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Understanding the mechanism of plasma etching of carbon-doped GeSbTe phase change material 期刊论文
APPLIED SURFACE SCIENCE, 2024, 卷号: 671
作者:  Liu, Jin;  Zhang, Jiarui;  Wan, Ziqi;  Chen, Yuqing;  Zheng, Jia
Adobe PDF(2695Kb)  |  收藏  |  浏览/下载：449/4  |  提交时间：2024/08/09
300 mm integration of a scalable phase change material spacer by inductively coupled plasma etching 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 卷号: 164
作者:  Fang, Wencheng;  Zheng, Jia;  Zhang, Jiarui;  Li, Chengxing;  Wang, Ruobing
Adobe PDF(9718Kb)  |  收藏  |  浏览/下载：299/1  |  提交时间：2023/07/07
A Streaming Data Processing Architecture Based on Lookup Tables 期刊论文
ELECTRONICS, 2023, 卷号: 12, 期号: 12
作者:  Yuemaier, Aximu;  Chen, Xiaogang;  Qian, Xingyu;  Dai, Weibang;  Li, Shunfen
Adobe PDF(485Kb)  |  收藏  |  浏览/下载：526/166  |  提交时间：2023/07/11
Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application 期刊论文
NANOMATERIALS, 2023, 卷号: 13, 期号: 6
作者:  Zhang, Jiarui;  Fang, Wencheng;  Wang, Ruobing;  Li, Chengxing;  Zheng, Jia
Adobe PDF(6523Kb)  |  收藏  |  浏览/下载：955/287  |  提交时间：2023/04/19
Read Optimization Enables Ultralow Resistance Drift for Phase Change Memory 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 卷号: 69, 期号: 10, 页码: 5536-5541
作者:  Chen, Cheng;  Li, Xi;  Xie, Chenchen;  Chen, Houpeng;  Xu, Siqiu
Adobe PDF(5403Kb)  |  收藏  |  浏览/下载：291/1  |  提交时间：2022/08/19
Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application 期刊论文
MATERIALS RESEARCH BULLETIN, 2022, 卷号: 149
作者:  Fang, Wencheng;  Song, Sannian;  Zhao, Jin;  Li, Chengxing;  Cai, Daolin
Adobe PDF(4043Kb)  |  收藏  |  浏览/下载：283/0  |  提交时间：2022/01/28
High performance of Er-doped Sb2Te material used in phase change memory 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 卷号: 889
作者:  Zhao, Jin;  Yuan, Zhenhui;  Song, Wen-Xiong;  Song, Zhitang
Adobe PDF(5720Kb)  |  收藏  |  浏览/下载：383/0  |  提交时间：2021/12/17
High Thermal Stability and Fast Speed Phase Change Memory by Optimizing GeTe Alloys with Ru Doping 期刊论文
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 卷号: 10, 期号: 5
作者:  Xu, Yongkang;  Song, Sannian;  Yuan, Zhenhui;  Zhao, Jin;  Song, Zhitang
Adobe PDF(1204Kb)  |  收藏  |  浏览/下载：245/3  |  提交时间：2021/06/11
High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films 期刊论文
MATERIALS LETTERS, 2020, 卷号: 278
作者:  Wang, Ruobing;  Shen, Jiabin;  Chen, Xin;  Wang, Hao;  Song, Sannian
Adobe PDF(727Kb)  |  收藏  |  浏览/下载：283/2  |  提交时间：2020/11/02
RESET current optimization for phase change memory based on the sub-threshold slope 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 卷号: 97, 页码: 11-16
作者:  Wu, Lei;  Chen, Yi-Feng;  Cai, Dao-Lin;  Lu, Yao-Yao;  Guo, Tian-Qi
Adobe PDF(1536Kb)  |  收藏  |  浏览/下载：504/7  |  提交时间：2019/05/05
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