Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
Chen, Xin1,2; Zheng, Yonghui1; Zhu, Min1; Ren, Kun1; Wang, Yong1; Li, Tao1; Liu, Guangyu1; Guo, Tianqi1; Wu, Lei1; Liu, Xianqiang3; Cheng, Yang1,4; Song, Zhitang1,2
2018-05
Source PublicationSCIENTIFIC REPORTS
ISSN2045-2322
Volume8
Status已发表
DOI10.1038/s41598-018-25215-z
AbstractPhase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb2Te alloy. Sc0.1Sb2Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb2Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.
Indexed BySCI
Language英语
Funding ProjectNational Key Research and Development Program of China[17YFB0405601]
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000431114200018
PublisherNATURE PUBLISHING GROUP
WOS KeywordTRANSITION
Original Document TypeArticle
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20830
Collection物质科学与技术学院
物质科学与技术学院_特聘教授组_宋志棠组
物质科学与技术学院_博士生
Corresponding AuthorCheng, Yang
Affiliation1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
3.Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
4.East China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R China
First Author AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Chen, Xin,Zheng, Yonghui,Zhu, Min,et al. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application[J]. SCIENTIFIC REPORTS,2018,8.
APA Chen, Xin.,Zheng, Yonghui.,Zhu, Min.,Ren, Kun.,Wang, Yong.,...&Song, Zhitang.(2018).Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.SCIENTIFIC REPORTS,8.
MLA Chen, Xin,et al."Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application".SCIENTIFIC REPORTS 8(2018).
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