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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
Microsoft Word(2182Kb)
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浏览/下载:97/1
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提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
Carbon Nanotube 3D Integrated Circuits: From Design to Applications
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2025
作者:
Liu, Han-Yang
;
Sun, Yun
;
Sun, Dong-Ming
;
Cheng, Hui-Ming
Adobe PDF(5007Kb)
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浏览/下载:40/3
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提交时间:2025/04/07
carbon nanotube
chiplet technology
field-effect transistor
integrated circuit
monolithic 3D integration
1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: 72, 期号: 3, 页码: 1035-1040
作者:
Wenbo Ye
;
Junmin Zhou
;
Han Gao
;
Haowen Guo
;
Yitian Gu
Adobe PDF(1674Kb)
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浏览/下载:83/4
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提交时间:2025/02/12
Distributed feedback lasers
Gates (transistor)
High electron mobility transistors
Junction gate field effect transistors
Leakage currents
Monolithic microwave integrated circuits
Noise figure
Enhancement-mode
Gallium nitride
High electron-mobility transistors
Low noiseamplifier
Low-noise amplifier
Metala sem-iconductor high-electron-mobility transistor (MOSHEMT)
MOSHEMT
MOSHEMTs
Neutral beam etching
Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swing
期刊论文
APPLIED PHYSICS LETTERS, 2024, 卷号: 125, 期号: 13
作者:
Zhu, Junyan
;
Ding, Jihong
;
Ouyang, Keqing
;
Zou, Xinbo
;
Ma, Hongping
Adobe PDF(2565Kb)
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浏览/下载:283/2
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提交时间:2024/10/08
Aluminum gallium nitride
Electron traps
Gamma rays
Gates (transistor)
High electron mobility transistors
Irradiation
Junction gate field effect transistors
Threshold voltage
'current
AlGaN
Gate stacks
Mg-doping
Total ionizing dose effects
Trap density
Trap state
Trapping mechanisms
Voltage swings
Voltage-controlled
Gate-Switchable Molecular Diffusion on a Graphene Field-Effect Transistor
期刊论文
ACS NANO, 2024, 卷号: 18, 期号: 35, 页码: 24262-24268
作者:
Liou, Franklin
;
Tsai, Hsin-Zon
;
Goodwin, Zachary A. H.
;
Yang, Yiming
;
Aikawa, Andrew S.
Adobe PDF(4071Kb)
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浏览/下载:283/3
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提交时间:2024/08/26
surface diffusion
diffusion barrier
molecularelectronics
graphene field-effect transistor
scanningtunneling microscopy
Surface heterojunction based on n-type low-dimensional perovskite film for highly efficient perovskite tandem solar cells
期刊论文
NATIONAL SCIENCE REVIEW, 2024, 卷号: 11, 期号: 5
作者:
Jiang, Xianyuan
;
Zhou, Qilin
;
Lu, Yue
;
Liang, Hao
;
Li, Wenzhuo
Adobe PDF(4855Kb)
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浏览/下载:577/132
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提交时间:2024/04/26
Efficiency
Energy gap
Extraction
Field effect transistors
Heterojunctions
Metal halides
Molecules
Open circuit voltage
Optoelectronic devices
Perovskite solar cells
Semiconductor doping
Wide band gap semiconductors
Carrier extraction
Field-effect transistor
Halide perovskites
High quality
Low dimensional
Optoelectronics devices
Perovskite films
Surface layers
Tandem solar cells
Wide-band-gap
Linearity-Enhanced GaN Power Amplifier with Dual-Transistor Compensation Strategy
会议论文
2024 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM (IWS), Beijing, China, 16-19 May 2024
作者:
Ke Li
;
Yi Ma
;
Xinbo Zou
JPEG(176Kb)
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浏览/下载:163/0
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提交时间:2024/09/19
High electron mobility transistors
III-V semiconductors
Junction gate field effect transistors
Masers
Power amplifiers
Power HEMT
System-on-chip
AM-AM distortion
AM-PM
Compensation strategy
Gain compression
GaN power amplifier
Output power
Power
Power amplifier
Soft gain compression
Transistor architecture
A room-temperature, low-impedance and high-IF-bandwidth terahertz heterodyne detector based on bowtie-antenna-coupled AlGaN/GaN HEMT
期刊论文
APPLIED PHYSICS EXPRESS, 2023, 卷号: 16, 期号: 2
作者:
Ding, Qingfeng
;
Zhu, Yifan
;
Xiang, Lanyong
;
Zhang, Jinfeng
;
Li, Xinxing
Adobe PDF(1042Kb)
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浏览/下载:366/0
|
提交时间:2023/03/10
Aluminum gallium nitride
Antenna arrays
Bandwidth
Electric impedance
Gallium nitride
Heterodyning
High electron mobility transistors
III-V semiconductors
Lens antennas
Low noise amplifiers
Room temperature
AlGaN/GaN high electron mobility transistors
Antenna-coupled
Bow-tie antennas
Field-effect transistor
Heterodyne
Heterodyne detectors
Intermediate frequency bandwidth
Low impedance
Low-high
Tera Hertz
Enhancing UV-C Photoelectron Lifetimes for Avalanche-like Photocurrents in Carbon-Doped Bi3O4Cl Nanosheets
期刊论文
ACS APPLIED MATERIALS AND INTERFACES, 2023, 卷号: 15, 期号: 27, 页码: 32525-32537
作者:
Fu, Minghui
;
Dou, Hongbin
;
Zhai, Wenbo
;
Hou, Bingsen
;
Wu, Congcong
Adobe PDF(13555Kb)
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浏览/下载:530/4
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提交时间:2023/07/28
Absorption spectroscopy
Bismuth compounds
Carbon
Chlorine compounds
Field effect transistors
Nanosheets
Optical pumping
Photocurrents
Photoelectrons
Photons
Avalanche photocurrent
Carbon doping
Electron-hole recombination
Field-effect transistor
Gas-phases
Photoelectron lifetime
Synthesised
Transient absorption spectroscopies
Two-dimensional
UV-C photodetector
Natural p-n Junctions at the MoS2 Flake Edges
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2022
作者:
Wang, Kang
;
Taniguchi, Takashi
;
Watanabe, Kenji
;
Xue, Jiamin
Adobe PDF(3670Kb)
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浏览/下载:313/0
|
提交时间:2022/09/05
field effects transistor
edge states
p-n junction
contact-mode scanning tunneling spectroscopy
band profile
photovoltaic effect
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