers Temperature sensors Terahertz wave detectors Tetrodes Time difference of arrival AlGaN/GaN high electron mobility transistors Arrayed detector Coherent detection Directionof-arrival (DOA) Estimation of direction of arrival terahertz wave Field of views Heterodyne (coherent) detection Linear-array Tera Hertz Vector detection
	Synthesis of Narrow Band Gap Gallium Zinc Nitride Oxide Solid Solutions for Photocatalytic Water Splitting under Visible Light 期刊论文 CHEMISTRY OF MATERIALS, 2024, 卷号: 36, 期号: 6, 页码: 2917-2924 作者: Iwasa, Natsutogi; Teng, Zhenyuan; Ma, Guijun; Hisatomi, Takashi; Domen, Kazunari Adobe PDF(2475Kb) \| 收藏 \| 浏览/下载：299/1 \| 提交时间：2024/04/12 Aluminum nitride Crystallinity Energy gap Gallium nitride Hydrogen production II-VI semiconductors III-V semiconductors Irradiation Nitrogen Photocatalytic activity Solid solutions Wide band gap semiconductors Evacuated tubes Free solids Long wavelength Narrow bandgap Nitrogen sources Photoresponses Solid nitrogen Visible light Visible-light irradiation Water splitting
	Controllable step-flow growth of GaN on patterned freestanding substrate 期刊论文 JOURNAL OF SEMICONDUCTORS, 2024, 卷号: 45, 期号: 2 作者: Peng Wu,; Jianping Liu; Lei Hu; Xiaoyu Ren,; Aiqin Tian Adobe PDF(6040Kb) \| 收藏 \| 浏览/下载：337/0 \| 提交时间：2024/03/08 Ammonia Gallium nitride Substrates Atomic step GaN substrate Growth mechanisms Growth modes Growth of GaN Motion models Step motions Step-flow growth Terrace width
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: PP, 期号: 99, 页码: 1-1 作者: Yu Zhang; Renqiang Zhu; Haolan Qu; Yitian Gu; Huaxing Jiang Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：291/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET

首页
上一页
1
2
3
4
下一页
末页

首页
研究单元产出分布图
收录类型分布图
论文引用排行
作者
文献类型
学科分类
使用帮助
联系我们

条目量26710
全文量25570
访问量15815804
下载量1052064

Copyright © 上海科技大学版权所有沪ICP备13001436号-1 沪公网安备 31011502006855号

地址邮编: 上海市浦东新区华夏中路393号
电话: 86-21-20685191