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合作作者[TOP 5]

  • 邹新波

    合作成果数：18

  • 顾怡恬

    合作成果数：10

  • 周隽民

    合作成果数：8

  • 张羽

    合作成果数：6

  • 陈佰乐

    合作成果数：5

访问统计


  总访问量
 768
  访问来源
    内部： 3
    外部： 765
    国内： 659
    国外： 109

  年访问量
 147
  访问来源
    内部： 0
    外部： 147
    国内： 134
    国外： 13

  月访问量
 12
  访问来源
    内部： 0
    外部： 12
    国内： 12
    国外： 0

访问量

访问量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [1082]
2. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [504]
3. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [396]
4. RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain.. [381]
5. Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic.. [376]
6. Temperature-Dependent Electrical Characterizations of Neutron-Irra.. [347]
7. Suppressed current collapse and improved threshold voltage stabili.. [322]
8. Comparative Study on Dynamic Characteristics of GaN HEMT at 300K a.. [318]
9. 一种面向倍频应用的氮化镓双向导通二极管以及制作方法 [300]
10. Demonstration and modeling of frequency tripler based on GaN Schot.. [283]
11. Nonlinear Capacitance Compensation Method for Integrating a Metal-.. [277]
12. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Diel.. [261]
13. Acceleration of solving drift-diffusion equations enabled by estim.. [255]
14. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [251]
15. High Quality Factor AlScN Lamb Wave Resonators Using NbN/Al Top El.. [230]
16. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [75]
17. 1.48 dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Neutraliz.. [27]
18. Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration .. [12]

下载量

1. Power Compression and Phase Analysis of GaN HEMT for Microwave Rec.. [500]
2. 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Bas.. [4]
3. Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes.. [3]
4. Suppressed current collapse and improved threshold voltage stabili.. [3]
5. Output Phase and Amplitude Analysis of GaN-based HEMT at Cryogenic.. [2]
6. Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si [2]
7. High Quality Factor AlScN Lamb Wave Resonators Using NbN/Al Top El.. [2]
8. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Diel.. [1]
9. Temperature-Dependent Electrical Characterizations of Neutron-Irra.. [1]
10. RF p-GaN HEMT with 0.9-dB Noise Figure and 12.8-dB Associated Gain.. [1]
11. 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam .. [1]
12. Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration .. [1]