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	Surface charge induced flat band splitting in kagome lattice CsTi3Bi5 期刊论文 PHYSICAL REVIEW B, 2025, 卷号: 111, 期号: 20 作者: Jing, Wenchuan; Liu, Zhengtai; Jiang, Zhicheng; Ma, Haiyang; Xia, Wei Adobe PDF(2286Kb) \| 收藏 \| 浏览/下载：21/1 \| 提交时间：2025/06/17 Cesium alloys Charge density waves Hole mobility Quantum interference devices Single crystals Superlattices Band splitting Charge-density-waves First principle calculations Flat band High-resolution angle-resolved photoemission spectroscopies Intrinsic electronics Kagome lattice Quantum phenomena Surface termination Van Hove singularities
	Local Detection of Enhanced Hot Electron Scattering in InSb/CdTe Heterostructure Interface 期刊论文 AMERICAN INSTITUTE OF PHYSICS ADVANCES‌‌, 2025, 卷号: 15, 期号: 5 作者: Xiaoxiao Ma; Zhenghang Zhi; Weijie Deng 浏览 \| Microsoft Word(1068Kb) \| 收藏 \| 浏览/下载：76/0 \| 提交时间：2025/04/16 Electron scattering Electron transport properties III-V semiconductors Indium arsenide Semiconducting cadmium telluride Semiconducting indium phosphide CdTe Effective mass Energy-band bending Heterojunction interfaces Heterostructure interfaces High electron mobility Nonreciprocal Rashba spin-orbit coupling Spin-orbit coupling effects Spintronics device
	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang 浏览 \| Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：102/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Sparse Graph Attention Network Based Signal Detection for OTFS System 会议论文 2025 IEEE WIRELESS COMMUNICATIONS AND NETWORKING CONFERENCE (WCNC), Milan, Italy, 24-27 March 2025 作者: Yulong Xu; Haiwei Shi; Jinglin Shi; Yiqing Zhou; Shuo Zhou Adobe PDF(568Kb) \| 收藏 \| 浏览/下载：141/1 \| 提交时间：2024/12/03 GNN Graph attention network-based OTFS detector High mobility Network-based Orthogonal time-frequency space detection Signal's detections Space detection Space systems Sparse graphs Time-frequency space
	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040 作者: Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu Adobe PDF(1674Kb) \| 收藏 \| 浏览/下载：90/5 \| 提交时间：2025/02/12 Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
	Large Nernst effect in a layered metallic antiferromagnet EuAl₂Si₂ 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 17 作者: Yang, Kunya; Xia, Wei; Mi, Xinrun; Zhang, Yiyue; Zhang, Long Adobe PDF(3262Kb) \| 收藏 \| 浏览/下载：1236/81 \| 提交时间：2024/11/04 Aluminum compounds Antiferromagnetism Europium alloys Europium compounds Fermi level Gallium compounds Thermoelectric refrigeration Thermoelectricity Antiferromagnets Electrons and holes High mobility Metallics Nernst effect Nernst signal Seebeck Single components Thermoelectric devices Thermoelectric generators
	Trapping mechanism transition of Î³-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13 作者: Zhu, Junyan; Ding, Jihong; Ouyang, Keqing; Zou, Xinbo; Ma, Hongping Adobe PDF(2565Kb) \| 收藏 \| 浏览/下载：294/2 \| 提交时间：2024/10/08 Aluminum gallium nitride Electron traps Gamma rays Gates (transistor) High electron mobility transistors Irradiation Junction gate field effect transistors Threshold voltage 'current AlGaN Gate stacks Mg-doping Total ionizing dose effects Trap density Trap state Trapping mechanisms Voltage swings Voltage-controlled
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: 24, 期号: 3, 页码: 358-364 作者: Yu Zhang; Renqiang Zhu; Haolan Qu; Yitian Gu; Huaxing Jiang Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：322/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET
	Reconfiguring the Optical Selection Rule in Ultramicrotome-Crafted Vertically Aligned InSe Ribbons 期刊论文 ADVANCED OPTICAL MATERIALS, 2024, 卷号: 12, 期号: 23 作者: Hu, Xin; Li, Zi-Han; Li, Zhen-Hui; Fu, Jie-Rui; Wang, Han Adobe PDF(3749Kb) \| 收藏 \| 浏览/下载：228/3 \| 提交时间：2024/05/24 Crystal orientation Electric fields Harmonic generation Indium compounds Light absorption Nonlinear optics Photoluminescence Selenium compounds Temperature Emission dipole High carrier mobility Indium selenide Light-matter interactions Optical path Optical sections Optical selection rules Optoelectronic applications Ultramicrotome Vertically aligned
	Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer 期刊论文 HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175 作者: Wang, Kaichu; Ding, Qingfeng; Zhou, Qi; Cai, Xinhang; Zhang, Jinfeng 收藏 \| 浏览/下载：289/0 \| 提交时间：2024/09/20 Aluminum gallium nitride Beam forming networks Channel estimation Chemical lasers Computer testing Direction of arrival Distributed feedback lasers Dye lasers Frequency estimation Gallium nitride Heterodyne detection Heterodyning Heterojunctions High electron mobility transistors Hydrogen masers Laser accessories Laser theory Liquid lasers Radiometers Temperature sensors Terahertz wave detectors Tetrodes Time difference of arrival AlGaN/GaN high electron mobility transistors Arrayed detector Coherent detection Directionof-arrival (DOA) Estimation of direction of arrival terahertz wave Field of views Heterodyne (coherent) detection Linear-array Tera Hertz Vector detection

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