An Efficient Steady-State Simulation of Class-E Resonant Inverter Considering MOSFET Parasitic Components by Using Extended Impedance Method

doi:10.1109/IFEEC.2017.7992441

	An Efficient Steady-State Simulation of Class-E Resonant Inverter Considering MOSFET Parasitic Components by Using Extended Impedance Method
	Liang, Junrui; Zhang, Shuai
	2017
会议录名称	2017 IEEE 3RD INTERNATIONAL FUTURE ENERGY ELECTRONICS CONFERENCE AND ECCE ASIA (IFEEC 2017-ECCE ASIA)
页码	190-195
发表状态	已发表
DOI	10.1109/IFEEC.2017.7992441
摘要	In the previous studies, it has been shown that the steady-state operation of a class-E resonant inverter can be rapidly simulated in the frequency domain by extending the concept and mathematical form of electrical impedance. This paper provides a more comprehensive solution for the efficient simulation of practical class-E resonant inverter, which is driven by a MOSFET switch. The parasitic components, which might influence the operation of the resonant inverter, are taken into consideration in the new equivalent model. These important parasitic components include the linear gate-to-drain capacitance, the nonlinear drain-to-source capacitance, the body diode, etc. The efficient simulation is realized by generalizing the extended impedance method (EIM) to cope with the nonlinearity and multiple-sources problems. Both comparisons to the experimental result and PSpice time-domain simulation show the capability and efficiency of this EIM based solution towards the steady-state simulation of general class-E resonant inverter circuit.
关键词	Logic gates Impedance MOSFET Capacitance Integrated circuit modeling Resonant inverters Resistance
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
会议地点	Kaohsiung
会议日期	3-7 June 2017
URL	查看原文
收录类别	CPCI ; EI
语种	英语
资助项目	ShanghaiTech University[F-0203-13-003]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000426696300034
出版者	IEEE
EI入藏号	20174704419357
EI主题词	Capacitance ; Frequency domain analysis ; MOSFET devices ; SPICE ; Time domain analysis
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Mathematics:921 ; Mathematical Transformations:921.3
原始文献类型	Proceedings Paper
来源库	IEEE
引用统计	正在获取...
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/13281
专题	生命科学与技术学院_博士生信息科学与技术学院_PI研究组_梁俊睿组信息科学与技术学院_硕士生
通讯作者	Liang, Junrui
作者单位	ShanghaiTech Univ, Sch Informaiton Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China
第一作者单位	上海科技大学
通讯作者单位	上海科技大学
第一作者的第一单位	上海科技大学
推荐引用方式 GB/T 7714	Liang, Junrui,Zhang, Shuai. An Efficient Steady-State Simulation of Class-E Resonant Inverter Considering MOSFET Parasitic Components by Using Extended Impedance Method[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2017:190-195.