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	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：69/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99 作者: Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu Adobe PDF(1674Kb) \| 收藏 \| 浏览/下载：74/4 \| 提交时间：2025/02/12 Distributed feedback lasers Gates (transistor) High electron mobility transistors Junction gate field effect transistors Leakage currents Monolithic microwave integrated circuits Noise figure Enhancement-mode Gallium nitride High electron-mobility transistors Low noiseamplifier Low-noise amplifier Metala sem-iconductor high-electron-mobility transistor (MOSHEMT) MOSHEMT MOSHEMTs Neutral beam etching
	Large Nernst effect in a layered metallic antiferromagnet EuAl₂Si₂ 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 17 作者: Yang, Kunya; Xia, Wei; Mi, Xinrun Adobe PDF(3262Kb) \| 收藏 \| 浏览/下载：1182/61 \| 提交时间：2024/11/04 Aluminum compounds Antiferromagnetism Europium alloys Europium compounds Fermi level Gallium compounds Thermoelectric refrigeration Thermoelectricity Antiferromagnets Electrons and holes High mobility Metallics Nernst effect Nernst signal Seebeck Single components Thermoelectric devices Thermoelectric generators
	Trapping mechanism transition of Î³-ray irradiation on p-GaN gate stack on gate applying voltage swing 期刊论文 APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13 作者: Zhu, Junyan; Ding, Jihong; Ouyang, Keqing; Zou, Xinbo; Ma, Hongping Adobe PDF(2565Kb) \| 收藏 \| 浏览/下载：257/1 \| 提交时间：2024/10/08 Aluminum gallium nitride Electron traps Gamma rays Gates (transistor) High electron mobility transistors Irradiation Junction gate field effect transistors Threshold voltage 'current AlGaN Gate stacks Mg-doping Total ionizing dose effects Trap density Trap state Trapping mechanisms Voltage swings Voltage-controlled
	Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer 期刊论文 HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175 作者: Wang, Kaichu; Ding, Qingfeng; Zhou, Qi; Cai, Xinhang; Zhang, Jinfeng 收藏 \| 浏览/下载：249/0 \| 提交时间：2024/09/20 Aluminum gallium nitride Beam forming networks Channel estimation Chemical lasers Computer testing Direction of arrival Distributed feedback lasers Dye lasers Frequency estimation Gallium nitride Heterodyne detection Heterodyning Heterojunctions High electron mobility transistors Hydrogen masers Laser accessories Laser theory Liquid lasers Radiometers Temperature sensors Terahertz wave detectors Tetrodes Time difference of arrival AlGaN/GaN high electron mobility transistors Arrayed detector Coherent detection Directionof-arrival (DOA) Estimation of direction of arrival terahertz wave Field of views Heterodyne (coherent) detection Linear-array Tera Hertz Vector detection
	Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy 会议论文 2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024 作者: Ke Li; Yi Ma; Xinbo Zou JPEG(176Kb) \| 收藏 \| 浏览/下载：156/0 \| 提交时间：2024/09/19 High electron mobility transistors III-V semiconductors Junction gate field effect transistors Masers Power amplifiers Power HEMT System-on-chip AM-AM distortion AM-PM Compensation strategy Gain compression GaN power amplifier Output power Power Power amplifier Soft gain compression Transistor architecture
	Strain-tuned full spin polarization and ndoping of phosphorene via the phosphorene/Co3Sn3S2 heterojunction 期刊论文 COMPUTATIONAL MATERIALS SCIENCE, 2024, 卷号: 233 作者: Yang, Yao; Wang, Xiaofang; Xie, Yiqun; Hu, Yibin; Chen, Xiaoshuang Adobe PDF(2394Kb) \| 收藏 \| 浏览/下载：360/0 \| 提交时间：2023/12/22 Energy gap Heterojunctions Schottky barrier diodes Semiconductor doping Spin polarization Tin compounds Van der Waals forces Electronic.structure First principle method Half metals High carrier mobility N-Doping Phosphorene Schottky barriers Spin channels Spin-orbit couplings Spin-polarization
	IP Tunneling Based for Mobility Management in LEO Constellation Networks 会议论文 COMMUNICATIONS IN COMPUTER AND INFORMATION SCIENCE, Wuhan, China, October 12, 2023 - October 13, 2023 作者: Wang, Wenqian; Tian, Feng; Ren, Chaoyu; Ding, Zhaolong; Yang, Zijian Adobe PDF(17601Kb) \| 收藏 \| 浏览/下载：212/0 \| 提交时间：2024/05/11 Internet protocols Orbits Routers Satellite ground stations Satellite links Satellites Access network Constellation networks High-throughput IP tunneling LEO Constellation LEO satellite networks Mobility management Relative mobility Strong robustness User terminals
	Reconfiguring the Optical Selection Rule in Ultramicrotome-Crafted Vertically Aligned InSe Ribbons 期刊论文 ADVANCED OPTICAL MATERIALS, 2024, 卷号: 12, 期号: 23 作者: Hu, Xin; Li, Zi-Han; Li, Zhen-Hui; Fu, Jie-Rui; Wang, Han Adobe PDF(3749Kb) \| 收藏 \| 浏览/下载：190/2 \| 提交时间：2024/05/24 Crystal orientation Electric fields Harmonic generation Indium compounds Light absorption Nonlinear optics Photoluminescence Selenium compounds Temperature Emission dipole High carrier mobility Indium selenide Light-matter interactions Optical path Optical sections Optical selection rules Optoelectronic applications Ultramicrotome Vertically aligned
	Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: PP, 期号: 99, 页码: 1-1 作者: Adobe PDF(1470Kb) \| 收藏 \| 浏览/下载：297/0 \| 提交时间：2024/06/11 Activation energy Deep level transient spectroscopy Dielectric materials Drain current Electric fields Gallium nitride High electron mobility transistors III-V semiconductors MOSFET devices Stability Threshold voltage Current collapse Dynamic reliability assessment Dynamics characteristic Dynamics stability MOS-FET MOSFETs Reference devices Time resolved measurement Trench MOSFET Vertical trench MOSFET

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