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	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：67/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Unintentional Fe incorporation in the homo-epitaxy of GaN on Fe-doped freestanding GaN substrate 期刊论文 APPLIED PHYSICS EXPRESS, 2025, 卷号: 18, 期号: 3 作者: Adobe PDF(985Kb) \| 收藏 \| 浏览/下载：78/7 \| 提交时间：2025/03/12 GaN homo-epitaxy unintentional Fe
	Ta-based Au-free and low annealing temperature ohmic contacts on GaN and AlGaN/GaN heterostructures 期刊论文 MATERIALS LETTERS, 2025, 卷号: 391 作者: Xia Songyuan(夏嵩渊) Adobe PDF(869Kb) \| 收藏 \| 浏览/下载：45/3 \| 提交时间：2025/03/28 GaN Ohmic contact Ta Low temperature
	Adaptive Virtual Bus Strategy for Electrolytic Capacitorless DAB Microinverters 期刊论文 IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2025 作者: Chuhan Peng; Mingde Zhou; Yifan Wu; Minfan Fu Adobe PDF(4093Kb) \| 收藏 \| 浏览/下载：76/5 \| 提交时间：2025/03/11 Active power decoupling (APD), dualactive- bridge (DAB), gallium nitride (GaN), microinverter, virtual bus.
	3D Point-Based Multi-Modal Context Clusters GAN for Low-Dose PET Image Denoising 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS FOR VIDEO TECHNOLOGY, 2024, 卷号: 34, 期号: 10 作者: Cui, Jiaqi; Wang, Yan; Zhou, Luping; Fei, Yuchen; Zhou, Jiliu Adobe PDF(1871Kb) \| 收藏 \| 浏览/下载：280/5 \| 提交时间：2024/05/14 Magnetic resonance imaging Positron emission tomography Noise reduction Three-dimensional displays Point cloud compression Image denoising Task analysis Positron emission topography (PET) low-dose PET denoising multi-modality point-based representation context clusters generative adversarial network (GAN)
	Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FOM of 701 MW·cm-2 and Monolithic Integrated Digital Circuit 会议论文 ASIA-PACIFIC WORKSHOP ON WIDEGAP SEMICONDUCTORS, Busan,Korea, 2024.10.13-2024.10.17 作者: Han Gao; Yitian Gu; Yitai Zhu; Wenbo Ye; Xinbo Zou Adobe PDF(422Kb) \| 收藏 \| 浏览/下载：292/12 \| 提交时间：2024/09/27 GaN e-mode recess Monolithic
	Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment 期刊论文 MICROELECTRONICS JOURNAL, 2024, 卷号: 148 作者: Zhu, Yitai; Zhang, Yu; Qu, Haolan; Gao, Han; Du, Haitao Adobe PDF(4805Kb) \| 收藏 \| 浏览/下载：316/3 \| 提交时间：2024/06/11 AlGaN/GaN HEMT O 2 plasma treatment Current collapse Threshold voltage shift Dynamic characteristic
	Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer 期刊论文 HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175 作者: Wang, Kaichu; Ding, Qingfeng; Zhou, Qi; Cai, Xinhang; Zhang, Jinfeng 收藏 \| 浏览/下载：246/0 \| 提交时间：2024/09/20 Aluminum gallium nitride Beam forming networks Channel estimation Chemical lasers Computer testing Direction of arrival Distributed feedback lasers Dye lasers Frequency estimation Gallium nitride Heterodyne detection Heterodyning Heterojunctions High electron mobility transistors Hydrogen masers Laser accessories Laser theory Liquid lasers Radiometers Temperature sensors Terahertz wave detectors Tetrodes Time difference of arrival AlGaN/GaN high electron mobility transistors Arrayed detector Coherent detection Directionof-arrival (DOA) Estimation of direction of arrival terahertz wave Field of views Heterodyne (coherent) detection Linear-array Tera Hertz Vector detection
	Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy 会议论文 2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024 作者: Ke Li; Yi Ma; Xinbo Zou JPEG(176Kb) \| 收藏 \| 浏览/下载：154/0 \| 提交时间：2024/09/19 High electron mobility transistors III-V semiconductors Junction gate field effect transistors Masers Power amplifiers Power HEMT System-on-chip AM-AM distortion AM-PM Compensation strategy Gain compression GaN power amplifier Output power Power Power amplifier Soft gain compression Transistor architecture
	A high-RF-bandwidth, high-IF-bandwidth monolithic terahertz heterodyne receiver based on AlGaN/GaN nonlinear transmission lines as a local oscillator and mixer 期刊论文 APPLIED PHYSICS EXPRESS, 2024, 卷号: 17, 期号: 5 作者: Xiang, Lanyong; Zhou, Qi; Qin, Chenyang; Ding, Qingfeng; Zhu, Yifan Adobe PDF(931Kb) \| 收藏 \| 浏览/下载：264/0 \| 提交时间：2024/06/03 terahertz harmonic mixing nonlinear transmission line heterodyne receiver AlGaN/GaN

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