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Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT
期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者:
Yitai zhu
;
Haitao Du
;
Yu Zhang
;
Haolan Qu
;
Haodong Jiang
Microsoft Word(2182Kb)
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收藏
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浏览/下载:66/1
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提交时间:2025/03/07
Aluminum gallium nitride
Deep level transient spectroscopy
Gates (transistor)
High electron mobility transistors
Indium phosphide
Junction gate field effect transistors
MOS devices
MOSFET devices
Semiconducting aluminum compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Surface discharges
Threshold voltage
AlGaN
Dynamic performance
Dynamics characteristic
Enhancement mode
GaN metal oxide semiconductor high electron mobility transistor
Interface traps
Metal-oxide-semiconductor high-electron mobility transistors
Neutral beam etching
Normally off
Recessed gate
Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer
期刊论文
HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2024, 卷号: 53, 期号: 6, 页码: 166-175
作者:
Wang, Kaichu
;
Ding, Qingfeng
;
Zhou, Qi
;
Cai, Xinhang
;
Zhang, Jinfeng
收藏
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浏览/下载:244/0
|
提交时间:2024/09/20
Aluminum gallium nitride
Beam forming networks
Channel estimation
Chemical lasers
Computer testing
Direction of arrival
Distributed feedback lasers
Dye lasers
Frequency estimation
Gallium nitride
Heterodyne detection
Heterodyning
Heterojunctions
High electron mobility transistors
Hydrogen masers
Laser accessories
Laser theory
Liquid lasers
Radiometers
Temperature sensors
Terahertz wave detectors
Tetrodes
Time difference of arrival
AlGaN/GaN high electron mobility transistors
Arrayed detector
Coherent detection
Directionof-arrival (DOA)
Estimation of direction of arrival terahertz wave
Field of views
Heterodyne (coherent) detection
Linear-array
Tera Hertz
Vector detection
0.2-4.0 THz broadband terahertz detector based on antenna-coupled AlGaN/GaN HEMTs arrayed in a bow-tie pattern
期刊论文
OPTICS EXPRESS, 2023, 卷号: 31, 期号: 6, 页码: 10720-10731
作者:
Zhu, Yifan
;
Ding, Qingfeng
;
Xiang, Lanyong
;
Zhang, Jinfeng
;
Li, Xinxing
Adobe PDF(6444Kb)
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浏览/下载:352/0
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提交时间:2023/04/07
Aluminum gallium nitride
Antenna arrays
Directional patterns (antenna)
Electric resistance
Fourier transform infrared spectroscopy
Gallium nitride
III-V semiconductors
Lens antennas
Terahertz waves
AlGaN/GaN high electron mobility transistors
Antenna-coupled
Bow tie
Broadband terahertz
Centre frequency
Gated channels
High sensitivity
Noise equivalent power
Response spectra
Terahertz detectors
A room-temperature, low-impedance and high-IF-bandwidth terahertz heterodyne detector based on bowtie-antenna-coupled AlGaN/GaN HEMT
期刊论文
APPLIED PHYSICS EXPRESS, 2023, 卷号: 16, 期号: 2
作者:
Ding, Qingfeng
;
Zhu, Yifan
;
Xiang, Lanyong
;
Zhang, Jinfeng
;
Li, Xinxing
Adobe PDF(1042Kb)
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浏览/下载:349/0
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提交时间:2023/03/10
Aluminum gallium nitride
Antenna arrays
Bandwidth
Electric impedance
Gallium nitride
Heterodyning
High electron mobility transistors
III-V semiconductors
Lens antennas
Low noise amplifiers
Room temperature
AlGaN/GaN high electron mobility transistors
Antenna-coupled
Bow-tie antennas
Field-effect transistor
Heterodyne
Heterodyne detectors
Intermediate frequency bandwidth
Low impedance
Low-high
Tera Hertz
Terahertz vector measurement system based on AlGaN/GaN HEMT terahertz mixer
期刊论文
HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2023, 卷号: 52, 期号: 1
作者:
Liu, Yiting
;
Ding, Qingfeng
;
Feng, Wei
;
Zhu, Yifan
;
Qin, Hua
Adobe PDF(2101Kb)
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浏览/下载:299/0
|
提交时间:2023/03/10
luminum gallium nitride
Gallium nitride
High electron mobility transistors
Lenses
Vectors
AlGaN/GaN high electron mobility transistors
Beam testing
Coherent detection
High electron-mobility transistors
Measurement system
Quasioptical systems
Tera Hertz
Terahertz detectors
Terahertz mixer
Vector measurements
Research on the characteristics of AlGaN/GaN HEMT terahertz detector array cooled by liquid nitrogen
期刊论文
HONGWAI YU JIGUANG GONGCHENG/INFRARED AND LASER ENGINEERING, 2022, 卷号: 51, 期号: 12
作者:
Wu, Hao
;
Zhu, Yifan
;
Ding, Qingfeng
;
Zhang, Jinfeng
;
Yang, Shangguan
Adobe PDF(1356Kb)
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收藏
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浏览/下载:288/0
|
提交时间:2023/03/10
Aluminum gallium nitride
Electron mobility
Focusing
Gallium nitride
III-V semiconductors
Liquefied gases
Pixels
Temperature
AlGaN/GaN high electron mobility transistors
Detector arrays
Focal Plane
Gallium nitride high-electron-mobility transistor
High electron-mobility transistors
Imaging chips
Low-temperature focal-plane
Lows-temperatures
Terahertz detectors
Working voltage
Terahertz direct polarization detector based on integrated antenna-coupled AlGaN/GaN high-electron-mobility transistors
期刊论文
OPTICS EXPRESS, 2022, 卷号: 30, 期号: 24, 页码: 42956-42966
作者:
Ding, Qingfeng
;
Zhu, Yifan
;
Xiang, Lanyong
;
Sun, Jiandong
;
Yang Shangguan
Adobe PDF(3129Kb)
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收藏
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浏览/下载:312/0
|
提交时间:2022/12/02
Aluminum gallium nitride
Electron mobility
Gallium nitride
High electron mobility transistors
III-V semiconductors
Terahertz waves
AlGaN/GaN high electron mobility transistors
Antenna-coupled
Detection system
Direct polarization
Integrated antennas
Polarisation informations
Polarization angle
Polarization detection
Tera Hertz
Terahertz applications
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