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	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：67/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99 作者: Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu Adobe PDF(1674Kb) \| 收藏 \| 浏览/下载：72/4 \| 提交时间：2025/02/12 Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
	Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3 期刊论文 NATIONAL SCIENCE REVIEW, 2024, 卷号: 11, 期号: 12 作者: Wang, Yuxiang; Zhao, Minhao; Zhang, Jinglei; Wu, Wenbin; Li, Shichao Adobe PDF(3166Kb) \| 收藏 \| 浏览/下载：152/4 \| 提交时间：2025/01/10 Calcium alloys Coherent scattering Colossal magnetoresistance Critical current density (superconductivity) Electron spin resonance spectroscopy Mott insulators Near infrared spectroscopy Quantum optics Shubnikov-de Haas effect Ioffe-Regel limit Limit sets Low bound Mean-free path Metallicities Mobility edge Mott-ioffe-regel limit Quantum oscillations Quasiparticles Van Hove singularities
	Trapping mechanism transition of Î³-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13 作者: Adobe PDF(2565Kb) \| 收藏 \| 浏览/下载：254/1 \| 提交时间：2024/10/08 Aluminum gallium nitride Electron traps Gamma rays Gates (transistor) High electron mobility transistors Irradiation Junction gate field effect transistors Threshold voltage 'current AlGaN Gate stacks Mg-doping Total ionizing dose effects Trap density Trap state Trapping mechanisms Voltage swings Voltage-controlled
	Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer 期刊论文 HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175 作者: Wang, Kaichu; Ding, Qingfeng; Zhou, Qi; Cai, Xinhang; Zhang, Jinfeng 收藏 \| 浏览/下载：246/0 \| 提交时间：2024/09/20 Aluminum gallium nitride Beam forming networks Channel estimation Chemical lasers Computer testing Direction of arrival Distributed feedback lasers Dye lasers Frequency estimation Gallium nitride Heterodyne detection Heterodyning Heterojunctions High electron mobility transistors Hydrogen masers Laser accessories Laser theory Liquid lasers Radiometers Temperature sensors Terahertz wave detectors Tetrodes Time difference of arrival AlGaN/GaN high electron mobility transistors Arrayed detector Coherent detection Directionof-arrival (DOA) Estimation of direction of arrival terahertz wave Field of views Heterodyne (coherent) detection Linear-array Tera Hertz Vector detection
	Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy 会议论文 2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024 作者: Ke Li; Yi Ma; Xinbo Zou JPEG(176Kb) \| 收藏 \| 浏览/下载：154/0 \| 提交时间：2024/09/19 High electron mobility transistors III-V semiconductors Junction gate field effect transistors Masers Power amplifiers Power HEMT System-on-chip AM-AM distortion AM-PM Compensation strategy Gain compression GaN power amplifier Output power Power Power amplifier Soft gain compression Transistor architecture
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: PP, 期号: 99, 页码: 1-1 作者: Yu Zhang; Renqiang Zhu; Haolan Qu; Yitian Gu; Huaxing Jiang Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：291/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET
	Dynamic Behavior of Above-Room-Temperature Robust Skyrmions in 2D Van der Waals Magnet 期刊论文 NANO LETTERS, 2024, 卷号: 24, 期号: 36, 页码: 11246-11254 作者: Shi, Hanqing; Zhang, Jingwei; Xi, Yilian; Li, Heping; Chen, Jingyi Adobe PDF(2474Kb) \| 收藏 \| 浏览/下载：231/3 \| 提交时间：2024/09/20 Accelerator magnets Carrier mobility Electron tube components Ferromagnetic materials Ferromagnetism Hall effect Hall effect devices III-V semiconductors Integrated circuits Layered semiconductors Magnetic semiconductors Semiconductor alloys Spin dynamics Spintronics Wide band gap semiconductors Above room temperature Current-driven Current-driven dynamic Dynamic behaviors Ferromagnets Skyrmions Spin configurations Two-dimensional Two-dimensional ferromagnet fe3gate2 Van der Waal
	Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review 期刊论文 MICROMACHINES, 2023, 卷号: 14, 期号: 11 作者: Zou, Xiazhi; Jiayi Yang Adobe PDF(3884Kb) \| 收藏 \| 浏览/下载：448/2 \| 提交时间：2023/11/20 High electron mobility transistors III-V semiconductors Characterization methods Characterization techniques Critical review Gallium nitride high-electron-mobility transistor High breakdown voltage High current densities High electron-mobility transistors High-power-density Power devices Trap
	Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET 期刊论文 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 卷号: 11, 页码: 319-324 作者: Yijun Qian; Qiang Liu; Jialun Yao; Xiaowei Wang; Amit Kumar Shukla Adobe PDF(4964Kb) \| 收藏 \| 浏览/下载：446/2 \| 提交时间：2023/06/30 High electron mobility transistors III-V semiconductors Leakage currents MOSFET devices Silicon on insulator technology Aging compensation Back bias Biasing techniques Forward back biasing technique Hot carrier degradation MOS-FET MOSFETs Off-state leakage current Performances evaluation Silicon-on-insulator MOSFETs

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