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	High-Speed InGaP/AlGaAs Avalanche Photodiodes for LED-Based Visible Light Communication 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 6, 页码: 3023-3028 作者: Yifan Fan; Xiangyang Chen; Zhecheng Dai; Jingyi Wang; Daqi Shen Adobe PDF(6221Kb) \| 收藏 \| 浏览/下载：54/3 \| 提交时间：2025/04/28 Aluminum gallium nitride Avalanche diodes Avalanche photodiodes Gallium alloys Gallium nitride Gallium phosphide Indium phosphide Laser beams Light emitting diodes Optical communication Semiconducting indium phosphide 3 dB bandwidth Aluminum composition Avalanche photodiode High Speed Light detection Lightemitting diode Micro light-emitting diode Multiplication gain Visible light Visible-light communication
	Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文 POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11 作者: Yitai zhu; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang 浏览 \| Microsoft Word(2182Kb) \| 收藏 \| 浏览/下载：99/1 \| 提交时间：2025/03/07 Aluminum gallium nitride Deep level transient spectroscopy Gates (transistor) High electron mobility transistors Indium phosphide Junction gate field effect transistors MOS devices MOSFET devices Semiconducting aluminum compounds Semiconducting gallium compounds Semiconducting indium phosphide Surface discharges Threshold voltage AlGaN Dynamic performance Dynamics characteristic Enhancement mode GaN metal oxide semiconductor high electron mobility transistor Interface traps Metal-oxide-semiconductor high-electron mobility transistors Neutral beam etching Normally off Recessed gate
	Pressure-regulated bandgap narrowing and photoelectric activity enhancement in layered halide compound GeI2 期刊论文 JOURNAL OF APPLIED PHYSICS, 2025, 卷号: 137, 期号: 8 作者: Li, Zhongyang; Wang, Yiming Adobe PDF(3663Kb) \| 收藏 \| 浏览/下载：377/6 \| 提交时间：2025/03/14 Carrier concentration - Gallium compounds - Germanium alloys - Germanium oxides - Heterojunctions - Luminescent devices - Photodetectors - Photoelectricity - Semiconducting indium phosphide - Van der Waals forces - Wide band gap semiconductors Activity enhancement - Band gap narrowing - Halide compounds - Heterojunction devices - Light-matter interactions - Photoelectrics - Spectral response - Van Der Waals interactions - Weak interlayers - Wide-band-gap
	Silicon-integrated scandium-doped aluminum nitride electro-optic modulator 期刊论文 PHOTONICS RESEARCH, 2025, 卷号: 13, 期号: 2, 页码: 477-487 作者: Xu, Tianqi; Liu, Yushuai; Pu, Yuanmao; Yang, Yongxiang; Zhong, Qize Adobe PDF(1147Kb) \| 收藏 \| 浏览/下载：417/6 \| 提交时间：2024/06/24 Aluminum gallium nitride - Amplitude shift keying - CMOS integrated circuits - Digital filters - Electrooptical devices - Fiber optic sensors - Frequency shift keying - Indium phosphide - Light modulation - Light modulators - Notch filters - Phase shift keying - Photonic integrated circuits - Photonic integration technology - Ring lasers - Scandium compounds - Semiconducting aluminum compounds - Semiconducting indium phosphide - Signal modulation - Silicon nitride Electro-optic modulators - Electro-optics - Fabrication and characterizations - Functional devices - Hexagonal wurtzite structure - Nonlinear properties - Photonic circuits - Piezoelectric property - Seamless integration - Second orders
	Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures 期刊论文 APPLIED PHYSICS LETTERS, 2025, 卷号: 126, 期号: 1 作者: Zhi, Zhenghang; Wu, Yuyang; Ruan, Hanzhi; Liu, Jiuming; Huang, Puyang Adobe PDF(2896Kb) \| 收藏 \| 浏览/下载：134/12 \| 提交时间：2025/02/12 Cadmium alloys Cadmium telluride Gallium phosphide Heterodyning Heterojunctions Indium phosphide Narrow band gap semiconductors Selenium compounds Semiconducting aluminum compounds Semiconducting antimony compounds Semiconducting cadmium compounds Semiconducting gallium compounds Semiconducting indium phosphide Semiconductor quantum wells Silicon compounds Spin orbit coupling Spintronics Band bendings CdTe Molecular-beam epitaxy Quantum confinement effects Quantum-well heterostructure Rashba spin-orbit coupling Rashba-type spin-orbit Spin-orbit couplings Tunables Two-dimensional
	The impact of P-type doping level and profile on performance of InAs quantum dot lasers 期刊论文 JOURNAL OF APPLIED PHYSICS, 2024, 卷号: 136, 期号: 22 作者: Liu, Ruo-Tao; Du, An-Tian; Cao, Chun-Fang; Yang, Jin; Wu, Jian-Chu Adobe PDF(3215Kb) \| 收藏 \| 浏览/下载：253/4 \| 提交时间：2024/12/23 Aluminum arsenide Continuous wave lasers Gallium arsenide Gallium phosphide Indium antimonides Indium arsenide Indium phosphide Nanocrystals Photonic integrated circuits Photonic integration technology Q switched lasers Quantum dot lasers Semiconducting indium phosphide Semiconductor doping Semiconductor quantum dots System-on-chip Threshold current density Device performance Doping levels Doping profiles InAs quantum dots Output power P-type doping Performance Quantum-dot lasers Slope efficiencies Threshold-current density
	p-Type AgAuSe Quantum Dots 期刊论文 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2024, 卷号: 146, 期号: 46, 页码: 31799-31806 作者: Tang, Zhiyong; Wang, Zhixuan; Yang, Hongchao; Ma, Zhiwei; Zhang, Yejun Adobe PDF(7159Kb) \| 收藏 \| 浏览/下载：193/2 \| 提交时间：2024/11/28 Aluminum arsenide Atomic emission spectroscopy Gallium compounds Heterojunctions Mercury amalgams Nanocrystals Semiconducting indium phosphide Semiconductor doping Ultraviolet photoelectron spectroscopy X ray photoelectron spectroscopy Device application Doping strategies First principle calculations Level shift Metal free Optoelectronics devices P-type P/n homojunctions Toxic heavy metals X-ray photoelectrons
	Correlation between MBE deoxidation conditions and InGaAs/InP APD performance 期刊论文 HONGWAI YU HAOMIBO XUEBAO/JOURNAL OF INFRARED AND MILLIMETER WAVES, 2024, 卷号: 43, 期号: 1, 页码: 63-69 作者: Adobe PDF(6878Kb) \| 收藏 \| 浏览/下载：294/3 \| 提交时间：2024/02/23 Carrier concentration Heterojunctions III-V semiconductors Indium phosphide Infrared devices Molecular beams Optoelectronic devices Point defects Semiconducting indium Semiconducting indium gallium arsenide Semiconducting indium phosphide Semiconductor alloys Semiconductor quantum dots Substrates Condition Deoxidation Hetero-interfaces Heterointerface diffusion High sensitivity InGaAs/InP avalanche photodiodes InP substrates Molecular-beam epitaxy P/as exchange Performance
	The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 卷号: 166 作者: Zhu, Yicheng; Wang, Wenjuan; Zhou, Min; Qu, Huidan; Li, Guanhai Adobe PDF(6984Kb) \| 收藏 \| 浏览/下载：492/1 \| 提交时间：2023/07/28 Aspect ratio Chlorine compounds Etching Fabrication III-V semiconductors Inductively coupled plasma Optimization Photodetectors Photons Semiconducting indium Semiconducting indium gallium arsenide Semiconducting indium phosphide Temperature Deep etching Etching process High aspect ratio structure fabrication High aspect ratio structures Inductively coupled plasma deep etching Inductively-coupled plasma InP based Lows-temperatures MetaLens Structure fabrication
	Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces 期刊论文 SCIENCE CHINA INFORMATION SCIENCES, 2022, 卷号: 65, 期号: 8 作者: Jin, Tingting; Lin, Jiajie; You, Tiangui; Zhang, Xiaolei; Liang, Hao Adobe PDF(2696Kb) \| 收藏 \| 浏览/下载：118/0 \| 提交时间：2022/07/25 Chemical mechanical polishing Etching Gallium compounds III-V semiconductors Infrared devices Integration Molecular beam epitaxy Optoelectronic devices Semiconducting indium phosphide Silicon Substrates Chemical etching Gasb/si Heterogeneous integration InP/si Ion slicing Ion-slicing technique Molecular-beam epitaxy Sacrificial layer Selective chemical etching Si substrates

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