A review on GaN-based two-terminal devices grown on Si substrates

doi:10.1016/j.jallcom.2021.159214

	A review on GaN-based two-terminal devices grown on Si substrates
	Zhang, Yu1,2,3 ; Liu, Chao 4; Zhu, Min1,2,3 ; Zhang, Yuliang1,2,3 ; Zou, Xinbo1
	2021-07-15
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS (IF:5.8[JCR-2023],5.3[5-Year])
ISSN	09258388
卷号	869 期号:15 页码:159214
发表状态	已发表
DOI	10.1016/j.jallcom.2021.159214
摘要	Gallium nitride (GaN) based two-terminal devices, such as Schottky barrier diodes (SBDs), p-i-n diodes and light-emitting diodes (LEDs) are essential components for power conversion and optoelectronic applications, due to superior material properties including wide band gap (3.4 eV), high electron velocity, and large critical breakdown field. This article reviews the recent progress made in GaN two-terminal devices grown on lattice-mismatched Si substrates. Advances in material epitaxy, device design, and fabrication technology are illustrated for GaN diodes. A comprehensive overview of static and dynamic characteristics for both quasi- and fully-vertical p-i-n diodes are presented. With the developments of device design and processing technologies, various cracks-free LEDs-on-Si are achieved with wide spectrum coverage and improved efficiency. Nanowire LEDs and micro-LED display using GaN-on-Si epitaxy are also discussed. In addition, monolithic integration of GaN diodes with transistors as well as photodetectors enables creation of compact components with much reduced parasitic and small footprint, unlocking great potential of GaN-based device technology for versatile functionalities. © 2021
关键词	Energy gap III V semiconductors Light emitting diodes Schottky barrier diodes Silicon Substrates Barrier diodes Design technologies Device design Lightemitting diode Optoelectronic applications PiN diode Power conversion Schottky barriers Si substrates Two terminal devices GaN Two-terminal devices SBDs p-i-n diodes LEDs
收录类别	SCI ; SCIE ; EI
语种	英语
出版者	Elsevier Ltd
EI入藏号	20211110072031
EI主题词	Gallium nitride
EI分类号	549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/133242
专题	信息科学与技术学院_博士生信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_硕士生
通讯作者	Zou, Xinbo
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai; 200050, China; 3.School of Microelectronics, University of Chinese Academy of Sciences, Beijing; 100049, China; 4.School of Microelectronics, Shandong University, Jinan; 250100, China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Yu,Liu, Chao,Zhu, Min,et al. A review on GaN-based two-terminal devices grown on Si substrates[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,869(15):159214.
APA	Zhang, Yu,Liu, Chao,Zhu, Min,Zhang, Yuliang,&Zou, Xinbo.(2021).A review on GaN-based two-terminal devices grown on Si substrates.JOURNAL OF ALLOYS AND COMPOUNDS,869(15),159214.
MLA	Zhang, Yu,et al."A review on GaN-based two-terminal devices grown on Si substrates".JOURNAL OF ALLOYS AND COMPOUNDS 869.15(2021):159214.