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	Effect of As2 flux on the growth of InAs/InGaAs dot-in-well structure by molecular beam epitaxy 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2025, 卷号: 663 作者: Liu, Ruo-Tao; Wang, Kun; Wu, Jian-Chu; Yang, Chen; Huang, Hua Adobe PDF(5150Kb) \| 收藏 \| 浏览/下载：5/1 \| 提交时间：2025/05/06 InAs quantum dot Dot-in-well structure Arsenic flux Molecular beam epitaxy
	Phase Modulation of 2D Semiconducting GaTe from Hexagonal to Monoclinic through Layer Thickness Control and Strain Engineering 期刊论文 NANO LETTERS, 2025 作者: Quan, Wenzhi; Wu, Xinyan; Cheng, Yujin; Lu, Yue; Wu, Qilong Adobe PDF(8322Kb) \| 收藏 \| 浏览/下载：9/2 \| 提交时间：2025/04/28 phase engineering GaTe scanning tunnelingmicroscopy/spectroscopy molecular beam epitaxy III-VI semiconductors
	Controllable magnetism and an anomalous Hall effect in (Bi_1-xSb_x)₂Te₃-intercalated MnBi₂Te₄ multilayers 期刊论文 NANOSCALE, 2025, 卷号: 17, 期号: 11, 页码: 6562-6569 作者: Chen, Peng; Liu, Jieyi; Zhang, Yifan; Huang, Puyang; Bollard, Jack Adobe PDF(2091Kb) \| 收藏 \| 浏览/下载：75/2 \| 提交时间：2025/03/03 Antiferromagnetic materials - Antiferromagnetism - Bismuth compounds - Ferromagnetic materials - III-V semiconductors - Nanocrystals - Quantum Hall effect - Topological insulators Anomalous hall effects - Electrical characterization - Insertion layers - Magnetic characterization - Magnetic interlayers - Magneto-transport response - Molecular-beam epitaxy - Property - Spacer layer - Topological insulators
	Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures 期刊论文 APPLIED PHYSICS LETTERS, 2025, 卷号: 126, 期号: 1 作者: Zhi, Zhenghang; Wu, Yuyang; Ruan, Hanzhi; Liu, Jiuming; Huang, Puyang Adobe PDF(2896Kb) \| 收藏 \| 浏览/下载：108/9 \| 提交时间：2025/02/12 Cadmium alloys Cadmium telluride Gallium phosphide Heterodyning Heterojunctions Indium phosphide Narrow band gap semiconductors Selenium compounds Semiconducting aluminum compounds Semiconducting antimony compounds Semiconducting cadmium compounds Semiconducting gallium compounds Semiconducting indium phosphide Semiconductor quantum wells Silicon compounds Spin orbit coupling Spintronics Band bendings CdTe Molecular-beam epitaxy Quantum confinement effects Quantum-well heterostructure Rashba spin-orbit coupling Rashba-type spin-orbit Spin-orbit couplings Tunables Two-dimensional
	Realization of Honeycomb Tellurene with Topological Edge States 期刊论文 NANO LETTERS, 2024, 卷号: 24, 期号: 30, 页码: 9296-9301 作者: Liu, Jianzhong; Jiang, Qi; Huang, Benrui; Han, Xiaowen; Lu, Xiangle Adobe PDF(6686Kb) \| 收藏 \| 浏览/下载：321/5 \| 提交时间：2024/08/09 Molecular beam epitaxy Photoelectron spectroscopy Quantum Hall effect Quantum theory Scanning tunneling microscopy Spin Hall effect Tellurium compounds Topology Angle resolved photoemission spectroscopy Dirac point Edge state Gap opening Honeycomb lattices Quantum Spin hall effect Scanning tunneling microscopy/spectroscopy Spin-orbit couplings Tellurene Two-dimensional
	Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films 期刊论文 JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS, 2024, 卷号: 42, 期号: 3 作者: Ding, Jianyang; Liu, Zhengtai; Liu, Jiayu; Yuan, Jian; Wei, Liyang Adobe PDF(3333Kb) \| 收藏 \| 浏览/下载：1437/54 \| 提交时间：2024/04/12 Bandwidth Electron correlations Electronic structure Electrons Molecular beam epitaxy Oxide films Perovskite solar cells Photoelectron spectroscopy Thin films Dirac electrons Dirac fermions Electronic.structure Epitaxial thin films High quality Mott transitions Relativistics Spin-orbit couplings Strain induced Thin-films
	Correlation between MBE deoxidation conditions and InGaAs/InP APD performance 期刊论文 HONGWAI YU HAOMIBO XUEBAO/JOURNAL OF INFRARED AND MILLIMETER WAVES, 2024, 卷号: 43, 期号: 1, 页码: 63-69 作者: Guo, Zi-Lu; Wang, Wen-Juan; Qu, Hui-Dan; Fan, Liu-Yan; Zhu, Yi-Cheng Adobe PDF(6878Kb) \| 收藏 \| 浏览/下载：268/3 \| 提交时间：2024/02/23 Carrier concentration Heterojunctions III-V semiconductors Indium phosphide Infrared devices Molecular beams Optoelectronic devices Point defects Semiconducting indium Semiconducting indium gallium arsenide Semiconducting indium phosphide Semiconductor alloys Semiconductor quantum dots Substrates Condition Deoxidation Hetero-interfaces Heterointerface diffusion High sensitivity InGaAs/InP avalanche photodiodes InP substrates Molecular-beam epitaxy P/as exchange Performance
	Spontaneous Line Defect-Induced Co4Te7 Superlattices on SrTiO3(001) Featuring Flat Bands 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2024, 卷号: 34, 期号: 29 作者: Quan, Wenzhi; Lu, Yue; Wu, Qilong; Shang, Chanjuan; Li, Chenyu Adobe PDF(8780Kb) \| 收藏 \| 浏览/下载：275/2 \| 提交时间：2024/04/12 Defects Density functional theory Electronic properties Molecular beams Monolayers Scanning tunneling microscopy Strontium titanates Substrates Tellurium Tellurium compounds Titanium compounds 1-D structures 1d structure/pattern Defect arrays Defects induced Flat band Line defects Luttinger liquids Moire pattern Molecular-beam epitaxy Scanning tunneling microscopy/spectroscopy
	Substantial Energy Band Modulation of Semiconducting Hexagonal GaTe Quantum Wells by Layer Thickness and Mirror Twin Boundaries 期刊论文 ACS NANO, 2024, 卷号: 18, 期号: 31, 页码: 20591-20599 作者: Quan, Wenzhi; Lu, Yue; Wu, Qilong; Cheng, Yujin; Hu, Jingyi Adobe PDF(8504Kb) \| 收藏 \| 浏览/下载：245/3 \| 提交时间：2024/08/09 Defects Density functional theory Electronic properties Energy gap Mirrors Molecular beams Quantum theory Scanning tunneling microscopy Semiconductor doping Semiconductor quantum wells Van der Waals forces Hexagonal gate Mirror twin boundary Molecular-beam epitaxy Quantum-well state Quantum-wells Scanning tunneling microscopy/spectroscopy Substantial energy Twin boundaries Ultra-thin Van der Waal
	Impact of nitrogen annealing on the electrical properties of HgCdTe epitaxial films 期刊论文 MATERIALS RESEARCH EXPRESS, 2023, 卷号: 10, 期号: 7 作者: Jin, Dapeng; Zhou, Songmin; Chen, Lu; Lin, Chun; He, Li Adobe PDF(1365Kb) \| 收藏 \| 浏览/下载：444/146 \| 提交时间：2023/08/11 Activation energy Annealing Cadmium telluride Carrier concentration Carrier mobility Equilibrium constants Mercury (metal) Mercury amalgams Mercury compounds Molecular beam epitaxy Nitrogen Passivation Semiconductor alloys Annealing temperatures Annealing time Cooling process Equilibrium value HgCdTe materials Mobility Molecular-beam epitaxy Nitrogen annealing Passivation layer Temperature annealing

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