Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate
2018-05
发表期刊INFRARED PHYSICS & TECHNOLOGY (IF:3.1[JCR-2023],3.0[5-Year])
ISSN1350-4495
卷号90页码:115-121
发表状态已发表
DOI10.1016/j.infrared.2018.03.004
摘要In this work, the effects of p-type beryllium (Be) doping on the optical properties of GaSb epilayers grown on GaAs substrate by Molecular Beam Epitaxy (MBE) have been studied. Temperature- and excitation power-dependent photoluminescence (PL) measurements were performed on both nominally undoped and intentionally Be-doped GaSb layers. Clear PL emissions are observable even at the temperature of 270 K from both layers, indicating the high material quality. In the Be-doped GaSb layer, the transition energies of main PL features exhibit red-shift up to similar to 7 meV, and the peak widths characterized by Full-Width-at-Half-Maximum (FWHM) also decrease. In addition, analysis on the PL integrated intensity in the Be-doped sample reveals a gain of emission signal, as well as a larger carrier thermal activation energy. These distinctive PL behaviors identified in the Be-doped GaSb layer suggest that the residual compressive strain is effectively relaxed in the epilayer, due possibly to the reduction of dislocation density in the GaSb layer with the intentional incorporation of Be dopants. Our results confirm the role of Be as a promising dopant in the improvement of crystalline quality in GaSb, which is a crucial factor for growth and fabrication of high quality strain-free GaSb-based devices on foreign substrates. (C) 2018 Elsevier B.V. All rights reserved.
关键词Gallium antimonite Beryllium doping Photoluminescence Threading dislocation Strain
收录类别SCI ; SCIE ; EI
语种英语
资助项目STCSM[16ZR1441400] ; STCSM[16JC1402400]
WOS研究方向Instruments & Instrumentation ; Optics ; Physics
WOS类目Instruments & Instrumentation ; Optics ; Physics, Applied
WOS记录号WOS:000431935500016
出版者ELSEVIER SCIENCE BV
EI入藏号20181104906012
EI主题词Activation analysis ; Activation energy ; Beryllium ; Doping (additives) ; Epilayers ; Epitaxial growth ; Gallium arsenide ; III-V semiconductors ; Molecular beam epitaxy ; Optical properties ; Photoluminescence ; Semiconducting gallium ; Semiconductor quantum wells ; Strain ; Substrates
EI分类号Nonferrous Metals and Alloys:549 ; Semiconducting Materials:712.1 ; Single Element Semiconducting Materials:712.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Chemical Operations:802.3 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 ; Materials Science:951
WOS关键词MOLECULAR-BEAM EPITAXY ; PHOTOLUMINESCENCE ; INAS ; SPECTROSCOPY ; LAYERS ; MOVPE
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/18242
专题信息科学与技术学院_PI研究组_陈佰乐组
信息科学与技术学院_特聘教授组_龚谦组
通讯作者Chen, Baile; Shao, Jun; Wu, Jiang
作者单位
1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai, Peoples R China
3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai, Peoples R China
4.UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
第一作者单位信息科学与技术学院
通讯作者单位信息科学与技术学院
第一作者的第一单位信息科学与技术学院
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Deng, Zhuo,Chen, Baile,Chen, Xiren,et al. Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate[J]. INFRARED PHYSICS & TECHNOLOGY,2018,90:115-121.
APA Deng, Zhuo.,Chen, Baile.,Chen, Xiren.,Shao, Jun.,Gong, Qian.,...&Wu, Jiang.(2018).Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate.INFRARED PHYSICS & TECHNOLOGY,90,115-121.
MLA Deng, Zhuo,et al."Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate".INFRARED PHYSICS & TECHNOLOGY 90(2018):115-121.
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