消息
×
loading..
×
验证码:
换一张
忘记密码?
记住我
×
统一认证登录
登录
中文版
|
English
上海科技大学知识管理系统
ShanghaiTech University Knowledge Management System
统一认证登录
登录
注册
ALL
ORCID
题名
作者
发表日期
关键词
文献类型
DOI
出处
存缴日期
收录类别
出版者
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
知识整合
学习讨论厅
在结果中检索
研究单元&专题
信息科学与技术学院 [8]
物质科学与技术学院 [6]
材料器件中心 [1]
作者
陈佰乐 [4]
陆卫 [3]
郭子路 [2]
王文扬 [2]
葛华辰 [2]
杨辉 [1]
更多...
文献类型
期刊论文 [13]
会议论文 [1]
发表日期
2025 [3]
2024 [2]
2023 [3]
2022 [4]
2021 [1]
2017 [1]
更多...
出处
APPLIED PH... [1]
HONGWAI YU... [1]
IEEE TRANS... [1]
INFRARED P... [1]
JOURNAL OF... [1]
JOURNAL OF... [1]
更多...
语种
英语 [11]
中文 [3]
资助项目
National N... [2]
Foundation... [1]
Hangzhou K... [1]
National K... [1]
National K... [1]
National K... [1]
更多...
资助机构
收录类别
EI [11]
SCI [8]
SCIE [4]
CSCD [1]
北大核心 [1]
状态
已发表 [13]
×
知识图谱
KMS
反馈留言
浏览/检索结果:
共14条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
WOS被引频次升序
WOS被引频次降序
期刊影响因子升序
期刊影响因子降序
提交时间升序
提交时间降序
发表日期升序
发表日期降序
作者升序
作者降序
题名升序
题名降序
Photocarrier distribution in an InGaAs/InP avalanche photodiodes and its contribution to device performances
期刊论文
NANOSCALE, 2025
作者:
Cheng, Yue
;
Xin, Rui
;
Yu, Li
;
Mao, Feiyu
;
Li, Xiang
Adobe PDF(1688Kb)
|
收藏
|
浏览/下载:7/1
|
提交时间:2025/05/20
Photoemission
Semiconducting indium
Core region
Cross-sectional scanning
Device performance
InGaAs/InP avalanche photodiodes
Near-infrared wavelength
Optimal performance
Photo-carriers
Photoelectric property
Single-photon detectors
Wavelength ranges
High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers
期刊论文
SENSORS, 2025, 卷号: 25, 期号: 9
作者:
Yang, Guohao
;
Liu, Tianhong
;
Li, Jinping
;
Chen, Baile
;
Tong, Cunzhu
Adobe PDF(4382Kb)
|
收藏
|
浏览/下载:4/1
|
提交时间:2025/05/26
broadband
photodiode
graded bandgap layer
InGaAs/InP
Low noise low dark current AlAsSb/GaAsSb digital alloy avalanche photodiode
期刊论文
OPTICS EXPRESS, 2025, 卷号: 33, 期号: 5, 页码: 10591-10598
作者:
Ge, Huachen
;
Liang, Yan
;
Wang, Wenyang
;
Wang, Zihao
;
Zhu, Liqi
Adobe PDF(3532Kb)
|
收藏
|
浏览/下载:49/2
|
提交时间:2025/03/28
III-V semiconductors
Indium phosphide
'current
+GaAsSb
Dark current densities
Dark current noise
Digital alloys
InP
Lattice-matched
Low noise performance
Lower noise
Photodiode structures
MBE脱氧条件与InGaAs/InP APD性能的相关性(英文)
期刊论文
红外与毫米波学报, 2024, 卷号: 43, 期号: 01, 页码: 63-69
作者:
郭子路
;
王文娟
;
曲会丹
;
范柳燕
;
诸毅诚
Adobe PDF(1153Kb)
|
收藏
|
浏览/下载:188/2
|
提交时间:2024/08/09
分子束外延
P/As切换
异质界面扩散
InGaAs/InP雪崩光电二极管
Correlation between MBE deoxidation conditions and InGaAs/InP APD performance
期刊论文
HONGWAI YU HAOMIBO XUEBAO/JOURNAL OF INFRARED AND MILLIMETER WAVES, 2024, 卷号: 43, 期号: 1, 页码: 63-69
作者:
Guo, Zi-Lu
;
Wang, Wen-Juan
;
Qu, Hui-Dan
;
Fan, Liu-Yan
;
Zhu, Yi-Cheng
Adobe PDF(6878Kb)
|
收藏
|
浏览/下载:278/3
|
提交时间:2024/02/23
Carrier concentration
Heterojunctions
III-V semiconductors
Indium phosphide
Infrared devices
Molecular beams
Optoelectronic devices
Point defects
Semiconducting indium
Semiconducting indium gallium arsenide
Semiconducting indium phosphide
Semiconductor alloys
Semiconductor quantum dots
Substrates
Condition
Deoxidation
Hetero-interfaces
Heterointerface diffusion
High sensitivity
InGaAs/InP avalanche photodiodes
InP substrates
Molecular-beam epitaxy
P/as exchange
Performance
High-speed InAlAs digital alloy avalanche photodiode
期刊论文
APPLIED PHYSICS LETTERS, 2023, 卷号: 123, 期号: 19
作者:
Wang, Wenyang
;
Yao, Jinshan
;
Li, Linze
;
Ge, Huachen
;
Wang, Luyu
Adobe PDF(4267Kb)
|
收藏
|
浏览/下载:259/0
|
提交时间:2023/12/12
Aluminum alloys
Bandwidth
Grading
III-V semiconductors
Indium phosphide
Semiconducting indium phosphide
Semiconductor alloys
1550 nm
Avalanche breakdown
Dark current densities
Digital alloys
Excess noise
Gain-bandwidth products
High Speed
InP substrates
Performance
Random alloy
The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 卷号: 166
作者:
Zhu, Yicheng
;
Wang, Wenjuan
;
Zhou, Min
;
Qu, Huidan
;
Li, Guanhai
Adobe PDF(6984Kb)
|
收藏
|
浏览/下载:476/1
|
提交时间:2023/07/28
Aspect ratio
Chlorine compounds
Etching
Fabrication
III-V semiconductors
Inductively coupled plasma
Optimization
Photodetectors
Photons
Semiconducting indium
Semiconducting indium gallium arsenide
Semiconducting indium phosphide
Temperature
Deep etching
Etching process
High aspect ratio structure fabrication
High aspect ratio structures
Inductively coupled plasma deep etching
Inductively-coupled plasma
InP based
Lows-temperatures
MetaLens
Structure fabrication
Design and Simulation of Anti-reflecting Nanostructure for Visible Shortwave Infrared Focal Plane Array Detectors
会议论文
PROCEEDINGS OF SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, Nantong, China, September 17, 2022 - September 19, 2022
作者:
Yu, Xiaoyuan
;
Yu, Yizhen
;
Shao, Xiumei
;
Tian, Yu
;
Yu, Chunlei
Adobe PDF(1912Kb)
|
收藏
|
浏览/下载:261/0
|
提交时间:2023/06/02
Focal plane arrays
Focusing
Infrared detectors
Infrared radiation
Nanostructures
Photons
Quantum efficiency
Semiconducting indium
Anti-reflecting
Focal-plane arrays
Infrared photodetector
Ingaas/InP focal plane array
Mie's scattering
Nanostructure parameter design
Parameter designs
Short wave infrared
Sub-wavelength
Sub-wavelength nanostructure
Visible-shortwave infrared photodetector
Growth and characterization of InAs/InP0.69Sb0.31 superlattice by MOCVD
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2022, 卷号: 595
作者:
Li, Meng
;
Zhu, Hong
;
Zhu, He
;
Liu, Jiafeng
;
Huai, Yunlong
Adobe PDF(4829Kb)
|
收藏
|
浏览/下载:355/0
|
提交时间:2022/09/02
Atomic force microscopy
Chemical detection
Indium arsenide
Infrared radiation
Metallorganic chemical vapor deposition
Morphology
Photoluminescence
Surface morphology
Transmission electron microscopy
A1.
A3.
Antimonides
B1.
InAs/InP
Metal-organic chemical vapour depositions
Scanning transmission electron microscopes
Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy
期刊论文
JOURNAL OF LUMINESCENCE, 2022, 卷号: 249
作者:
Yu, Jiajun
;
Zhao, Yinan
;
Li, Siqi
;
Yao, Jinshan
;
Yao, Lu
Adobe PDF(1019Kb)
|
收藏
|
浏览/下载:297/1
|
提交时间:2022/06/17
Aluminum alloys
III-V semiconductors
Indium phosphide
Molecular beam epitaxy
Optoelectronic devices
Photoluminescence spectroscopy
Semiconducting indium phosphide
Temperature
Carrier localization effects
In composition engineering
In compositions
Inala random alloy
InP substrates
Localized state
Low temperature photoluminescence
Molecular-beam epitaxy
Random alloy
Spectral structure
首页
上一页
1
2
下一页
末页