浏览条目

浏览/检索结果: 共5条,第1-5条 帮助

限定条件                
已选(0)清除 条数/页:   排序方式:
The impact of P-type doping level and profile on performance of InAs quantum dot lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2024, 卷号: 136, 期号: 22
作者:  Liu, Ruo-Tao;  Du, An-Tian;  Cao, Chun-Fang;  Yang, Jin;  Wu, Jian-Chu
Adobe PDF(3215Kb)  |  收藏  |  浏览/下载:30/2  |  提交时间:2024/12/23
Strain distribution in the active region of InAs-based interband cascade laser 期刊论文
JOURNAL OF APPLIED PHYSICS, 2024, 卷号: 135, 期号: 24
作者:  Wu, Jian-Chu;  Liu, Ruo-Tao;  Du, An-Tian;  Wang, Kun;  Cao, Chun-Fang
Adobe PDF(3538Kb)  |  收藏  |  浏览/下载:122/1  |  提交时间:2024/07/15
Composition measurement of fully-strained epitaxial InxGa1-xAsyP1-y/InP layer by temperature dependent X-ray diffraction 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2022, 卷号: 599
作者:  Lin, Si-Wei;  Yan, Jin-Yi;  Zhao, Xu-Yi;  Yu, Wen-Fu;  Gong, Qian
Adobe PDF(1863Kb)  |  收藏  |  浏览/下载:193/0  |  提交时间:2022/11/08
Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate 期刊论文
INFRARED PHYSICS & TECHNOLOGY, 2018, 卷号: 90, 页码: 115-121
作者:  Deng, Zhuo;  Chen, Baile;  Chen, Xiren;  Shao, Jun;  Gong, Qian
Adobe PDF(799Kb)  |  收藏  |  浏览/下载:485/1  |  提交时间:2018/04/11
Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 23, 页码: 28817-28824
作者:  Zhou, Yue-Guang;  Zhou, Cheng;  Cao, Chun-Fang;  Du, Jiang-Bing;  Gong, Qian
Adobe PDF(2594Kb)  |  收藏  |  浏览/下载:599/2  |  提交时间:2017/12/12