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Enhanced catalytic performance in oxidative dehydrogenation of ethane
via
trace nickel oxide and boron nitride synergy
期刊论文
APPLIED CATALYSIS A-GENERAL, 2025, 卷号: 696
作者:
Zhong, Guohui
;
Cao, Lei
;
Wang, Xingzhi
;
Shang, Rongliang
;
Wu, Fan
Adobe PDF(5859Kb)
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浏览/下载:78/7
|
提交时间:2025/03/18
Hexagonal boron nitride
Nickel oxide
BOx overlayers
Synergistic effect
Oxidative dehydrogenation of ethane
Enhanced catalytic performance in oxidative dehydrogenation of ethane via trace nickel oxide and boron nitride synergy
期刊论文
APPLIED CATALYSIS A: GENERAL, 2025, 卷号: 696, 页码: 120197
作者:
Zhong GH(钟国辉)
;
Cao L(曹磊)
;
Wang XZ(王杏之)
;
Shang RL(商容梁)
;
Wu F(吴烦)
Adobe PDF(5852Kb)
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浏览/下载:127/18
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提交时间:2025/03/08
Boron nitride - Catalyst selectivity - Dehydrogenation - Metal nanoparticles - Nitrides
BOx overlayer - Catalytic performance - Ethylene production - Hexagonal boron nitride - High-reaction temperatures - NiO nanoparticles - Overlayers - Oxidative dehydrogenation of ethanes - Synergistic effect - ]+ catalyst
Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle-Resolved Photoemission Spectroscopy
期刊论文
ADVANCED SCIENCE, 2025
作者:
Xiao, Hanbo
;
Gao, Han
;
Li, Min
;
Chen, Fanqiang
;
Li, Qiao
Adobe PDF(1714Kb)
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浏览/下载:116/3
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提交时间:2025/02/12
Boron nitride
Graphene devices
Angle resolved photoemission spectroscopy
Band structure engineering
Bilayer Graphene
Displacement field
Electronics devices
Graphenes
Moire potential
NanoARPES with gating
Tunable Band-gap
Tunables
Ferroelectricity with concomitant Coulomb screening in van der Waals heterostructures
期刊论文
NATURE NANOTECHNOLOGY, 2025
作者:
Niu, Ruirui
;
Li, Zhuoxian
;
Han, Xiangyan
;
Qu, Zhuangzhuang
;
Liu, Qianling
Adobe PDF(1513Kb)
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浏览/下载:104/3
|
提交时间:2025/02/12
Boron nitride
Conductive materials
Coulomb blockade
Coulomb interactions
Gold compounds
Graphene devices
III-V semiconductors
Interfaces (materials)
Layered semiconductors
Molybdenum compounds
Monolayers
Multilayers
Organic superconducting materials
Single crystals
Superlattices
Tungsten compounds
Bilayer Graphene
Coulomb screening
Graphenes
Non-centrosymmetric
Non-polar
Stackings
Stringent requirement
Synaptic response
Topological currents
Van der Waal
Tandem indium oxide-boron nitride catalysts for oxidative dehydrogenation of propane
期刊论文
CHEMICAL COMMUNICATIONS, 2024, 卷号: 60, 期号: 96
作者:
Cao, Lei
;
Xu, Peng
;
Zhong, Guohui
;
Wu, Yifan
;
Wen, Sheng
Adobe PDF(1305Kb)
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浏览/下载:224/5
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提交时间:2024/11/28
Boron nitride
Dehydrogenation
III-V semiconductors
Atomic-layer deposition
Indium oxide
Modified catalysts
Nano-islands
Overlayers
Oxidative dehydrogenation-of-propane
Side reactions
]+ catalyst
Three-dimensional structure of buried heterointerfaces revealed by multislice ptychography
期刊论文
PHYSICAL REVIEW APPLIED, 2024, 卷号: 22, 期号: 1
作者:
O'Leary, Colum M.
;
Sha, Haozhi
;
Zhang, Jianhua
;
Su, Cong
;
Kahn, Salman
Adobe PDF(6102Kb)
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浏览/下载:396/3
|
提交时间:2024/08/09
Boron nitride
Color centers
Curve fitting
High resolution transmission electron microscopy
III-V semiconductors
Annular dark field scanning transmission electron microscopy
Depth resolution
Hetero-interfaces
Imaging modes
Incoherent imaging
Lateral resolution
Multi slices
Structure determination
Three dimensional (3D) structures
Three-dimensional structure
Selective and quasi-continuous switching of ferroelectric Chern insulator devices for neuromorphic computing
期刊论文
NATURE NANOTECHNOLOGY, 2024, 卷号: 19, 期号: 7, 页码: 962-969
作者:
Chen, Moyu
;
Xie, Yongqin
;
Cheng, Bin
;
Yang, Zaizheng
;
Li, Xin-Zhi
Adobe PDF(1801Kb)
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浏览/下载:275/1
|
提交时间:2024/07/22
Boron nitride
Ferroelectricity
Graphene
Quantum chemistry
Quantum theory
Topology
Computing devices
Computing technology
Edge state
Fault-tolerant computing
Ferroelectric state
Ferroelectric switching
Hall conductance
Insulating state
Neuromorphic computing
State based
Millimeter-Scale Exfoliation of hBN with Tunable Flake Thickness for Scalable Encapsulation
期刊论文
ACS APPLIED NANO MATERIALS, 2024, 卷号: 7, 期号: 6, 页码: 6574-6582
作者:
McKeown-Green, Amy S.
;
Zeng, Helen J.
;
Saunders, Ashley P.
;
Li, Jiayi
;
Shi, Jiaojian
Adobe PDF(4795Kb)
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浏览/下载:332/2
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提交时间:2024/03/22
Boron nitride
Crystallinity
Density functional theory
Film thickness
III-V semiconductors
Nitrides
Nonlinear optics
Selenium compounds
2d material
Hexagonal boron nitride
High demand
High-throughput
Macroscopic scale
Macroscopic scale production
Millimeter-scale
Top-down exfoliation
Topdown
Tunables
Revealing the interlayer orientations for bilayer graphene grown on hexagonal boron nitride by c-AFM measurement
期刊论文
CARBON, 2023, 卷号: 213
作者:
Chen, Lingxiu
;
Jiang, Chengxin
;
Zhang, Shuai
;
Chen, Chen
;
Wang, Dehe
Adobe PDF(5828Kb)
|
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|
浏览/下载:266/0
|
提交时间:2023/08/28
Twisted bilayer graphene
Hexagonal boron nitride
c-AFM
Interlayer orientation
Moire pattern
Increasing coverage of mono-layer graphene grown on hexagonal boron nitride
期刊论文
NANOTECHNOLOGY, 2023, 卷号: 34, 期号: 16
作者:
Jiang, Chengxin
;
Chen, Lingxiu
;
Wang, Huishan
;
Chen, Chen
;
Wang, Xiujun
Adobe PDF(824Kb)
|
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|
浏览/下载:548/0
|
提交时间:2023/03/10
Boron nitride
Esters
Graphene
III-V semiconductors
Nitrides
Nucleation
Organic polymers
Silicon carbide
Chemical vapour deposition
Coverage
Domain boundary
Domain size
Graphene films
Hexagonal boron nitride
Mono-layer
Nucleation growth
Property
Vertical growth
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