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| Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application | |
| 2018-05 | |
| Source Publication | SCIENTIFIC REPORTS
 |
| ISSN | 2045-2322 |
| Volume | 8 |
| Status | 已发表 |
| DOI | 10.1038/s41598-018-25215-z |
| Abstract | Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb2Te alloy. Sc0.1Sb2Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb2Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed. |
| Indexed By | SCI ; SCIE |
| Language | 英语 |
| Funding Project | National Key Research and Development Program of China[17YFB0405601] |
| WOS Research Area | Science & Technology - Other Topics |
| WOS Subject | Multidisciplinary Sciences |
| WOS ID | WOS:000431114200018 |
| Publisher | NATURE PUBLISHING GROUP |
| WOS Keyword | TRANSITION |
| Original Document Type | Article |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20830 |
| Collection | 物质科学与技术学院 物质科学与技术学院_特聘教授组_宋志棠组 物质科学与技术学院_博士生 |
| Corresponding Author | Cheng, Yang |
| Affiliation | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China 4.East China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R China |
| First Author Affilication | School of Physical Science and Technology |
| Recommended Citation GB/T 7714 | Chen, Xin,Zheng, Yonghui,Zhu, Min,et al. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application[J]. SCIENTIFIC REPORTS,2018,8. |
| APA | Chen, Xin.,Zheng, Yonghui.,Zhu, Min.,Ren, Kun.,Wang, Yong.,...&Song, Zhitang.(2018).Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.SCIENTIFIC REPORTS,8. |
| MLA | Chen, Xin,et al."Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application".SCIENTIFIC REPORTS 8(2018). |
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