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Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications 期刊论文
SOLID-STATE ELECTRONICS, 2025, 卷号: 227
作者:  Guo, Haowen;  Ye, Wenbo;  Zhou, Junmin;  Gu, Yitian;  Gao, Han
Adobe PDF(4152Kb)  |  收藏  |  浏览/下载:39/1  |  提交时间:2025/05/12
Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Multi-Vth Power Device Platform for All-GaN Monolithic Integration 会议论文
INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS
作者:  Han Gao;  Yitian Gu;  Yudong Li;  Xuanling Zhou;  Haodong Jiang
Adobe PDF(1101Kb)  |  收藏  |  浏览/下载:82/4  |  提交时间:2025/03/03
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(1674Kb)  |  收藏  |  浏览/下载:85/5  |  提交时间:2025/02/12
1.48 dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Neutralized Ion Beam Etching for LNA Applications 会议论文
THE 11TH ASIA-PACIFIC WORKSHOP ON WIDEGAP SEMICONDUCTORS, Busan, Korea, October 13-17, 2024
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(197Kb)  |  收藏  |  浏览/下载:40/0  |  提交时间:2025/04/02
Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: 24, 期号: 3, 页码: 358-364
作者:  Yu Zhang;  Renqiang Zhu;  Haolan Qu;  Yitian Gu;  Huaxing Jiang
Adobe PDF(1470Kb)  |  收藏  |  浏览/下载:318/0  |  提交时间:2024/06/11
Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FOM of 701 MW·cm-2 and Monolithic Integrated Digital Circuit 会议论文
ASIA-PACIFIC WORKSHOP ON WIDEGAP SEMICONDUCTORS, Busan,Korea, 2024.10.13-2024.10.17
作者:  Han Gao;  Yitian Gu;  Yitai Zhu;  Wenbo Ye;  Xinbo Zou
Adobe PDF(422Kb)  |  收藏  |  浏览/下载:306/12  |  提交时间:2024/09/27
AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing 期刊论文
APL MACHINE LEARNING, 2024, 卷号: 2, 期号: 2
作者:  Chen JX(陈嘉祥);  Du HT(杜海涛);  Qu HL(屈昊岚);  Gao H(高涵);  Gu YT(顾怡恬)
Adobe PDF(8964Kb)  |  收藏  |  浏览/下载:207/11  |  提交时间:2024/09/13
545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2024, 卷号: 45, 期号: 6, 页码: 968-971
作者:  Han Gao;  Yitian Gu;  Yu Zhang;  Jialun Li;  Junmin Zhou
Adobe PDF(2787Kb)  |  收藏  |  浏览/下载:278/2  |  提交时间:2024/04/16
Nonlinear Capacitance Compensation Method for Integrating a Metal-Semiconductor-Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier 期刊论文
ELECTRONICS, 2024, 卷号: 13, 期号: 7
作者:  Li, Ke;  Gu, Yitian;  Guo, Haowen;  Zou, Xinbo
Adobe PDF(9388Kb)  |  收藏  |  浏览/下载:288/0  |  提交时间:2024/05/14
LoCI-DiffCom: Longitudinal Consistency-Informed Diffusion Model for 3D Infant Brain Image Completion 会议论文
MEDICAL IMAGE COMPUTING AND COMPUTER ASSISTED INTERVENTION - MICCAI 2024, PT II, Palmeraie Conf Ctr,Marrakesh,MOROCCO, OCT 06-10, 2024
作者:  Zihao Zhu;  Tianli Tao;  Yitian Tao;  Haowen Deng;  Xinyi Cai
Adobe PDF(4119Kb)  |  收藏  |  浏览/下载:400/18  |  提交时间:2024/09/20
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