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Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films | |
2024-05-01 | |
发表期刊 | JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS (IF:2.4[JCR-2023],2.6[5-Year]) |
ISSN | 0734-2101 |
EISSN | 1520-8559 |
卷号 | 42期号:3 |
DOI | 10.1116/6.0003462 |
摘要 | Perovskite CaIrO 3 is theoretically predicted to be a Dirac node semimetal near the Mott transition, which possesses a considerable interplay between electron correlations and spin-orbit coupling. Electron correlations can significantly tune the behavior of relativistic Dirac fermions. Here, we have grown high-quality perovskite CaIrO 3 thin films on different substrates using oxide molecular beam epitaxy to modulate both electron correlations and Dirac electron states. Through in situ angle-resolved photoemission spectroscopy, we demonstrate a systematic evolution of the bandwidth and effective mass of J eff = 1 / 2 band in perovskite CaIrO 3 induced by strain. The bandwidth of the J eff = 1 / 2 band undergoes an evident increase under in-plane compressive strain, which could be attributed to the weakening of electron correlations. The compressive strain can potentially shift the position of the Dirac node relative to the Fermi level and play a vital role in the transition from hole-type to electron-type transport characteristics. Our work provides a feasible approach for manipulating the topological Dirac electron states by engineering the strength of electron correlations. © 2024 Author(s). |
关键词 | Bandwidth Electron correlations Electronic structure Electrons Molecular beam epitaxy Oxide films Perovskite solar cells Photoelectron spectroscopy Thin films Dirac electrons Dirac fermions Electronic.structure Epitaxial thin films High quality Mott transitions Relativistics Spin-orbit couplings Strain induced Thin-films |
URL | 查看原文 |
收录类别 | EI |
语种 | 英语 |
出版者 | AVS Science and Technology Society |
EI入藏号 | 20241315817979 |
EI主题词 | Perovskite |
EI分类号 | 482.2 Minerals ; 702.3 Solar Cells ; 716.1 Information Theory and Signal Processing ; 931.3 Atomic and Molecular Physics ; 933.1.2 Crystal Growth |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/359918 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_郭艳峰组 物质科学与技术学院_本科生 物质科学与技术学院_博士生 |
作者单位 | 1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai; 200050, China; 2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China; 3.Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201210, China; 4.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 5.National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei; 230026, China; 6.Laboratory of Advanced Materials, State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai; 200438, China; 7.Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Anhui, Hefei; 230026, China |
推荐引用方式 GB/T 7714 | Ding, Jianyang,Liu, Zhengtai,Liu, Jiayu,et al. Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films[J]. JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS,2024,42(3). |
APA | Ding, Jianyang.,Liu, Zhengtai.,Liu, Jiayu.,Yuan, Jian.,Wei, Liyang.,...&Shen, Dawei.(2024).Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films.JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS,42(3). |
MLA | Ding, Jianyang,et al."Strain-induced modulation of electronic structure in correlated Dirac semimetal Pv-CaIrO3 epitaxial thin films".JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A: VACUUM, SURFACES AND FILMS 42.3(2024). |
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