Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application

doi:10.1038/s41598-018-25215-z

	Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
	Chen, Xin1,2 ; Zheng, Yonghui 1; Zhu, Min 1; Ren, Kun 1; Wang, Yong 1; Li, Tao 1; Liu, Guangyu 1; Guo, Tianqi 1; Wu, Lei 1; Liu, Xianqiang 3; Cheng, Yang 1,4; Song, Zhitang1,2
	2018-05
发表期刊	SCIENTIFIC REPORTS (IF:3.8[JCR-2023],4.3[5-Year])
ISSN	2045-2322
卷号	8
发表状态	已发表
DOI	10.1038/s41598-018-25215-z
摘要	Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb2Te alloy. Sc0.1Sb2Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb2Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.
收录类别	SCI ; SCIE
语种	英语
资助项目	National Key Research and Development Program of China[17YFB0405601]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000431114200018
出版者	NATURE PUBLISHING GROUP
WOS关键词	TRANSITION
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20830
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_宋志棠组物质科学与技术学院_博士生
通讯作者	Cheng, Yang
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China 4.East China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Chen, Xin,Zheng, Yonghui,Zhu, Min,et al. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application[J]. SCIENTIFIC REPORTS,2018,8.
APA	Chen, Xin.,Zheng, Yonghui.,Zhu, Min.,Ren, Kun.,Wang, Yong.,...&Song, Zhitang.(2018).Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.SCIENTIFIC REPORTS,8.
MLA	Chen, Xin,et al."Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application".SCIENTIFIC REPORTS 8(2018).