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Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate | |
2018-05 | |
发表期刊 | INFRARED PHYSICS & TECHNOLOGY (IF:3.1[JCR-2023],3.0[5-Year]) |
ISSN | 1350-4495 |
卷号 | 90页码:115-121 |
发表状态 | 已发表 |
DOI | 10.1016/j.infrared.2018.03.004 |
摘要 | In this work, the effects of p-type beryllium (Be) doping on the optical properties of GaSb epilayers grown on GaAs substrate by Molecular Beam Epitaxy (MBE) have been studied. Temperature- and excitation power-dependent photoluminescence (PL) measurements were performed on both nominally undoped and intentionally Be-doped GaSb layers. Clear PL emissions are observable even at the temperature of 270 K from both layers, indicating the high material quality. In the Be-doped GaSb layer, the transition energies of main PL features exhibit red-shift up to similar to 7 meV, and the peak widths characterized by Full-Width-at-Half-Maximum (FWHM) also decrease. In addition, analysis on the PL integrated intensity in the Be-doped sample reveals a gain of emission signal, as well as a larger carrier thermal activation energy. These distinctive PL behaviors identified in the Be-doped GaSb layer suggest that the residual compressive strain is effectively relaxed in the epilayer, due possibly to the reduction of dislocation density in the GaSb layer with the intentional incorporation of Be dopants. Our results confirm the role of Be as a promising dopant in the improvement of crystalline quality in GaSb, which is a crucial factor for growth and fabrication of high quality strain-free GaSb-based devices on foreign substrates. (C) 2018 Elsevier B.V. All rights reserved. |
关键词 | Gallium antimonite Beryllium doping Photoluminescence Threading dislocation Strain |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | STCSM[16ZR1441400] ; STCSM[16JC1402400] |
WOS研究方向 | Instruments & Instrumentation ; Optics ; Physics |
WOS类目 | Instruments & Instrumentation ; Optics ; Physics, Applied |
WOS记录号 | WOS:000431935500016 |
出版者 | ELSEVIER SCIENCE BV |
EI入藏号 | 20181104906012 |
EI主题词 | Activation analysis ; Activation energy ; Beryllium ; Doping (additives) ; Epilayers ; Epitaxial growth ; Gallium arsenide ; III-V semiconductors ; Molecular beam epitaxy ; Optical properties ; Photoluminescence ; Semiconducting gallium ; Semiconductor quantum wells ; Strain ; Substrates |
EI分类号 | Nonferrous Metals and Alloys:549 ; Semiconducting Materials:712.1 ; Single Element Semiconducting Materials:712.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Chemical Operations:802.3 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 ; Materials Science:951 |
WOS关键词 | MOLECULAR-BEAM EPITAXY ; PHOTOLUMINESCENCE ; INAS ; SPECTROSCOPY ; LAYERS ; MOVPE |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/18242 |
专题 | 信息科学与技术学院_PI研究组_陈佰乐组 信息科学与技术学院_特聘教授组_龚谦组 |
通讯作者 | Chen, Baile; Shao, Jun; Wu, Jiang |
作者单位 | 1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai, Peoples R China 4.UCL, Dept Elect & Elect Engn, London WC1E 7JE, England |
第一作者单位 | 信息科学与技术学院 |
通讯作者单位 | 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Deng, Zhuo,Chen, Baile,Chen, Xiren,et al. Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate[J]. INFRARED PHYSICS & TECHNOLOGY,2018,90:115-121. |
APA | Deng, Zhuo.,Chen, Baile.,Chen, Xiren.,Shao, Jun.,Gong, Qian.,...&Wu, Jiang.(2018).Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate.INFRARED PHYSICS & TECHNOLOGY,90,115-121. |
MLA | Deng, Zhuo,et al."Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate".INFRARED PHYSICS & TECHNOLOGY 90(2018):115-121. |
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