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Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle-Resolved Photoemission Spectroscopy | |
2025 | |
发表期刊 | ADVANCED SCIENCE (IF:14.3[JCR-2023],16.3[5-Year]) |
ISSN | 2198-3844 |
EISSN | 2198-3844 |
发表状态 | 已发表 |
DOI | 10.1002/advs.202412609 |
摘要 | Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, advanced spatial- and angle-resolved photoemission spectroscopy technique is employed to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials. The application of displacement field via in situ electrostatic gating introduces a sizable and tunable electronic bandgap, proportional to the field strength up to 100 meV. Meanwhile, the moiré potential, induced by aligning the underlying hexagonal boron nitride substrate, extends the bandgap by ≈20 meV. Theoretical calculations effectively capture the experimental observations. This investigation provides a quantitative understanding of how these two mechanisms collaboratively modulate the band gap in bilayer graphene, offering valuable guidance for the design of graphene-based electronic devices. © 2024 The Author(s). Advanced Science published by Wiley-VCH GmbH. |
关键词 | Boron nitride Graphene devices Angle resolved photoemission spectroscopy Band structure engineering Bilayer Graphene Displacement field Electronics devices Graphenes Moire potential NanoARPES with gating Tunable Band-gap Tunables |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[ |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
WOS类目 | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS记录号 | WOS:001402396000001 |
出版者 | John Wiley and Sons Inc |
EI入藏号 | 20250417747873 |
EI主题词 | Photoelectron spectroscopy |
EI分类号 | 1301.1.3.1 ; 714.2 Semiconductor Devices and Integrated Circuits ; 761 Nanotechnology ; 804.2 Inorganic Compounds |
原始文献类型 | Article in Press |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/483878 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_柳仲楷组 物质科学与技术学院_特聘教授组_陈宇林 物质科学与技术学院_博士生 物质科学与技术学院_公共科研平台_拓扑物理实验室 物质科学与技术学院_PI研究组_刘健鹏组 大科学中心_公共科研平台_大科学装置建设部 |
通讯作者 | Chen, Cheng; Cheng, Bin; Liu, Jianpeng; Liu, Zhongkai |
作者单位 | 1.School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 201210, China; 2.Nanjing National Laboratory of Solid State Microstructures, School of Physics, Institute of Brain-Inspired Intelligence, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing; 210093, China; 3.Institute for Advanced Studies, Wuhan University, Hubei, Wuhan; 430072, China; 4.Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai; 200240, China; 5.Center for Transformative Science, ShanghaiTech University, Shanghai; 201210, China; 6.Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201204, China; 7.State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing; 100084, China; 8.Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford; OX1 3PU, United Kingdom; 9.Institute of Interdisciplinary Physical Sciences School of Science, Nanjing University of Science and Technology, Nanjing; 210094, China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Xiao, Hanbo,Gao, Han,Li, Min,et al. Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle-Resolved Photoemission Spectroscopy[J]. ADVANCED SCIENCE,2025. |
APA | Xiao, Hanbo.,Gao, Han.,Li, Min.,Chen, Fanqiang.,Li, Qiao.,...&Liu, Zhongkai.(2025).Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle-Resolved Photoemission Spectroscopy.ADVANCED SCIENCE. |
MLA | Xiao, Hanbo,et al."Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle-Resolved Photoemission Spectroscopy".ADVANCED SCIENCE (2025). |
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