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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
Microsoft Word(2182Kb)
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浏览/下载:87/1
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提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
A Visible Light-Responsive TiO2 Photocathode Achieved by a Rh Dopant
期刊论文
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2024, 卷号: 15, 期号: 23, 页码: 6166-6173
作者:
Tang, Yecheng
;
Liu, Kaiwei
;
Zhang, Jiaming
;
Wang, Jiaming
;
Wang, Haifeng
Adobe PDF(6169Kb)
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浏览/下载:209/2
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提交时间:2024/06/21
Electrochemistry
Light absorption
Oxide minerals
Semiconductor doping
Solar energy
Solar energy conversion
Titanium dioxide
N-type semiconductors
Onset potential
P-type
Photoelectrochemicals
Reversible hydrogen electrodes
Rh-doping
Rutile TiO 2
Solar water splitting
Visible light absorption
Visible-light-responsive
Demonstration of acousto-optical modulation based on a thin-film AlScN photonic platform
期刊论文
PHOTONICS RESEARCH, 2024, 卷号: 12, 期号: 6, 页码: 1138-1149
作者:
Bian, Kewei
;
Li, Zhenyu
;
Liu, Yushuai
;
Xu, Sumei
;
Zhao, Xingyan
Adobe PDF(2215Kb)
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浏览/下载:353/4
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提交时间:2024/06/21
Acoustic waves
Aluminum nitride
CMOS integrated circuits
Light modulation
MOS devices
Optical signal processing
Oxide semiconductors
Scandium
Scandium compounds
Thick films
Thin film circuits
Acousto-optic modulations
Acousto-optic modulator
Complementary metal-oxide-semiconductor technologies
Fabrication process
Microwave signal processing
Modulation technologies
On chips
Optical signal-processing
Piezoelectric property
Thin-films
Ultra-compact and high-performance suspended aluminum scandium nitride Lamb wave humidity sensor with a graphene oxide layer
期刊论文
NANOSCALE, 2024, 卷号: 16, 期号: 21
作者:
Luo, Zhifang
;
Li, Dongxiao
;
Le, Xianhao
;
He, Tianyiyi
;
Shao, Shuai
Adobe PDF(2961Kb)
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浏览/下载:340/4
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提交时间:2024/05/11
Acoustic surface wave devices
Acoustic waves
Aluminum nitride
Electromechanical devices
Graphene
III-V semiconductors
MEMS
MOS devices
Nitrides
Oxide semiconductors
'current
Aluminium-scandium
Complementary metal oxide semiconductor process
Graphene oxides
Low sensitivity
Microelectromechanical-systems technologies
Oxide layer
Performance
Sensing areas
Sensor limits
Orienting Charge Migration in TiO2 Photocathode through Directionally Distributed Rh Dopant
期刊论文
ACS MATERIALS LETTERS, 2024, 卷号: 6, 期号: 4, 页码: 1522-1531
作者:
Liu, Meng
;
Zhang, Jifang
;
Liu, Kaiwei
;
Nie, Zhiwei
;
Hu, Kejing
Adobe PDF(4119Kb)
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浏览/下载:336/5
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提交时间:2024/04/12
Oxide minerals
Semiconductor doping
Spectroelectrochemistry
Substrates
Titanium dioxide
Built-in-potential
Charge migration
Conductive substrates
Particle engineering
Particle surface
Photo-anodes
Photoelectrode
Rutile TiO 2
Space charge layers
Surfaces reconstruction
Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors
期刊论文
JOURNAL OF APPLIED PHYSICS, 2024, 卷号: 135, 期号: 8
作者:
Chen, Jiaxiang
;
Qu, Haolan
;
Sui, Jin
;
Lu, Xing
;
Zou, Xinbo
Adobe PDF(3256Kb)
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浏览/下载:422/53
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提交时间:2024/03/22
Atomic layer deposition
Capacitance
Electric fields
Gallium compounds
MOS capacitors
Oxide semiconductors
Transistors
Zirconia
Atomic layer deposited
Bulk traps
Comprehensive analysis
Device instabilities
Emission behavior
Forward bias
Interfaces state
Metal-oxide semiconductor devices
Metal-oxide- semiconductorcapacitors
Relaxation kinetics
Activating p-type conduction and visible transparency in delafossite CuAlO2 films: The critical role of the copper valence state transition
期刊论文
MATERIALS TODAY PHYSICS, 2024, 卷号: 40
作者:
Liu, Kaisen
;
Wei, Jingxuan
;
Meng, Lin
;
Han, Dongyang
;
Chen, Li
Adobe PDF(4818Kb)
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浏览/下载:301/0
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提交时间:2024/01/05
Aluminum compounds
Chemical activation
Copper
Crystallinity
Heterojunctions
Oxide semiconductors
Sapphire
Semiconductor diodes
Silicon carbide
Substrates
Transparency
Wide band gap semiconductors
Delafossites
Electronics devices
Localised
P type conductivity
P-Type conduction
P-type oxide semiconductors
Performance
Valence state
Valence state transitions
Visible transparencies
Interband carrier recombination mechanism in Al-doped ZnO
期刊论文
JOURNAL OF PHYSICS D: APPLIED PHYSICS, 2023, 卷号: 56, 期号: 40
作者:
Chen, Conglong
;
Yu, Junxiao
;
Lv, Zefang
;
Zhang, Fengling
;
Wang, Kuidong
Adobe PDF(1789Kb)
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浏览/下载:360/1
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提交时间:2023/08/11
Aluminum compounds
Electron-phonon interactions
Electrons
II-VI semiconductors
Magnetic semiconductors
Oxide semiconductors
Photoconductivity
Semiconducting zinc compounds
Wide band gap semiconductors
Zinc oxide
Al-doped ZnO
Carrier dynamics
Carrier recombination
Doped semiconductors
Heavily doped
Heavily doped semiconductor
Interband
Recombination mechanisms
Semiconductor photoconductive switch
Ultrafast response
Rhodium-Doped Barium Titanate Perovskite as a Stable p-Type Photocathode in Solar Water Splitting
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2023, 卷号: 15, 期号: 40, 页码: 47754-47763
作者:
Shi, Ke
;
Zhang, Boyang
;
Liu, Kaiwei
;
Zhang, Jifang
;
Ma, Guijun
Adobe PDF(4689Kb)
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浏览/下载:321/1
|
提交时间:2023/10/23
Rh-doped BaTiO3
oxide semiconductor
surface photovoltage spectroscopy (SPS)
p-n-conjugatedphotoelectrochemical (PEC) system
overall water splitting
Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 卷号: PP, 期号: 99, 页码: 5590-5595
作者:
Yu Zhang
;
Yitian Gu
;
Jiaxiang Chen
;
Yitai Zhu
;
Baile Chen
Adobe PDF(1973Kb)
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浏览/下载:203/1
|
提交时间:2023/10/07
Dynamic ON-resistance ( $\textit{R}_{\biosc{on}}$ )
GaN
metal–oxide–semiconductor high-electron mobility transistor (MOSHEMT)
threshold voltage ( $\textit{V}_{\text{th}}$ ) instability
ZrOTEXPRESERVE13 dielectric
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