KMS
(本次检索基于用户作品认领结果)

浏览/检索结果: 共84条,第1-10条 帮助

限定条件        
已选(0)清除 条数/页:   排序方式:
Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications 期刊论文
SOLID-STATE ELECTRONICS, 2025, 卷号: 227
作者:  Guo, Haowen;  Ye, Wenbo;  Zhou, Junmin;  Gu, Yitian;  Gao, Han
Adobe PDF(4152Kb)  |  收藏  |  浏览/下载:22/1  |  提交时间:2025/05/12
Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:  Yitai zhu;  Haitao Du;  Yu Zhang;  Haolan Qu;  Haodong Jiang
Microsoft Word(2182Kb)  |  收藏  |  浏览/下载:87/1  |  提交时间:2025/03/07
氧化镓异质衬底集成技术研究进展 期刊论文
人工晶体学报, 2025, 卷号: 54, 期号: 03, 页码: 470-490
作者:  瞿振宇;  徐文慧
Adobe PDF(1960Kb)  |  收藏  |  浏览/下载:21/3  |  提交时间:2025/04/25
Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Multi-Vth Power Device Platform for All-GaN Monolithic Integration 会议论文
INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS
作者:  
Adobe PDF(1101Kb)  |  收藏  |  浏览/下载:76/4  |  提交时间:2025/03/03
Effect of 5 MeV proton irradiation on electrical and trap characteristics of β-Ga2O3 power diode 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 卷号: 187
作者:  Qu, Haolan;  Huang, Wei;  Zhang, Yu;  Sui, Jin;  Yang, Ge
Adobe PDF(6465Kb)  |  收藏  |  浏览/下载:323/4  |  提交时间:2024/11/29
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(1674Kb)  |  收藏  |  浏览/下载:78/4  |  提交时间:2025/02/12
Nonlinear Characteristics Analysis of GaN p-i-n Diodes at Room and Low Temperature 会议论文
2024 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), Nanjing, China, 9-11 Nov. 2024
作者:  Junyuan Hu;  Yonghao Jia;  Xinbo Zou;  Wei-Bing Lu
Adobe PDF(839Kb)  |  收藏  |  浏览/下载:34/1  |  提交时间:2025/04/28
1.48 dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Neutralized Ion Beam Etching for LNA Applications 会议论文
THE 11TH ASIA-PACIFIC WORKSHOP ON WIDEGAP SEMICONDUCTORS, Busan, Korea, October 13-17, 2024
作者:  Wenbo Ye;  Junmin Zhou;  Han Gao;  Haowen Guo;  Yitian Gu
Adobe PDF(197Kb)  |  收藏  |  浏览/下载:35/0  |  提交时间:2025/04/02
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:  Zhu, Junyan;  Ding, Jihong
Adobe PDF(2565Kb)  |  收藏  |  浏览/下载:268/1  |  提交时间:2024/10/08
ZrO2/β-Ga2O3 MOS器件的界面态和体陷阱物性研究 会议论文
第一届氧化镓技术与产业研讨会
作者:  陈嘉祥;  屈昊岚;  睢金;  卢星;  邹新波
收藏  |  浏览/下载:42/0  |  提交时间:2025/04/02
  • 首页
  • 上一页
  • 1
  • 2
  • 3
  • 4
  • 5
  • 6
  • 7
  • 8
  • 9
  • 下一页
  • 末页