High-speed InAlAs digital alloy avalanche photodiode

doi:10.1063/5.0169935

	High-speed InAlAs digital alloy avalanche photodiode
	Wang, Wenyang1,2,3 ; Yao, Jinshan 4,5; Li, Linze1 ; Ge, Huachen1 ; Wang, Luyu1 ; Zhu, Liqi1 ; Chen, Qiushi1 ; Lu, Hong 4,5,6; Chen, Baile1,7
	2023-11-06
发表期刊	APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year])
ISSN	0003-6951
EISSN	1077-3118
卷号	123 期号:19
发表状态	已发表
DOI	10.1063/5.0169935
摘要	Digital alloy (DA) InAlAs on the InP substrate exhibits a lower excess noise compared to a traditional In0.52Al0.48As random alloy as the multiplication layer in avalanche photodiodes (APDs). This work implements DA InAlAs as the multiplication layer in a 1550 nm separate absorption, grading, charge, and multiplication APD and characterizes the performances through various analyses. The device reaches a maximum gain of 221 before avalanche breakdown, with a maximum gain-bandwidth product of more than 140 GHz. At 90% breakdown voltage, the dark current density is 4.1 mA/cm(2), and the responsivity is 0.48 A/W at unit gain. Excess noise factors were identified, yielding an effective k value of around 0.15, which is lower than that of random alloy In0.52Al0.48As APDs (k similar to 0.2). These findings show that DA InAlAs has the potential to be a promising material for high-performance APDs.
关键词	Aluminum alloys Bandwidth Grading III-V semiconductors Indium phosphide Semiconducting indium phosphide Semiconductor alloys 1550 nm Avalanche breakdown Dark current densities Digital alloys Excess noise Gain-bandwidth products High Speed InP substrates Performance Random alloy
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收录类别	SCI ; EI
语种	英语
资助项目	This work was supported in part by the National Key Research and Development Program of China under Grant No. 2019YFB2203400, in part by the National Natural Science Foundation of China under Grant No. 61975121, in part by the program B for Outstanding Ph.[2019YFB2203400] ; National Key Research and Development Program of China[61975121]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001099880200004
出版者	AIP Publishing
EI入藏号	20234615049520
EI主题词	Avalanche photodiodes
EI分类号	541.2 Aluminum Alloys ; 712.1 Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 716.1 Information Theory and Signal Processing ; 804.2 Inorganic Compounds
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/347852
专题	信息科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_硕士生信息科学与技术学院_博士生
通讯作者	Lu, Hong; Chen, Baile
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Nanjing Univ, Coll Engn & Appl Sci, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China 5.Nanjing Univ, Coll Engn & Appl Sci, Dept Mat Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China 6.Nanjing Univ, Jiangsu Key Lab Artificial Funct Mat, Nanjing 210093, Jiangsu, Peoples R China 7.Shanghai Engn Res Ctr Energy Efficient & Custom AI, Shanghai 201210, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Wang, Wenyang,Yao, Jinshan,Li, Linze,et al. High-speed InAlAs digital alloy avalanche photodiode[J]. APPLIED PHYSICS LETTERS,2023,123(19).
APA	Wang, Wenyang.,Yao, Jinshan.,Li, Linze.,Ge, Huachen.,Wang, Luyu.,...&Chen, Baile.(2023).High-speed InAlAs digital alloy avalanche photodiode.APPLIED PHYSICS LETTERS,123(19).
MLA	Wang, Wenyang,et al."High-speed InAlAs digital alloy avalanche photodiode".APPLIED PHYSICS LETTERS 123.19(2023).