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期刊影响因子降序
Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga
2
O
3
power diode
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 卷号: 187
作者:
Adobe PDF(6465Kb)
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浏览/下载:322/4
|
提交时间:2024/11/29
Proton irradiation
Static characteristics
Trap characteristics
Dynamic characteristics
The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 卷号: 166
作者:
Zhu, Yicheng
;
Wang, Wenjuan
;
Zhou, Min
;
Qu, Huidan
;
Li, Guanhai
Adobe PDF(6984Kb)
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收藏
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浏览/下载:474/1
|
提交时间:2023/07/28
Aspect ratio
Chlorine compounds
Etching
Fabrication
III-V semiconductors
Inductively coupled plasma
Optimization
Photodetectors
Photons
Semiconducting indium
Semiconducting indium gallium arsenide
Semiconducting indium phosphide
Temperature
Deep etching
Etching process
High aspect ratio structure fabrication
High aspect ratio structures
Inductively coupled plasma deep etching
Inductively-coupled plasma
InP based
Lows-temperatures
MetaLens
Structure fabrication
300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 卷号: 164
作者:
Fang, Wencheng
;
Zheng, Jia
;
Zhang, Jiarui
;
Li, Chengxing
;
Wang, Ruobing
Adobe PDF(9718Kb)
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收藏
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浏览/下载:319/1
|
提交时间:2023/07/07
Efficiency
Inductively coupled plasma
Phase change materials
Phase change memory
Physical vapor deposition
Plasma etching
Anisotropic plasma etching
Aspect-ratio
Confined structures
Conformal deposition
Deposition technique
Heating efficiencies
Inductively coupled plasma etching
Phase-change memory
Physical vapour deposition
Reset currents
Secondary defects of as-grown oxygen precipitates in nitrogen doped Czochralski single crystal silicon
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 卷号: 163
作者:
Tuo, Huan
;
Liu, Yun
;
Li, Minghao
;
Dai, Rongwang
;
Wang, Hao
Adobe PDF(9508Kb)
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收藏
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浏览/下载:298/2
|
提交时间:2023/06/02
Chlorine compounds
Defects
Doping (additives)
Etching
Light scattering
Monocrystalline silicon
Nitrogen
Oxygen
Scanning electron microscopy
Single crystals
As-grown
As-grown oxygen precipitate
CZ silicon
Epitaxial layers growth
Localized lights
Nitrogen-doped
Nitrogen-doped czochralski
Oxygen precipitates
Secondary defect
Single crystal silicon
Investigation of microscale and nanoscale twin lamellae in monocrystalline silicon grown by Czochralski method
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 卷号: 149
作者:
Liu, Yun
;
Liu, Wenkai
;
Wei, Tao
;
Li, Zhan
;
Li, Minghao
Adobe PDF(12328Kb)
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浏览/下载:299/4
|
提交时间:2022/07/04
Microscale twin lamellae
Monocrystalline silicon
Nanoscale twin lamellae
Effect of post-deposition annealing on atomic layer deposited SiO2 film for silicon surface passivation
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 卷号: 106
作者:
Li, Shizheng
;
Xu, Jiahui
;
Wang, Liangxing
;
Yang, Ning
;
Ye, Xiaojun
Adobe PDF(1189Kb)
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收藏
|
浏览/下载:529/10
|
提交时间:2019/11/22
Atomic layer deposition
Silicon dioxide
Surface passivation
Positive fixed charge
Plasma-induced damage and annealing repairing in ALD-Al2O3/PECVD-SiNx stacks
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 卷号: 100, 页码: 214-219
作者:
Li, Shizheng
;
Yang, Ning
;
Yuan, Xiao
;
ye, Xiaojun
;
Wang, Liangxing
Adobe PDF(2081Kb)
|
收藏
|
浏览/下载:533/11
|
提交时间:2019/07/01
Silicon passivation
Atomic layer deposition
Al2O3
Interface defect density
Plasma-enhanced chemical vapor deposition
Solar cells
RESET current optimization for phase change memory based on the sub-threshold slope
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 卷号: 97, 页码: 11-16
作者:
Wu, Lei
;
Chen, Yi-Feng
;
Cai, Dao-Lin
;
Lu, Yao-Yao
;
Guo, Tian-Qi
Adobe PDF(1536Kb)
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收藏
|
浏览/下载:520/7
|
提交时间:2019/05/05
Phase change memory (PCM)
RESET current optimization
Sub-threshold slope (STS)
Voltage stress
Endurance performance
Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 67, 页码: 104-109
作者:
Li, Jingjie
;
Cheng, Xinhong
;
Wang, Qian
;
Zheng, Li
;
Shen, Lingyan
Adobe PDF(915Kb)
|
收藏
|
浏览/下载:726/3
|
提交时间:2017/08/26
SiC
ICP etching
Ni/Al2O3 mask
Contamination
Micro-mask
Micro-trench
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