Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask

doi:10.1016/j.mssp.2017.05.022

	Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask
	Li, Jingjie1,2,3 ; Cheng, Xinhong 1; Wang, Qian 1,3; Zheng, Li 1,3; Shen, Lingyan 1,3; Li, Xinchang 1,3; Zhang, Dongliang 1,3; Zhu, Hongyue 1,3; Shen, DaShen 4; Yu, Yuehui1,2
	2017-08-15
发表期刊	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (IF:4.2[JCR-2023],3.9[5-Year])
ISSN	1369-8001
卷号	67 页码:104-109
发表状态	已发表
DOI	10.1016/j.mssp.2017.05.022
摘要	In this work, we performed an inductively coupled plasma (ICP) etching of SiC substrates using different masks including SiO2, Ni, Ni/SiO2 and Ni/Al2O3, and the properties of trenches were systemically analyzed. In comparison with other three masks, Ni/Al2O3 mask prevented contamination of F or Ni element from diffusion into SiC, and achieved the optimized trench morphology with a surface roughness of 0.2 nm, steep sidewall and no micro-trench at the corner. Al2O3 dielectric films were deposited on trenches by plasma enhanced atomic layer deposition (PEALD), and its critical breakdown electrical field was much higher with Ni/Al2O3 mask, which could reach 7.7 MV/cm. So it was believed that Ni/Al2O3 mask ensured the formation of SiC trench with superior morphology.
关键词	SiC ICP etching Ni/Al2O3 mask Contamination Micro-mask Micro-trench
收录类别	SCI ; EI
语种	英语
资助项目	National Scientific Foundation of Shanghai[Y52GXA1J01]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000403992400016
出版者	ELSEVIER SCI LTD
EI入藏号	20172103688598
EI主题词	Atomic layer deposition ; Contamination ; Dielectric films ; Fluorine ; Inductively coupled plasma ; Morphology ; Silicon carbide ; Surface roughness
EI分类号	Nickel:548.1 ; Dielectric Materials:708.1 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Coating Techniques:813.1 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Plasma Physics:932.3
WOS关键词	SILICON-CARBIDE ; LAYER ; POWER ; UMOSFETS ; SF6/O-2 ; DIODES ; DAMAGE ; RATES ; FIELD
原始文献类型	Article
通讯作者	Li, Jingjie
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2867
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_俞跃辉组物质科学与技术学院_硕士生
通讯作者	Li, Jingjie
作者单位	1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Changning Rd 865, Shanghai 200050, Peoples R China 2.Shanghaitech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Li, Jingjie,Cheng, Xinhong,Wang, Qian,et al. Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,67:104-109.
APA	Li, Jingjie.,Cheng, Xinhong.,Wang, Qian.,Zheng, Li.,Shen, Lingyan.,...&Yu, Yuehui.(2017).Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,67,104-109.
MLA	Li, Jingjie,et al."Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 67(2017):104-109.