Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates

doi:10.1109/TED.2020.3012422

	Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates
	Yuliang Zhang1,2,3 ; Xu Zhang 4; Min Zhu1,2,3 ; Jiaxiang Chen1,2,3 ; Chak Wah Tang 4; Kei May Lau 4; Xinbo Zou1
	2020-10-01
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.9[JCR-2023],2.9[5-Year])
ISSN	1557-9646
卷号	67 期号:10 页码:3992-3998
发表状态	已发表
DOI	10.1109/TED.2020.3012422
摘要	This article reports trap-related forward conduction instability of GaN quasi-vertical p-i-n diodes grown on a Si substrate. Three hole traps with activation energies of 0.38, 0.60, and 0.70 eV together with one electron trap with an energy level of 0.26 eV under the conduction band were revealed by deep-level transient spectroscopy (DLTS). Pulsed I-V measurements were performed on a device whose traps were prefilled. The rest time durations and OFF-state bias levels and periods were varied to investigate the forward I-V recovery phenomenon, which was highly correlated with the carrier detrapping process inside the device. The detrapping process could be greatly accelerated by a reverse bias or a lifted temperature. An “on-the-fly” resistance characterization was carried out to study the time-dependent carrier release process using short positive voltage pulses. The device was further submitted to switch-on transient assessment to investigate the time resolved dynamic RON evolution. The initial dynamic RON ratio was proportional to the reverse bias level and duration and was gradually decreased after continuous carrier injection until the trapping effects were overwhelmed. With a forward voltage slightly higher than the threshold voltage, it took dozens of milliseconds for the dynamic RON to be equal to its static counterpart. It was found that at 350 K, the ON-resistance ratio could reach unit more rapidly than the room temperature case, indicating mitigation of current collapse of p-i-n diodes and their great potential for high-temperature switching applications.
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收录类别	SCI ; SCIE ; EI
来源库	IEEE
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/123505
专题	信息科学与技术学院信息科学与技术学院_PI研究组_邹新波组信息科学与技术学院_硕士生信息科学与技术学院_博士生
作者单位	1.SIST, Shanghaitech University, Shanghai, China 2.Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, Shanghai, China 3.University of Chinese Academy of Sciences, Beijing, China 4.ECE Department, Hong Kong University of Science and Technology, Hong Kong
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Yuliang Zhang,Xu Zhang,Min Zhu,et al. Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2020,67(10):3992-3998.
APA	Yuliang Zhang.,Xu Zhang.,Min Zhu.,Jiaxiang Chen.,Chak Wah Tang.,...&Xinbo Zou.(2020).Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates.IEEE TRANSACTIONS ON ELECTRON DEVICES,67(10),3992-3998.
MLA	Yuliang Zhang,et al."Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates".IEEE TRANSACTIONS ON ELECTRON DEVICES 67.10(2020):3992-3998.