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	Pressure-regulated bandgap narrowing and photoelectric activity enhancement in layered halide compound GeI2 期刊论文 JOURNAL OF APPLIED PHYSICS, 2025, 卷号: 137, 期号: 8, 页码: 085902 作者: Li, Zhongyang; Wang, Yiming; Zeng, Xiaohui; Zhou, Shuo; Zhu, Zhikai Adobe PDF(3663Kb) \| 收藏 \| 浏览/下载：136/5 \| 提交时间：2025/03/14 Carrier concentration - Gallium compounds - Germanium alloys - Germanium oxides - Heterojunctions - Luminescent devices - Photodetectors - Photoelectricity - Semiconducting indium phosphide - Van der Waals forces - Wide band gap semiconductors Activity enhancement - Band gap narrowing - Halide compounds - Heterojunction devices - Light-matter interactions - Photoelectrics - Spectral response - Van Der Waals interactions - Weak interlayers - Wide-band-gap
	Silicon-integrated scandium-doped aluminum nitride electro-optic modulator 期刊论文 PHOTONICS RESEARCH, 2025, 卷号: 13, 期号: 2, 页码: 477-487 作者: Xu, Tianqi; Liu, Yushuai; Pu, Yuanmao; Yang, Yongxiang; Zhong, Qize Adobe PDF(1147Kb) \| 收藏 \| 浏览/下载：379/5 \| 提交时间：2024/06/24 Aluminum gallium nitride - Amplitude shift keying - CMOS integrated circuits - Digital filters - Electrooptical devices - Fiber optic sensors - Frequency shift keying - Indium phosphide - Light modulation - Light modulators - Notch filters - Phase shift keying - Photonic integrated circuits - Photonic integration technology - Ring lasers - Scandium compounds - Semiconducting aluminum compounds - Semiconducting indium phosphide - Signal modulation - Silicon nitride Electro-optic modulators - Electro-optics - Fabrication and characterizations - Functional devices - Hexagonal wurtzite structure - Nonlinear properties - Photonic circuits - Piezoelectric property - Seamless integration - Second orders
	Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures 期刊论文 APPLIED PHYSICS LETTERS, 2025, 卷号: 126, 期号: 1 作者: Zhi, Zhenghang; Wu, Yuyang; Ruan, Hanzhi; Liu, Jiuming; Huang, Puyang Adobe PDF(2896Kb) \| 收藏 \| 浏览/下载：107/9 \| 提交时间：2025/02/12 Cadmium alloys Cadmium telluride Gallium phosphide Heterodyning Heterojunctions Indium phosphide Narrow band gap semiconductors Selenium compounds Semiconducting aluminum compounds Semiconducting antimony compounds Semiconducting cadmium compounds Semiconducting gallium compounds Semiconducting indium phosphide Semiconductor quantum wells Silicon compounds Spin orbit coupling Spintronics Band bendings CdTe Molecular-beam epitaxy Quantum confinement effects Quantum-well heterostructure Rashba spin-orbit coupling Rashba-type spin-orbit Spin-orbit couplings Tunables Two-dimensional
	The impact of P-type doping level and profile on performance of InAs quantum dot lasers 期刊论文 JOURNAL OF APPLIED PHYSICS, 2024, 卷号: 136, 期号: 22 作者: Liu, Ruo-Tao; Du, An-Tian; Cao, Chun-Fang; Yang, Jin; Wu, Jian-Chu Adobe PDF(3215Kb) \| 收藏 \| 浏览/下载：215/4 \| 提交时间：2024/12/23 Aluminum arsenide Continuous wave lasers Gallium arsenide Gallium phosphide Indium antimonides Indium arsenide Indium phosphide Nanocrystals Photonic integrated circuits Photonic integration technology Q switched lasers Quantum dot lasers Semiconducting indium phosphide Semiconductor doping Semiconductor quantum dots System-on-chip Threshold current density Device performance Doping levels Doping profiles InAs quantum dots Output power P-type doping Performance Quantum-dot lasers Slope efficiencies Threshold-current density
	Field-Free Rashba-Type Crystal Torque MRAM with High Efficiency and Thermal Stability 会议论文 2024 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, CA, USA, 7-11 Dec. 2024 作者: Puyang Huang; Shan Yao; Aitian Chen; Zhenghang Zhi; Chenyi Fu Adobe PDF(1990Kb) \| 收藏 \| 浏览/下载：72/4 \| 提交时间：2025/03/03 Crystal symmetry Diluted magnetic semiconductors Dynamic random access storage Electromagnetic induction Magnetic core storage Magnetic recording Magnetic tape storage MRAM devices Semiconducting indium phosphide Static random access storage System-on-chip A-stable CdTe High thermal Higher efficiency Magnetic random access memory Metal systems Rashba spin-orbit coupling Spin orbits Switching scheme Write currents
	p-Type AgAuSe Quantum Dots 期刊论文 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2024, 卷号: 146, 期号: 46, 页码: 31799-31806 作者: Tang, Zhiyong; Wang, Zhixuan; Yang, Hongchao; Ma, Zhiwei; Zhang, Yejun Adobe PDF(7159Kb) \| 收藏 \| 浏览/下载：155/2 \| 提交时间：2024/11/28 Aluminum arsenide Atomic emission spectroscopy Gallium compounds Heterojunctions Mercury amalgams Nanocrystals Semiconducting indium phosphide Semiconductor doping Ultraviolet photoelectron spectroscopy X ray photoelectron spectroscopy Device application Doping strategies First principle calculations Level shift Metal free Optoelectronics devices P-type P/n homojunctions Toxic heavy metals X-ray photoelectrons
	Correlation between MBE deoxidation conditions and InGaAs/InP APD performance 期刊论文 HONGWAI YU HAOMIBO XUEBAO/JOURNAL OF INFRARED AND MILLIMETER WAVES, 2024, 卷号: 43, 期号: 1, 页码: 63-69 作者: Guo, Zi-Lu; Wang, Wen-Juan; Qu, Hui-Dan; Fan, Liu-Yan; Zhu, Yi-Cheng Adobe PDF(6878Kb) \| 收藏 \| 浏览/下载：265/3 \| 提交时间：2024/02/23 Carrier concentration Heterojunctions III-V semiconductors Indium phosphide Infrared devices Molecular beams Optoelectronic devices Point defects Semiconducting indium Semiconducting indium gallium arsenide Semiconducting indium phosphide Semiconductor alloys Semiconductor quantum dots Substrates Condition Deoxidation Hetero-interfaces Heterointerface diffusion High sensitivity InGaAs/InP avalanche photodiodes InP substrates Molecular-beam epitaxy P/as exchange Performance
	Longitudinal Piezoelectricity and Polarization-Insensitive Oxidation in Janus vdWs Nb3SeI7 期刊论文 SMALL, 2024, 卷号: 21, 期号: 2 作者: Wang, Jiapeng; Yuan, Xiaojia; Fang, Yuqiang; Chen, Xinfeng; Zhong, Zhengbo Adobe PDF(3513Kb) \| 收藏 \| 浏览/下载：214/3 \| 提交时间：2024/11/22 Defect density Exfoliation (materials science) Layered semiconductors Semiconducting indium phosphide Semiconducting selenium compounds Solar power generation Van der Waals forces Electrical polarization Harmonics generation Janus structure Out-of-plane Plane polarizations Polarization-insensitive Property Second harmonics Self-limiting oxidation Van der Waal
	Furan-Based HTCC/In2S3 Heterojunction Achieves Fast Charge Separation To Boost the Photocatalytic Generation of H2O2 in Pure Water 期刊论文 ACS CATALYSIS, 2024, 卷号: 14, 期号: 21, 页码: 16245-16255 作者: Tang, Xiaolong; Yu, Changlin; Zhang, Jiaming; Liu, Kaiwei; Zeng, Debin Adobe PDF(8739Kb) \| 收藏 \| 浏览/下载：151/2 \| 提交时间：2024/11/08 Bioremediation Carbonation Hydrogen bonds Oxygen reduction reaction Photocatalytic activity Reaction intermediates Semiconducting indium phosphide Carrier recombination Charge-separation Fast charges Hydrothermal carbonation carbon Hydrothermal carbonations Organic/inorganic heterojunctions Oxygen Reduction Oxygen reduction reaction Photo-catalytic Pure water
	High-speed InAlAs digital alloy avalanche photodiode 期刊论文 APPLIED PHYSICS LETTERS, 2023, 卷号: 123, 期号: 19 作者: Wang, Wenyang; Yao, Jinshan; Li, Linze; Ge, Huachen; Wang, Luyu Adobe PDF(4267Kb) \| 收藏 \| 浏览/下载：245/0 \| 提交时间：2023/12/12 Aluminum alloys Bandwidth Grading III-V semiconductors Indium phosphide Semiconducting indium phosphide Semiconductor alloys 1550 nm Avalanche breakdown Dark current densities Digital alloys Excess noise Gain-bandwidth products High Speed InP substrates Performance Random alloy

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