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A review on GaN-based two-terminal devices grown on Si substrates | |
2021-07-15 | |
发表期刊 | JOURNAL OF ALLOYS AND COMPOUNDS (IF:5.8[JCR-2023],5.3[5-Year]) |
ISSN | 09258388 |
卷号 | 869期号:15页码:159214 |
发表状态 | 已发表 |
DOI | 10.1016/j.jallcom.2021.159214 |
摘要 | Gallium nitride (GaN) based two-terminal devices, such as Schottky barrier diodes (SBDs), p-i-n diodes and light-emitting diodes (LEDs) are essential components for power conversion and optoelectronic applications, due to superior material properties including wide band gap (3.4 eV), high electron velocity, and large critical breakdown field. This article reviews the recent progress made in GaN two-terminal devices grown on lattice-mismatched Si substrates. Advances in material epitaxy, device design, and fabrication technology are illustrated for GaN diodes. A comprehensive overview of static and dynamic characteristics for both quasi- and fully-vertical p-i-n diodes are presented. With the developments of device design and processing technologies, various cracks-free LEDs-on-Si are achieved with wide spectrum coverage and improved efficiency. Nanowire LEDs and micro-LED display using GaN-on-Si epitaxy are also discussed. In addition, monolithic integration of GaN diodes with transistors as well as photodetectors enables creation of compact components with much reduced parasitic and small footprint, unlocking great potential of GaN-based device technology for versatile functionalities. © 2021 |
关键词 | Energy gap III V semiconductors Light emitting diodes Schottky barrier diodes Silicon Substrates Barrier diodes Design technologies Device design Lightemitting diode Optoelectronic applications PiN diode Power conversion Schottky barriers Si substrates Two terminal devices GaN Two-terminal devices SBDs p-i-n diodes LEDs |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
出版者 | Elsevier Ltd |
EI入藏号 | 20211110072031 |
EI主题词 | Gallium nitride |
EI分类号 | 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/133242 |
专题 | 信息科学与技术学院_博士生 信息科学与技术学院_PI研究组_邹新波组 信息科学与技术学院_硕士生 |
通讯作者 | Zou, Xinbo |
作者单位 | 1.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai; 200050, China; 3.School of Microelectronics, University of Chinese Academy of Sciences, Beijing; 100049, China; 4.School of Microelectronics, Shandong University, Jinan; 250100, China |
第一作者单位 | 信息科学与技术学院 |
通讯作者单位 | 信息科学与技术学院 |
第一作者的第一单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Zhang, Yu,Liu, Chao,Zhu, Min,et al. A review on GaN-based two-terminal devices grown on Si substrates[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,869(15):159214. |
APA | Zhang, Yu,Liu, Chao,Zhu, Min,Zhang, Yuliang,&Zou, Xinbo.(2021).A review on GaN-based two-terminal devices grown on Si substrates.JOURNAL OF ALLOYS AND COMPOUNDS,869(15),159214. |
MLA | Zhang, Yu,et al."A review on GaN-based two-terminal devices grown on Si substrates".JOURNAL OF ALLOYS AND COMPOUNDS 869.15(2021):159214. |
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