High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films

doi:10.1016/j.matlet.2020.128402

	High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films
	Wang, Ruobing 1,2; Shen, Jiabin 1,2; Chen, Xin1,3 ; Wang, Hao 1,4; Song, Sannian 1; Song, Zhitang 1
	2020-11-01
发表期刊	MATERIALS LETTERS (IF:2.7[JCR-2023],2.7[5-Year])
ISSN	0167-577X
卷号	278
发表状态	已发表
DOI	10.1016/j.matlet.2020.128402
摘要	Ge2Sb2Te5 (GST) materials have been widely investigated for applying in phase-change memory (PCM). However, the low amorphous thermal properties limit its application in high-density memory devices, thus doping modified has been the subject of extensive studies in past decades. In this work, the amorphous thermal stability of GST can be significantly improved by doping hafnium elements without reducing operation speed. A higher crystallization temperature (similar to 221 degrees C) and 10-year data retention temperature (similar to 114 degrees C) are achieved in Hf-0.04(Ge2Sb2Te5)(0.96) alloy. The addition of Hf elements helps to suppress crystallization and decrease the grain size of rock-salt phase. Besides, the PCM cell based on Hf-0.04(Ge2Sb2Te5)(0.96) exhibits a faster operation speed (10 ns) than GST-based one and could be operated repeatedly for over 210(5) cycles, showing that Hf-doped GST is a promising material for PCM devices. (C) 2020 Elsevier B.V. All rights reserved.
关键词	Phase-change memory Hafnium Thermal stability Electrical properties Nanocomposites
收录类别	SCI ; SCIE ; EI
资助项目	National Basic Research Program of China (973 Program)[2017YFA0206101]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000569781200016
出版者	ELSEVIER
EI入藏号	20203209024265
EI主题词	Phase change materials ; Refuse digestion ; Semiconductor doping ; Thermodynamic stability
EI分类号	Municipal and Industrial Wastes ; Waste Treatment and Disposal:452 ; Thermodynamics:641.1 ; Semiconducting Materials:712.1 ; Data Storage, Equipment and Techniques:722.1
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/123479
专题	物质科学与技术学院_博士生
通讯作者	Song, Sannian
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China; 2.Univ Chinese Acad Sci, Beijing 100080, Peoples R China; 3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China; 4.Shanghai Normal Univ, Coll Chem & Mat Sci, Shanghai 200234, Peoples R China
推荐引用方式 GB/T 7714	Wang, Ruobing,Shen, Jiabin,Chen, Xin,et al. High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films[J]. MATERIALS LETTERS,2020,278.
APA	Wang, Ruobing,Shen, Jiabin,Chen, Xin,Wang, Hao,Song, Sannian,&Song, Zhitang.(2020).High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films.MATERIALS LETTERS,278.
MLA	Wang, Ruobing,et al."High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films".MATERIALS LETTERS 278(2020).