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	Two-photon and three-photon excitation in GaN by spectrally broadband and few-cycle laser pulses 期刊论文 OPTICS AND LASER TECHNOLOGY, 2025, 卷号: 191 作者: Wang, Meng-Yi; Xiao, Jie-Xiang; Wang, Miao; Yi, Jue-Min; Song, Ye Adobe PDF(4214Kb) \| 收藏 \| 浏览/下载：10/1 \| 提交时间：2025/06/30 Gallium Nitride (GaN) Second harmonics Third harmonics Multiphoton induced photoluminescence Few-cycle laser pulse Interferometric frequency resolved autocorrelation
	High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 6, 页码: 3023-3028 作者: Yifan Fan; Xiangyang Chen; Zhecheng Dai; Jingyi Wang; Daqi Shen Adobe PDF(6221Kb) \| 收藏 \| 浏览/下载：55/3 \| 提交时间：2025/04/28 Aluminum gallium nitride Avalanche diodes Avalanche photodiodes Gallium alloys Gallium nitride Gallium phosphide Indium phosphide Laser beams Light emitting diodes Optical communication Semiconducting indium phosphide 3 dB bandwidth Aluminum composition Avalanche photodiode High Speed Light detection Lightemitting diode Micro light-emitting diode Multiplication gain Visible light Visible-light communication
	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang 浏览 \| Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：100/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Reconfigurable phase-only acoustic holography with surrogate model based on soft-GAN 期刊论文 APPLIED ACOUSTICS, 2025, 卷号: 233 作者: Lu, Qingyi; Zhong, Chengxi; Su, Hu; Liu, Song Adobe PDF(5103Kb) \| 收藏 \| 浏览/下载：326/1 \| 提交时间：2025/03/14 Acoustic arrays - Acoustic fields - Acoustic transducers - Gallium nitride - Holograms - Sound recording Acoustic field patterns - Acoustic field reconstruction - Deep learning - Industrial scenarios - Model-based OPC - Penetration ability - Phase-only - Phase-only acoustic holography - Reconfigurable - Surrogate modeling
	Electrical activities of sulfur dopants in GaAs introduced by self-assembled molecular monolayers 期刊论文 JOURNAL OF APPLIED PHYSICS, 2025, 卷号: 137, 期号: 12 作者: Fan, Zhengfang; Liu, Yumeng; Wang, Yizhuo; Wei, Hao; Li, He Adobe PDF(2044Kb) \| 收藏 \| 浏览/下载：45/2 \| 提交时间：2025/04/14 Electric rectifiers Gallium arsenide Molecular docking Molecules Secondary ion mass spectrometry Self assembled monolayers Semiconducting gallium arsenide Semiconductor doping Silicon wafers Surface discharges Doping techniques Electrical activities GaAs Hall measurements Junction diode Lows-temperatures Molecular monolayer Non destructive Research focus Secondary ion-mass spectrometry
	In situ Detection of the Molecule-Crowded Aqueous Electrode-Electrolyte Interface 期刊论文 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2025, 卷号: 147, 期号: 13, 页码: 10943-10953 作者: Wei, Shiqiang; Shou, Hongwei; Qi, Zheng-Hang; Chen, Shuangming; Han, Yong Adobe PDF(12124Kb) \| 收藏 \| 浏览/下载：75/3 \| 提交时间：2025/03/31 Anode materials Gallium compounds Synchrotron radiation Ultrahigh vacuum Ambient pressures Aqueous environment Electrochemicals Electrode-electrolyte interfaces Energy In-situ detections Interface chemistry Metal anodes X-ray photoelectrons Zn deposition
	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040 作者: Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu Adobe PDF(1674Kb) \| 收藏 \| 浏览/下载：86/5 \| 提交时间：2025/02/12 Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
	Preparation of the LiGa Intermetallic Alloy by Electrochemical or Thermal Method for Ammonia Synthesis 期刊论文 JOURNAL OF SUSTAINABLE METALLURGY, 2025, 卷号: 11, 期号: 1, 页码: 29-45 作者: Wang, Xingran; Liu, Jian; Xi, Bingxu; Meng, Xian; Zhou, Jiayin Adobe PDF(6855Kb) \| 收藏 \| 浏览/下载：274/1 \| 提交时间：2024/12/04 Lithium Gallium Liquid metal Electrochemical extraction Nitrogen fertilizer
	Pressure-regulated bandgap narrowing and photoelectric activity enhancement in layered halide compound GeI2 期刊论文 JOURNAL OF APPLIED PHYSICS, 2025, 卷号: 137, 期号: 8 作者: Li, Zhongyang; Wang, Yiming; Zeng, Xiaohui; Zhou, Shuo; Zhu, Zhikai Adobe PDF(3663Kb) \| 收藏 \| 浏览/下载：380/6 \| 提交时间：2025/03/14 Carrier concentration - Gallium compounds - Germanium alloys - Germanium oxides - Heterojunctions - Luminescent devices - Photodetectors - Photoelectricity - Semiconducting indium phosphide - Van der Waals forces - Wide band gap semiconductors Activity enhancement - Band gap narrowing - Halide compounds - Heterojunction devices - Light-matter interactions - Photoelectrics - Spectral response - Van Der Waals interactions - Weak interlayers - Wide-band-gap
	Silicon-integrated scandium-doped aluminum nitride electro-optic modulator 期刊论文 PHOTONICS RESEARCH, 2025, 卷号: 13, 期号: 2, 页码: 477-487 作者: Xu, Tianqi; Liu, Yushuai; Pu, Yuanmao; Yang, Yongxiang; Zhong, Qize Adobe PDF(1147Kb) \| 收藏 \| 浏览/下载：418/6 \| 提交时间：2024/06/24 Aluminum gallium nitride - Amplitude shift keying - CMOS integrated circuits - Digital filters - Electrooptical devices - Fiber optic sensors - Frequency shift keying - Indium phosphide - Light modulation - Light modulators - Notch filters - Phase shift keying - Photonic integrated circuits - Photonic integration technology - Ring lasers - Scandium compounds - Semiconducting aluminum compounds - Semiconducting indium phosphide - Signal modulation - Silicon nitride Electro-optic modulators - Electro-optics - Fabrication and characterizations - Functional devices - Hexagonal wurtzite structure - Nonlinear properties - Photonic circuits - Piezoelectric property - Seamless integration - Second orders

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