Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application
2018-05
发表期刊SCIENTIFIC REPORTS
ISSN2045-2322
卷号8
发表状态已发表
DOI10.1038/s41598-018-25215-z
摘要Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb2Te alloy. Sc0.1Sb2Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb2Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.
收录类别SCI ; SCIE
语种英语
资助项目National Key Research and Development Program of China[17YFB0405601]
WOS研究方向Science & Technology - Other Topics
WOS类目Multidisciplinary Sciences
WOS记录号WOS:000431114200018
出版者NATURE PUBLISHING GROUP
WOS关键词TRANSITION
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/20830
专题物质科学与技术学院
物质科学与技术学院_特聘教授组_宋志棠组
物质科学与技术学院_博士生
通讯作者Cheng, Yang
作者单位
1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
3.Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
4.East China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R China
第一作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Chen, Xin,Zheng, Yonghui,Zhu, Min,et al. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application[J]. SCIENTIFIC REPORTS,2018,8.
APA Chen, Xin.,Zheng, Yonghui.,Zhu, Min.,Ren, Kun.,Wang, Yong.,...&Song, Zhitang.(2018).Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.SCIENTIFIC REPORTS,8.
MLA Chen, Xin,et al."Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application".SCIENTIFIC REPORTS 8(2018).
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