Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

doi:10.1016/j.infrared.2018.03.004

	Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate
	Deng, Zhuo1 ; Chen, Baile1 ; Chen, Xiren 2; Shao, Jun 2; Gong, Qian1,3 ; Liu, Huiyun 4; Wu, Jiang 4
	2018-05
发表期刊	INFRARED PHYSICS & TECHNOLOGY (IF:3.1[JCR-2023],3.0[5-Year])
ISSN	1350-4495
卷号	90 页码:115-121
发表状态	已发表
DOI	10.1016/j.infrared.2018.03.004
摘要	In this work, the effects of p-type beryllium (Be) doping on the optical properties of GaSb epilayers grown on GaAs substrate by Molecular Beam Epitaxy (MBE) have been studied. Temperature- and excitation power-dependent photoluminescence (PL) measurements were performed on both nominally undoped and intentionally Be-doped GaSb layers. Clear PL emissions are observable even at the temperature of 270 K from both layers, indicating the high material quality. In the Be-doped GaSb layer, the transition energies of main PL features exhibit red-shift up to similar to 7 meV, and the peak widths characterized by Full-Width-at-Half-Maximum (FWHM) also decrease. In addition, analysis on the PL integrated intensity in the Be-doped sample reveals a gain of emission signal, as well as a larger carrier thermal activation energy. These distinctive PL behaviors identified in the Be-doped GaSb layer suggest that the residual compressive strain is effectively relaxed in the epilayer, due possibly to the reduction of dislocation density in the GaSb layer with the intentional incorporation of Be dopants. Our results confirm the role of Be as a promising dopant in the improvement of crystalline quality in GaSb, which is a crucial factor for growth and fabrication of high quality strain-free GaSb-based devices on foreign substrates. (C) 2018 Elsevier B.V. All rights reserved.
关键词	Gallium antimonite Beryllium doping Photoluminescence Threading dislocation Strain
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	STCSM[16ZR1441400] ; STCSM[16JC1402400]
WOS研究方向	Instruments & Instrumentation ; Optics ; Physics
WOS类目	Instruments & Instrumentation ; Optics ; Physics, Applied
WOS记录号	WOS:000431935500016
出版者	ELSEVIER SCIENCE BV
EI入藏号	20181104906012
EI主题词	Activation analysis ; Activation energy ; Beryllium ; Doping (additives) ; Epilayers ; Epitaxial growth ; Gallium arsenide ; III-V semiconductors ; Molecular beam epitaxy ; Optical properties ; Photoluminescence ; Semiconducting gallium ; Semiconductor quantum wells ; Strain ; Substrates
EI分类号	Nonferrous Metals and Alloys:549 ; Semiconducting Materials:712.1 ; Single Element Semiconducting Materials:712.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Chemical Operations:802.3 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 ; Materials Science:951
WOS关键词	MOLECULAR-BEAM EPITAXY ; PHOTOLUMINESCENCE ; INAS ; SPECTROSCOPY ; LAYERS ; MOVPE
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/18242
专题	信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_特聘教授组_龚谦组
通讯作者	Chen, Baile; Shao, Jun; Wu, Jiang
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai, Peoples R China 4.UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Deng, Zhuo,Chen, Baile,Chen, Xiren,et al. Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate[J]. INFRARED PHYSICS & TECHNOLOGY,2018,90:115-121.
APA	Deng, Zhuo.,Chen, Baile.,Chen, Xiren.,Shao, Jun.,Gong, Qian.,...&Wu, Jiang.(2018).Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate.INFRARED PHYSICS & TECHNOLOGY,90,115-121.
MLA	Deng, Zhuo,et al."Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate".INFRARED PHYSICS & TECHNOLOGY 90(2018):115-121.